BUL381 BUL382 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES ■ DESCRIPTION The BUL381 and BUL382 manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. They use a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V V CES Collector-Emitter Voltage (V BE = 0) 800 V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 5 A Collector Peak Current (tp < 5 ms) 8 A IC I CM Base Current 2 A I BM Base Peak Current (t p < 5 ms) 4 A P t ot Total Dissipation at T c = 25 o C 70 IB T stg Tj June 1998 St orage Temperature Max. Operating Junction Temperature W -65 to 150 o C 150 o C 1/7 BUL381 / BUL382 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.78 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it 100 500 µA µA 250 µA I CES Collector Cut-off Current (V BE = 0) V CE = 800 V V CE = 800 V I CEO Collector Cut-off Current (IB = 0) V CE = 400 V Collector-Emitter Sustaining Voltage I C = 100 mA Emitter-Base Voltage (I C = 0) I E = 10 mA V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A IB = 0.2 A IB = 0.4 A IB = 0.8 A 0.5 0.7 1.1 V V V V BE(s at)∗ Base-Emitter Saturation Voltage IC = 1 A IC = 2 A IB = 0.2 A IB = 0.4 A 1.1 1.2 V V DC Current G ain IC = 2 A I C = 10 mA t ON ts tf RESISTIVE LO AD Turn-on T ime Storage Time Fall T ime V CC = 250 V IC = 2 A I B1 = 0.4 A IB2 = -0.4 A (for BUL381only) t p = 30 µs 1.4 1 2.2 800 µs µs ns t ON ts tf RESISTIVE LO AD Turn-on T ime Storage Time Fall T ime V CC = 250 V IC = 2 A I B1 = 0.4 A IB2 = -0.4 A (for BUL382 only) t p = 30 µs 1.7 1 2.5 800 µs µs ns ts tf INDUCTIVE LOAD Storage Time Fall T ime I C = 2 A VCL = 250 V I B1 = 0.4 A IB2 = -0.8 A L = 200 µH 1.7 75 2.6 120 µs ns ts tf INDUCTIVE LOAD Storage Time Fall T ime I C = 2 A VCL = 250 V I B1 = 0.4 A IB2 = -0.8 A L = 200 µH T j = 125 oC 2.6 150 V CEO(sus) V EBO h FE∗ ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 Tj = 125 oC L = 25 mH V CE = 5 V V CE = 5 V 400 V 9 V 8 10 µs ns BUL381 / BUL382 Safe Operating Areas Derating Curves DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BUL381 / BUL382 Reverse Biased SOA Inductive Fall Time Inductive Storage Time Inductive Fall Time Inductive Storage Time Resistive Load Switching Test Ciurcuit 1) Fast electronic switch 2) Non-inductive Resistor 4/7 BUL381 / BUL382 Reverse BSOA and Inductive Load Switching Test Ciurcuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery Rectifier 5/7 BUL381 / BUL382 TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 6/7 BUL381 / BUL382 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 7/7