STMICROELECTRONICS L9349DIE1

L9349
QUAD INTELLIGENT POWER LOW SIDE SWITCH
■
■
■
■
■
■
■
Quad power low side driver with 2 x 5A and
2 x 3A output current capability
Low RDSON typically 200mΩ and 300mΩ
@ Tj = 25°C
Internal output clamping structures with
VFB = 50V for fast inductive load current
recirculation
Limited output voltage slew rate for low EMI
Protected µP compatible enable and input
Wide operating supply voltage range 4.5V to 32V
Real time diagnostic functions:
– Output shorted to GND
PowerSO20
BARE DIE
ORDERING NUMBERS:
L9349
L9349DIE1
– Output shorted to VSS
■
– Open load detection in ON and OFF condition
DESCRIPTION
– Load bypass detection
The L9349 is a monolithic integrated quad low side
driver realized in an advanced MultipowerBCD mixed
technology. The device is intended to drive valves in
automotive environment.
– Overtemperature detection
Device protection functions:
– Overload disable
The inputs are µP compatible. Particular care has
been taken to protect the device against failures, to
avoid electromagnetic interferences and to offer extensive real time diagnostic.
– Selective thermal shutdown
■
Signal- and Power-Ground-loss shutdown
BLOCK DIAGRAM
IN1
D1
Channel 1
OUT1
EN
VS
52V
Output Control
OUT4
IN4
Overtemp
R
Q
S
Delay
Time
R IO
Overload
D4
Diagnostic
Control
Openload
Channel 4
IN2
D2
Channel 2
OUT2
IN3
D3
Channel 3
OUT3
00AT0025
September 2002
GND
1/12
L9349
PIN CONNECTION
Heat sink connected
to pins 1, 10, 11, 20
PGND
OUT1
D1
IN4
VS
NC
IN3
D2
OUT2
PGND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
00AT0026
PIN DESCRIPTION
N°
Pin
1
PGND
Power Ground
2
Out1
Output 1 (5A)
3
D1
Diagnostic 1
4
IN4
Input 4
5
VS
Supply Voltage
6
NC
Not Connected
7
IN3
Input 3
8
D2
Diagnostic 2
9
Out2
Output 2 (5A)
10
PGND
Power Ground
11
PGND
Power Ground
12
Out3
Output 3 (3A)
13
D3
Diagnostic 3
14
IN2
Input 2
15
GND
16
EN
Common Enable
17
IN1
Input 1
18
D4
Diagnostic 4
19
Out4
Output 4 (3A)
20
PGND
Power Ground
2/12
Function
Signal Ground
PGND
OUT4
D4
IN1
EN
GND
IN2
D3
OUT3
PGND
L9349
THERMAL DATA
Symbol
RTh j-case
Parameter
Thermal resistance junction to case
Value
Unit
3
°C/W
ABSOLUTE MAXIMUM RATINGSI
Symbol
Parameter
Conditions
Unit
VS
DC Supply Voltage
-0.3 to 32
V
VSP
Supply Voltage Pulse (duration <200ms)
-0.3 to 45
V
10
V/µs
dVS/dt
VIN, EN
VD
Supply Voltage Slope
Input Voltage
I10mA
-1.5 to 6
V
Diagnostic DC Output Voltage
I 50mA
-0.3 to 16
V
-0.3 to 45
V
VODC
DC Output Voltage
IO1, 2
DC Output Current Out 1, 2
5
A
IO3, 4
DC Output Current Out 3, 4
3
A
IOR1, 2
Reverse Output Current
-5
A
IOR3, 4
Reverse Output Current
-3
A
EO1, 2
Switch-off Energy for Inductive Loads
tEO = 250µs,1)
50
mJ
T = 5ms
30
mJ
Tj = -40 to 150°C
±0.3
V
Σt ≤ 30 min
175
°C
Σt ≤ 15 min
190
°C
EO3, 4
∆VGND
TjEO
1)
Value
GND Potential Difference
Junction Temperature During Switch-off
Tj
Junction Temperature
-40 to TjDIS
°C
Tstg
Storage Temperature
-55 to 150
°C
TjDIS
Thermal Disable Junction Temp. Threshold
ESD
Electrostatical Discharging
ESD
OUT1 - 4
180 to 210
°C
MIL883C
+-2
kV
vs. Common-GND
(PGNDs + GND)
+-4
kV
tEO is the clamping time (see Figure 1)
Electrical Characteristcs (Operating Range)
The electrical characteristics are valid within the below defined operating range, unless otherwise specified.
Symbol
1)
Parameter
Test Condition
Min.
Typ.
Max.
Unit
12
32
V
VS
Board Supply Voltage
4.5
Tj1
Junction Temperature
-40
150
°C
Tj2
Junction Temperature
150
TjDIS
°C
Σt ≤ 15min 1) over life time
Parameters guaranteed by correlation
3/12
L9349
ELECTRICAL CHARACTERISTICS
(VS = 4.5 to 32V; -40°C ≤ Tj1 ≤ 150°C < Tj2 ≤ TjDIS, unless other-wise specified.)
Values Tj2
Values Tj1
Symbol
Parameter
Test Conditions
Unit
Min.
Typ.
Max.
10
Min.
Max.
Supply
IVS OFF
DC Supply Current Off EN = 1.0V
5
IVS ON
DC Supply Current On VS ≤ 14V; VIN, VEN = 2V
8
mA
mA
Diagnostic Outputs D1 - D4
VDL
Diagnostic Output Low ID ≤ 3mA
Voltage
0.65
1.0
1.5
V
IDLE
Diagnostic Output
Leakage Current
VD = 14V 1)
0.1
2
20
µA
RDSON 1, 2 Output On Resistance
Tj = 25°C
Tj = 150°C
VS > 9.5V IO1,2 = 2A
200
300
500
mΩ
RDSON 3, 4
Tj = 25°C
Tj = 150°C
VS > 9.5V
IO3,4 = 1.3A
300
450
750
mΩ
V
Outputs Out 1 - Out 4
VZ
Z-diode clamping
voltage
IOCL ≥ 200mA
45
60
RO
Output pull down
resistor
VS > 9.5V
EN = 0V
10
40
Open Load Voltage
Threshold
VIN = 1V
VOUV 1-4
0.525 x
VS
VOUV hys 1- Hysteresis
∆VOUV 1-4,
Open Load Difference
Voltage Threshold
0.575 x
VS
0.003 x
VS
4
2-3, 4-1, 3-2
0.55 x
VS
VIN1,4/2,3 = 1V VS ≤ 16V
VOc Š 4.5V
VOC = output voltage of
other channel
VOC 1.0V
∆VOUV hys Open Load Hysteresis
VOC 1.25V
50
kΩ
V
V
VOC 1.5V
40
V
mV
1-4, 2-3,
4-1, 3-2
IOUC 1, 2, 3,
4
IOOC 1, 2
IOOC 3, 4
Open Load Current
Threshold
VEN=VIN=2V;
VS=6.5 - 16V
Over Load Current
Threshold
VS > 6.5V;
VOUT = 32V
TSD
Thermal Shut Down
TSD-hys
Thermal Shut Down
hysteresis
4/12
160
320
5
10
A
3
6
A
180
195
20
480
210
mA
°C
°C
L9349
ELECTRICAL CHARACTERISTICS (continued)
(VS = 4.5 to 32V; -40°C ≤ Tj1 ≤ 150°C < Tj2 ≤ TjDIS, unless other-wise specified.)
Values Tj2
Values Tj1
Symbol
Parameter
Test Conditions
Unit
Min.
IOUT-LE
OUT leakage current
Typ.
Max.
Min.
Max.
5
µA
-0.3
1
V
2.0
6
V
VOUT = 20V
VS = 0V
Inputs IN1-4, EN
VIN,EN L
Logic Input/Enable
Low Voltage
VIN,EN H
Logic Input/Enable
High Voltage
VEN,IN hys
IN, EN
Logic Input Hysteresis
IIN
Input Sink Current
IEN
Enable Sink Current
2V < VIN, VEN < 6V 2)
VIN, VEN < Vs
50
100
mV
10
20
40
µA
10
20
40
µA
4
25
µs
Timing
tON
Output Delay ON Time
IO = 1A
VS = 12V
3))
Fig. 2
tf,r
Output fall and rise
time
IO = 1A
VS = 12V
Fig. 2
3
10
30
µs
tOFF
Output Delay OFF
Time
IO = 1A
VS = 12V
5
15
30
µs
tDH-L, Diag
tD IOU
tDOL
tfilt
3)
Fig. 2
Diag. Delay Output
OFF Time
3)
Fig. 2
Diagnostic Open Load
Delay Time
9V< VS <16V, Fig 3
Diagnostic Overload
Delay Switch-OFF
Time
9V< VS <16V, Fig 3
Filter time
8
65
90
µs
50
µs
6
65
µs
4
24
µs
8
PGND
PGNDloss,h Power GND loss
threshold high
3
V
PGNDloss,l Power GND loss
threshold low
2
V
1)
2)
3)
The diagnostic output is short circuit protected up to VD = 16V
Open pins (EN, IN) are detected as low
VS = 9 to 16V ∧ IOUC ≤ IO ≤ IOOC
5/12
L9349
DIAGNOSTIC TABLE
Conditions
EN
IN
OUT
DIAG.
Normal Function
L
X
off
L
H
L
off
L
H
H
on
H
GND short
VOtyp < 0.55VS
L
X
off
H
Load bypass
∆VO1-4/2-3 ≥ 1.25V
H
L
off
H
Open Load
IO1,2,3,4typ < 320mA
H
H
on
L
X
X
off
L
H
H
off
L
Tjtyp ≥ 190°C Overtemperature
Over Load
IOmin 1,2 > 5A
IOmin 3,4 > 3A
SGND or PGND loss
channel off
X
L
off
H
SGND or PGND loss
channel on
H
H
off
L
CIRCUIT DESCRIPTION
The L9349 is a quad low side driver for inductive loads like valves in automotive environment. The internal pull
down current sources at the ENable and INput pins assure in case of open input conditions that the device is
switched off. An output voltage slope limitation for du/dt is implemented to reduce the EMI. An integrated active
flyback voltage limitation clamps the output voltage during the flyback phase to 50 V.
Each driver is protected against short circuit at V OUT < 32V and thermal overload. In short circuit condition the
output will be disabled after a short delay time tDOL. The thermal disable for TJ > 180°C of the output will be
reset if the junction temperature decreases about 20°C below the disable threshold temperature.
The overtemperature, overload and groundloss information is stored until IN is low.
For the real time error diagnosis the voltage and the current of the outputs are compared with internal fixed values VOUV for OFF and IOUC for ON conditions to recognize open load (R L ≥ 20KΩ, RL > 38Ω) in OFF and ON
conditions.
Also the output voltages V O1- 4 are compared to each other output in OFF condition with a fixed offset of ∆VOUV
to recognize load bypasses. The ∆VOUV diagnoses is suppressed during the flyback phases of the compared
output. The outputs 1 and 4 are compared for ∆VOUV and also outputs 2 and 3 are compared.
The diagnostic output level in connection with different ENable and INput conditions allows to recognize different fail states, like overtemp, short to VS, short to GND, bypass to GND and disconnected load (see diagnostic
table).
The diagnostic output is protected against short circuit. Exceeding the over load current threshold IOOC, the output current will be limited internally during the diagnostic overload delay switch-off time tDOL.
The device complies the I SO pulses imposed to the supply voltage of the valves without any failures of the functionality. Therefore some diagnostic functions are internal filtered. The following table shows the corresponding
filter time for each detected signal.
6/12
L9349
ON State
EN and IN =
HIGH
Overloading of output
(also shorted load to supply)
OFF State
EN or IN,
= LOW
X
Open load
(under voltage detection)
X
min. Filter
time
Reset done by
4µs
INx = “LOW”
-
Open load
(under current detection)
X
-
Overtemperature
X
4µs
INx = “LOW”
Power-Signal GND-loss
X
4µs
INx = “LOW”
Power- Signal-GND-loss
X
4µs
Openload difference
X
4µs
Figure 1. tEO Clamping Time
VO1-4
VOCL
VS
t
tEO
T
00AT0027
7/12
L9349
Figure 2. Output Slope (resistive load for testing)
VIN
VEN
5V
VH
VL
t
VOUT
tON
tOFF
VS
0.85V S
VOUV
0.15V S
t
VDIAG
tf
tr
tD H-L Diag
VD
0.5V D
00AT0030
Figure 3. Timing (tDOL, tDIOU)
IN
VON
IOOC
IOUC
VD
tfilt
tDIOU
00AT0032
8/12
Open Load Current
tDOL
L9349
Figure 4. Block Diagram - Open Load Voltage Detection
VBatt
L1 (L2)
OUT1
(OUT2)
L4 (L3)
OUT4
(OUT3)
IN1
IN4
RIO
RIO
VS
55%
±
+
+
±
Enable
R
Latch
Q
S
S
R
Latch
Q
00AT0033
VO UV1
VO UV4
9/12
L9349
Figure 5. Logic Diagram
VEN
VIN
VO U
IOO
IOU
Open Load Voltage
Normal
Operation OFF
Open Load Voltage
Open Load Current
Normal
Operation ON
Latch Reset
Latched
Over. Load
Diagnostic
Open Load Current
00AT0034
Normal
Operation ON
Open Load Current
VD
Figure 6. Application Circuit Diagram
+5V
VCC
I/O
IN1
I/O
D1
I/O
EN
OUT1
Channel 1
Z VALVE
KL15
VS
+45V
52V
IN4
Overtemp
+5V
R
Q
I/O
D4
µP
Controller
S
Delay
Time
Diagnostic
Control
+5V
KL30
OUT4
Output Control
I/O
Z VALVE
R IO
Overload
Openload
Channel 4
I/O
IN2
I/O
D2
Channel 2
OUT2
Z VALVE
+5V
GND
00AT0035
10/12
I/O
IN3
I/O
D3
Channel 3
OUT3
Z VALVE
GND
VBatt
L9349
DIM.
mm
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
3.6
0.1
0.142
0.3
a2
0.004
0.012
3.3
0.130
a3
0
0.1
0.000
0.004
b
0.4
0.53
0.016
0.021
c
0.23
0.32
0.009
0.013
D (1)
15.8
16
0.622
0.630
0.386
D1
9.4
9.8
0.370
E
13.9
14.5
0.547
e
1.27
e3
E1 (1)
0.570
0.450
11.1
E2
0.429
0.437
2.9
0.114
E3
5.8
6.2
0.228
0.244
G
0
0.1
0.000
0.004
H
15.5
15.9
0.610
h
L
0.626
1.1
0.8
JEDEC MO-166
0.043
1.1
N
Weight: 1.9gr
0.050
11.43
10.9
OUTLINE AND
MECHANICAL DATA
MAX.
0.031
0.043
8˚ (typ.)
S
8˚ (max.)
T
10
0.394
PowerSO20
(1) “D and E1” do not include mold flash or protusions.
- Mold flash or protusions shall not exceed 0.15mm (0.006”)
- Critical dimensions: “E”, “G” and “a3”.
N
R
N
a2
b
A
e
DETAIL A
c
a1
DETAIL B
E
e3
H
DETAIL A
lead
D
slug
a3
DETAIL B
20
11
0.35
Gage Plane
-C-
S
SEATING PLANE
L
G
E2
E1
BOTTOM VIEW
C
(COPLANARITY)
T
E3
1
h x 45
10
PSO20MEC
D1
0056635
11/12
L9349
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - All Rights Reserved
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