BUF420A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: ■ SWITCH MODE POWER SUPPLIES ■ MOTOR CONTROL DESCRIPTION The BUF420A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications. 3 2 1 TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CEV Collector-Emitter Voltage (V BE = -1.5V) 1000 V V CEO Collector-Emitter Voltage (I B = 0) 450 V V EBO Emitter-Base Voltage (I C = 0) IC I CM 7 V Collector Current 30 A Collector Peak Current (tp < 5 ms) 60 A Base Current 6 A I BM Base Peak Current (t p < 5 ms) 9 A P t ot Total Dissipation at T c = 25 C IB T stg Tj June 2000 o St orage Temperature Max. Operating Junction Temperature 200 W -65 to 150 o C 150 o C 1/6 BUF420A THERMAL DATA R t hj-ca se Thermal Resistance Junction-Case Max o 0.63 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter V CE(sat )∗ V BE(s at)∗ di c /dt V CE (3µs) V CE (5µs) V CE = 1000 V V CE = 1000 V Tc = 100 o C Collector Cut-off Current (V BE = -1.5V) V CE = 1000 V V CE = 1000 V Tc = 100 C Emitter Cut-off Current (I C = 0) V BE = 5 V I C = 200 mA L = 25 mH Emitter Base Voltage (I C = 0) I E = 50 mA Collector-Emitter Saturation Voltage IC IC IC IC = = = = 10A 10 A 20 A 20 A IB IB IB IB = = = = 1 1 2 2 A A A A IC IC IC IC = = = = 10A 10 A 20 A 20 A IB IB IB IB = = = = 1 1 2 2 A A A A Base-Emitter Saturation Voltage Rate of rise on-state Collector Current Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage Max. Un it 0.2 1 mA mA 0.2 1 mA mA 1 mA 450 V 7 V 0.8 Tc =100 o C 2.8 0.5 T c =100 o C 2 0.9 o 1.5 Tc =100 C 1.1 o T c =100 C V CC = 300 V R C = 0 t p = 3 µs o T j =25 C I B1 = 1.5 A T j =100 o C I B1 = 1.5 A o Tj =100 C I B1 = 6 A 1.5 100 R C = 60 Ω T j =25 o C o T j =100 C 2.1 V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A R C = 60 Ω o T j =25 C o T j =100 C 1.1 I C = 10 A V BB = - 5 V V c la mp = 400 V L = 0.25 mH V CC = 50 V R BB = 0.6 Ω IB1 = 0.5 A ts tf tc INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime I C = 10 A V BB = - 5 V V c la mp = 400 V L = 0.25 mH V CC = 50 V R BB = 0.6 Ω IB1 = 1 A o Tj =100 C Maximum Collector Emitter Voltage without Snubber I C = 10 A V BB = - 5 V V c la mp = 400 V L = 0.25 mH V CC = 50 V R BB = 0.6 Ω IB1 = 1 A Tj =125 o C INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime I C = 10 A V BB = 0 V c la mp = 400 V L = 0.25 mH V CC = 50 V R BB = 0.15 Ω IB1 = 1 A V V V V 8 V V 4 V V µs µs µs 1 0.05 0.08 2 0.1 0.18 500 V V V V A/µs A/µs A/µs 70 150 V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime ts tf tc Typ . o ts tf tc V CEW 2/6 Min. Collector Cut-off Current (R BE = 5 Ω) V CEO(sus )∗ Collector-Emitter Sustaining Voltage (IB = 0) V EBO Test Cond ition s µs µs µs V 1.5 0.04 0.07 µs µs µs BUF420A ELECTRICAL CHARACTERISTICS (continued) Symb ol Parameter Test Cond ition s INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime I C = 10 A V BB = 0 V c la mp = 400 V L = 0.25 mH V CC = 50 V R BB = 0.15 Ω IB1 = 1 A o Tj =100 C Maximum Collector Emitter Voltage without Snubber I C = 10 A V BB = 0 V c la mp = 400 V L = 0.25 mH V CC = 50 V R BB = 0.15 Ω IB1 = 1 A Tj =125 o C ts tf tc INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime I C = 20 A V BB = -5 V V c la mp = 400 V L = 0.12 mH V CC = 50 V R BB =0.6 Ω IB1 = 4 A ts tf tc INDUCTIVE LOAD Storage Time Fall T ime Cross Over T ime I C = 20 A V BB = - 5 V V c la mp = 400 V L = 0.12 mH V CC = 50 V R BB = 0.6 Ω IB1 = 4 A Tj =125 o C Maximum Collector Emitter Voltage without Snubber I CW off = 30 A V BB = - 5 V L = 0.08 mH o T j =125 C V CC = 50 V R BB = 0.6 Ω IB1 = 6 A ts tf tc V CEW V CEW Min. Typ . Max. Un it 3 0.15 0.25 µs µs µs 500 V µs µs µs 2.2 0.06 0.12 3.5 0.12 0.3 400 µs µs µs V Turn-on Switching Test Circuit. 1) F ast electronic switch 2) Non-inductive Resistor Turn-off Switching Test Circuit. 1) F ast electronic switch 2) Non-inductive Resistor 3) F ast recovery rectifier 3/6 BUF420A Turn-on Switching Test Waveforms. Turn-off Switching Test Waveforms (inductive load). Forward Biased Safe Operating Areas. Reverse Biased Safe Operating Area Storage Time Versus Pulse Time. 4/6 BUF420A TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F ¯ R 1 2 3 P025A 5/6 BUF420A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6