BUL742 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA APPLICATIONS ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES 3 ■ DESCRIPTION The BUL742 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintening the wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V BE = 0) 900 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0, I B = 0.75 A, t p < 10µs, T j < 150 o C) BV EBO V 4 A IC I CM IB Collector Current Collector Peak Current (t p <5 ms) 8 A Base Current 2 A 4 A I BM Base Peak Current (t p <5 ms) P tot o T stg Tj June 2001 Total Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature 70 W -65 to 150 o C 150 o C 1/5 BUL742 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.78 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES Parameter Collector Cut-off Current (V BE = 0) V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Test Conditions Min. Typ. V CE = 900 V I C = 100 mA L = 25 mH Max. Unit 100 µA 400 V 12 V BV EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 1 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 4 A I B = 0.2 A I B = 0.4 A I B = 0.8 A 0.5 1.0 1.5 V V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A I B = 0.4 A 1.5 V DC Current Gain I C = 250 mA IC = 2 A V CE = 5 V V CE = 5 V ts tf RESISTIVE LOAD Storage Time Fall Time V CC = 125 V I B1 = 45 mA t p = 300 µs I C = 0.5 A I B2 = -45 mA E sb Avalanche Energy L = 2 mH h FE ∗ ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Energy Rating Test Circuit 2/5 35 10 70 35 11 250 6 µs ns mJ BUL742 Safe Operating Areas Derating Curve Reverse Biased SOA 3/5 BUL742 TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 4/5 BUL742 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5