HCC/HCF4066B QUAD BILATERAL SWITCH FOR TRANSMISSION OR MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS . . . . . . . . . . . . .. .. 15V DIGITAL OR ± 7.5V PEAK-TO-PEAK SWITCHING 80Ω TYPICAL ON RESISTANCE FOR 15V OPERATION SWITCH ON RESISTANCE MATCHED TO WITHIN 5Ω OVER 15V SIGNAL-INPUT RANGE ON RESISTANCE FLAT OVER FULL PEAKTO-PEAK SIGNAL RANGE HIGH ON/OFF OUTPUT-VOLTAGE RATIO : 65dB TYP. @ fis = 10kHz, RL = 10kΩ HIGH DEGREE OF LINEARITY : < 0.5% DISTORTION TYP. @ fis = 1kHz, Vis = 5 Vp-p, VDD – VSS ≥ 10V, RL = 10kΩ EXTREMELY LOW OFF SWITCH LEAKAGE RESULTING IN VERY LOW OFFSET CURRENT AND HIGH EFFECTIVE OFF RESISTANCE ; 10pA TYP. @ VDD – VSS = 10V, TA = 25°C EXTREMELY HIGH CONTROL INPUT IMPEDANCE (control circuit isolated from signal circuit) : 1012 Ω TYP. LOW CROSSTALK BETWEEN SWITCHES : – 50dB TYP. @ fis = 0.9MHz, R L = 1kΩ MATCHED CONTROL-INPUT TO SIGNALOUTPUT CAPACITANCE : REDUCES OUTPUT SIGNAL TRANSIENTS FREQUENCY RESPONSE, SWITCH ON = 40MHz (typ.) QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE 5V, 10V, AND 15V PARAMETRIC RATINGS INPUT CURRENT OF 100nA AT 18V AND 25°C FOR HCC DEVICE 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC TENTATIVE STANDARD No. 13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTION OF ”B” SERIES CMOS DEVICES” EY (Plastic Package) M1 (Micro Package) F (Ceramic Frit Seal Package) C1 (Plastic Chip Carrier) ORDER CODES : HCC4066BF HCF4066BM1 HCF4066BEY HCF4066BC1 PIN CONNECTIONS DESCRIPTION The HCC4066B (extended temperature range) and HCF4066B (intermediate temperature range) are monolithic integrated circuits, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF4066B is a quad bilateral switch intended for the transmission or multiplexing of analog or digital signals. It is pin-forJune 1989 1/11 HCC/HCF4066B pin compatible with HCC/HCF4016B, but exhibits a much lower ON resistance. In addition, the ON resistance is relatively constant over the full input-signal range. The HCC/HCF4066B consists of four independent bilateral switches. A single control signal is required per switch. Both the p and the n device in a given switch are biased ON or OFF simultaneously by the control signal. As shown in schematic diagram, the well of the n-channel device on each switch is either tied to the input when the switch is ON or to VSS when the switch is OFF. This configuration eliminates the variation of the switchtransistor threshold voltage with input signal, and thus keeps the ON resistance low over the full operating-signal range. The advantages over singlechannel switches include peak input signal voltage swings equal to the full supply voltage, and more constant ON impedance over the input-signal range. For sample-and-hold applications, however, the HCC/HCF4016B is recommended. SCHEMATIC DIAGRAM 1 OF 4 IDENTICAL SWITCHES AND ITS ASSOCIATED CONTROL CIRCUITRY. ABSOLUTE MAXIMUM RATINGS Symbol V DD* Parameter Supply Voltage : HC C Types H C F Types Vi Input Voltage II Value Unit – 0.5 to + 20 – 0.5 to + 18 V V – 0.5 to V DD + 0.5 V DC Input Current (any one input) ± 10 mA Pt ot Total Power Dissipation (per package) Dissipation per Output Transistor for T o p = Full Package-temperature Range 200 mW 100 mW Top Operating Temperature : HCC Types H CF Types – 55 to + 125 – 40 to + 85 °C °C Tstg Storage Temperature – 65 to + 150 °C Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to VSS pin voltage. 2/11 HCC/HCF4066B RECOMMENDED OPERATING CONDITIONS Symbol V DD VI Top Parameter Supply Voltage : HC C Types H C F Types Input Voltage Operating Temperature : H CC Types H C F Types Value Unit 3 to 18 3 to 15 V V 0 to V DD V – 55 to + 125 – 40 to + 85 °C °C ELECTRICAL CHARACTERISTICS (Tamb = 25°C, typical temperature coefficient for all VDD values is 0,3%/°C) Test Conditions Symbol IL Parameter Quiescent Device Current (all HCC Types switches ON or all switches OFF) HCF Types Value VI V DD (V) (V) 0/ 5 25 °C T Lo w* Min. T High* Max. Min. Typ. Max. Min. 5 0.25 0.01 0.25 0/10 10 0.5 0.01 0.5 15 0/15 15 1 0.01 1 30 0/20 20 5 0.02 5 150 0/ 5 5 1 0.01 1 7.5 0/10 10 2 0.01 2 15 0/15 15 4 0.01 4 30 5 800 470 1050 1300 10 310 180 400 550 15 200 125 240 320 5 850 470 1050 1200 10 330 180 400 500 15 210 125 240 300 Unit Max. 7.5 µA SIGNAL INPUTS (V is) and Outputs (V os ) RON On Resistance HCC Types HCF Types ∆ON TDH Resistance between any 2 Switches, ∆RON Total Harmonic Distorsion - 3 dB Cutoff Frequency (switch on) VC = V DD RL = 10KΩ Return VDD – V SS to ________ 2 Vis = V SS to V DD RL 10kΩ, VC = V DD 5 15 10 10 15 5 Ω Ω VC = VDD = 5V, VSS = – 5V, Vis (p-p) = 5V (sine wave centered in 0V) RL = 10kΩ, fis = 1kHz sine wave 0.4 % VC = V DD = 5V, VSS = – 5V, Vis (p-p) = 5V (sine wave centured on 0V) RL = 1kΩ 40 MHz * TLo w = – 55°C for HCC device : – 40°C for HCF device. * THigh = + 125°C for HCC device : + 85°C for HCF device. The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V. 3/11 HCC/HCF4066B ELECTRICAL CHARACTERISTICS (continued) Test Conditions Symbol tpd Va lu e V DD (V) Parameter TLow* Min. 2 5°C Max. Min. Typ. THigh* Unit Max. Min. Max. - 50 dB Feedthrough Frequency(switch off) VC = V SS = – 5 V, Vis (p-p) = 5V (sine wave centured on 0V) RL = 1 kΩ 1 MHz - 50 dB Crosstalk Frequency VC ( A) = VDD = + 5 V VC ( B) = VSS = – 5 V Vis (A) = 5Vp-p, 50Ω source RL = 1 kΩ 8 MHz Propagati on Delay RL = 200kΩ (signal input to VC = V DD, VSS = GND, CL = 5 0pF , V is = 1 0V signal output) (squa re wave centured on 5V) tr, tf = 20ns 5 20 40 10 10 20 15 7 15 Cis Input Capacitance VDD = + 5 V VC = V SS = – 5 V 8 Cos Output Capacitance 8 Cios Feedthrough Input/Output Leakage Current Switch OFF ns pF VC = 0V HCC Vis = 1 8 V ; V os Types = 0V Vis = 0 V ; V os = 18V VC = 0V HCF V = 1 5 V ; V os Types = is0V Vis = 0 V ; V os = 15V 0.5 ±10 –3 ± 0.1 ± 0.1 18 ± 1 µA ±10 –3 ± 0.3 ± 0.3 15 ± 1 CONTROL (V C) VILC VIHC IIH, IIL Control Input Low Iis < 1 0µA Voltage Vis = V SS, Vos = V DD and Vis = V DD, Vos = V SS Control Input High Voltage Input Leakage Current 5 1 1 1 10 2 2 2 15 2 2 2 5 3.5 3.5 10 7 7 7 15 11 11 11 V 3.5 V HCC Vis ≤ V DD Types VDD – V SS = 1 8 V 18 ± 0.1 ±10 –5 ± 0.1 ± 1 HCF VDD – V SS = 1 5 V Types VCC ≤ V DD – V SS 15 ± 0.3 ±10 –5 ± 0.3 ± 1 µA * TLo w = – 55°C for HCC device : – 40°C for HCF device. * THigh = + 125°C for HCC device : + 85°C for HCF device. The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V. 4/11 HCC/HCF4066B ELECTRICAL CHARACTERISTICS (continued) Test Conditions Symbol V DD (V) Parameter Crosstalk (control input to signal output) VC = 10V (sq. wave) tr, tf = 20ns RL = 10kΩ Turn-on VIN = V DD Propagation Delay tr, tf = 20ns CL = 50pF RL = 1k Ω Control Input Repetition Rate CI Val ue Vis = VDD,VSS = GND RL = 1k Ω to gnd CL = 50pF VC = 10V (square wave centured on 5V) tr, tf = 20ns Vos = 1/2V os @ 1kHz Input Capacitance Any Input 10 T Lo w* Min. Max. Min. 25 °C T High* Unit Typ. Max. Min. Max. 50 mV 5 35 70 10 20 40 15 15 30 5 6 10 9 15 9.5 5 ns MHz 7.5 pF * TLo w = – 55°C for HCC device : – 40°C for HCF device. * THigh = + 125°C for HCC device : + 85°C for HCF device. The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V. TYPICAL APPLICATIONS BIDIRECTIONAL SIGNAL TRANSMISSION VIA DIGITAL CONTROL LOGIC 5/11 HCC/HCF4066B TYPICAL APPLICATIONS (continued) 4-CHANNEL PAM MULTIPLEX SYSTEM DIAGRAM. 6/11 HCC/HCF4066B Plastic DIP14 MECHANICAL DATA mm DIM. MIN. a1 0.51 B 1.39 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L Z 3.3 1.27 0.130 2.54 0.050 0.100 P001A 7/11 HCC/HCF4066B Ceramic DIP14/1 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 20 0.787 B 7.0 0.276 D E 3.3 0.130 0.38 e3 0.015 15.24 0.600 F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060 L 0.22 0.31 0.009 0.012 M 1.52 2.54 0.060 0.100 N P Q 10.3 7.8 8.05 5.08 0.406 0.307 0.317 0.200 P053C 8/11 HCC/HCF4066B SO14 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.2 a2 MAX. 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45° (typ.) D 8.55 E 5.8 8.75 0.336 6.2 0.228 0.344 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 0.68 0.026 8° (max.) P013G 9/11 HCC/HCF4066B PLCC20 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 9.78 10.03 0.385 0.395 B 8.89 9.04 0.350 0.356 D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022 E 7.37 8.38 0.290 0.330 e 1.27 0.050 e3 5.08 0.200 F 0.38 0.015 G 0.101 0.004 M 1.27 0.050 M1 1.14 0.045 P027A 10/11 HCC/HCF4066B Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 11/11