FDMS3624S PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A connected to enable easy placement and routing of synchronous Q2: N-Channel buck converters. The control MOSFET (Q1) and synchronous Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A SyncFET (Q2) have been designed to provide optimal power efficiency. Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A Applications Low inductance packaging shortens rise/fall times, resulting in lower switching losses Computing MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing Communications General Purpose Point of Load RoHS Compliant Notebook VCORE Pin 1 G1 D1 D1 D1 D1 Pin 1 PHASE (S1/D2) G2 S2 S2 Top S2 Bottom Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID TJ, TSTG Units V V (Note 4) ±12 ±12 TC = 25 °C 30 60 -Continuous TA = 25 °C 17.51a 301b 70 120 Single Pulse Avalanche Energy PD Q2 25 -Continuous (Package limited) -Pulsed EAS Q1 25 (Note 3) A 29 86 Power Dissipation for Single Operation TA = 25 °C 2.21a 2.51b Power Dissipation for Single Operation TA = 25 °C 1.01c 1.01d Operating and Storage Junction Temperature Range mJ -55 to +150 W °C Thermal Characteristics RθJA 571a Thermal Resistance, Junction to Ambient RθJA Thermal Resistance, Junction to Ambient RθJC Thermal Resistance, Junction to Case 1c 125 3.0 501b 1201d °C/W 2.2 Package Marking and Ordering Information Device Marking 08OD 07OD Device Package Reel Size Tape Width Quantity FDMS3624S Power 56 13 ” 12 mm 3000 units ©2011 Fairchild Semiconductor Corporation FDMS3624S Rev.C2 1 www.fairchildsemi.com FDMS3624S PowerTrench® Power Stage December 2011 Symbol Parameter Test Conditions Type Min 25 25 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ID = 1 mA, VGS = 0 V Q1 Q2 ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C ID = 10 mA, referenced to 25 °C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V Q1 Q2 1 500 μA μA IGSS Gate to Source Leakage Current VGS = 12 V/-8 V, VDS= 0 V Q1 Q2 ±100 ±100 nA nA 2.0 2.2 V V 12 24 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA VGS = VDS, ID = 1 mA Q1 Q2 ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C ID = 10 mA, referenced to 25 °C Q1 Q2 -4 -3 VGS = 10 V, ID = 17.5 A VGS = 4.5 V, ID = 16 A VGS = 10 V, ID = 17.5 A,TJ =125 °C Q1 3.8 4.4 5.4 5.0 5.7 7.0 VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 27 A VGS = 10 V, ID =30 A ,TJ =125 °C Q2 1.5 1.8 2.1 1.8 2.2 2.7 VDS = 5 V, ID = 17.5 A VDS = 5 V, ID = 30 A Q1 Q2 100 240 S Q1: VDS = 13 V, VGS = 0 V, f = 1 MHZ Q1 Q2 1570 4045 pF Q1 Q2 448 946 pF Q1 Q2 61 117 pF Q1 Q2 0.4 0.9 Ω rDS(on) gFS Drain to Source On Resistance Forward Transconductance 0.8 1.1 1.2 1.4 mV/°C mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Q2: VDS = 13 V, VGS = 0 V, f = 1 MHZ Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ©2011 Fairchild Semiconductor Corporation FDMS3624S Rev.C2 Q1: VDD = 13 V, ID = 17.5 A, RGEN = 6 Ω Q2: VDD = 13 V, ID = 30A, RGEN = 6 Ω VGS = 0 V to 10 V Q1 VDD = 13 V, VGS = 0 V to 4.5 V ID = 17.5 A Q2 VDD = 13 V, ID = 30 A 2 Q1 Q2 7 11 ns Q1 Q2 2 5 ns Q1 Q2 23 39 ns Q1 Q2 2 4 ns Q1 Q2 26 59 nC Q1 Q2 12 27 nC Q1 Q2 3.3 8.2 nC Q1 Q2 2.7 7.6 nC www.fairchildsemi.com FDMS3624S PowerTrench® Power Stage Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Q1 Q2 0.8 0.8 1.2 1.2 V Q1 Q2 23 28 ns Q1 Q2 9 28 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 17.5 A VGS = 0 V, IS = 30 A (Note 2) (Note 2) Q1 IF = 17.5 A, di/dt = 100 A/μs Q2 IF = 30 A, di/dt = 300 A/μs Notes: 1.RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper a. 57 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G d. 120 °C/W when mounted on a minimum pad of 2 oz copper c. 125 °C/W when mounted on a minimum pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Q1 :EAS of 29 mJ is based on starting TJ = 25 oC; N-ch: L = 1.2 mH, IAS = 7 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 16 A. Q2: EAS of 86 mJ is based on starting TJ = 25 oC; N-ch: L = 0.6 mH, IAS = 17 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 31 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2011 Fairchild Semiconductor Corporation FDMS3624S Rev.C2 3 www.fairchildsemi.com FDMS3624S PowerTrench® Power Stage Electrical Characteristics TJ = 25 °C unless otherwise noted 70 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 ID, DRAIN CURRENT (A) 3.0 VGS = 10 V VGS = 4.5 V 50 VGS = 3.5 V 40 VGS = 3 V 30 VGS = 2.5 V 20 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.3 0.6 0.9 1.2 1.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2.5 VGS = 2.5 V 2.0 VGS = 3 V 1.5 1.0 VGS = 3.5 V VGS = 4.5 V VGS = 10 V 0.5 0 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics rDS(on), DRAIN TO 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 -50 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 40 TJ = 150 oC 30 TJ = 25 oC 20 TJ = -55 oC 10 1.5 2.0 2.5 8 TJ = 125 oC 4 TJ = 25 oC 2 3 4 5 6 7 8 9 10 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS3624S Rev.C2 12 70 VDS = 5 V 1.0 16 Figure 4. On-Resistance vs Gate to Source Voltage 50 0 0.5 70 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 60 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 17.5 A 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature 70 50 20 ID = 17.5 A VGS = 10 V 0.6 -75 40 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 1.6 30 ID, DRAIN CURRENT (A) 4 www.fairchildsemi.com FDMS3624S PowerTrench® Power Stage Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 2000 ID = 17.5 A 1000 Ciss 8 VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15 V 6 VDD = 13 V 4 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 10 0.1 0 0 4 8 12 16 20 24 28 1 Figure 7. Gate Charge Characteristics 80 70 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 50 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 60 0.01 0.1 1 10 VGS = 10 V 50 VGS = 4.5 V 40 30 20 10 1 0.001 Limited by Package o RθJC = 3.0 C/W 0 25 50 50 100 125 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 P(PK), PEAK TRANSIENT POWER (W) 1000 100 μs 10 1 ms 1 0.1 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s 10s DC RθJA = 125 oC/W TA = 25 oC 0.01 0.01 0.1 1 10 100200 VDS, DRAIN to SOURCE VOLTAGE (V) o RθJA = 125 C/W 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS3624S Rev.C2 SINGLE PULSE Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDMS3624S PowerTrench® Power Stage Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE 0.01 t2 o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA RθJA = 125 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS3624S Rev.C2 6 www.fairchildsemi.com FDMS3624S PowerTrench® Power Stage Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 120 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 ID, DRAIN CURRENT (A) 4 VGS = 10 V VGS = 4.5 V VGS = 3.5 V 80 VGS = 3 V 60 VGS = 2.5 V 40 20 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.3 0.6 0.9 1.2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 2.5 V 3 2 1 VGS = 4.5 V VGS = 10 V 0 1.5 0 20 Figure 14. On-Region Characteristics rDS(on), DRAIN TO 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 7 ID = 30 A VGS = 10 V -50 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 60 TJ = 25 oC 40 TJ = -55 oC 20 0 1.0 1.5 2.0 2.5 5 ID = 30 A 4 3 TJ = 125 oC 2 1 TJ = 25 oC 2 200 100 4 6 8 10 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 18. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS3624S Rev.C2 120 Figure 17. On-Resistance vs Gate to Source Voltage VDS = 5 V TJ = 125 oC 100 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 100 80 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 6 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 16. Normalized On-Resistance vs Junction Temperature 120 60 Figure 15. Normalized on-Resistance vs Drain Current and Gate Voltage 1.6 0.6 -75 40 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 VGS = 3.5 V VGS = 3 V Figure 19. Source to Drain Diode Forward Voltage vs Source Current 7 www.fairchildsemi.com FDMS3624S PowerTrench® Power Stage Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted 10000 VGS, GATE TO SOURCE VOLTAGE (V) 10 ID = 30 A Ciss CAPACITANCE (pF) 8 VDD = 10 V 6 VDD = 13 V 4 VDD = 15 V 1000 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 10 0.1 0 0 10 20 30 40 50 60 1 150 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 TJ = 25 oC TJ = 100 oC 10 TJ = 125 oC 1 0.001 0.01 0.1 1 10 100 120 VGS = 10 V 90 VGS = 4.5 V 60 Limited by Package 30 o RθJC = 2.2 C/W 0 25 1000 50 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 1 ms 10 ms 100 ms 1s 10s o RθJA = 120 C/W DC TA = 25 oC 0.01 0.01 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) SINGLE PULSE 1000 o RθJA = 120 C/W 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 24. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS3624S Rev.C2 150 3000 10 SINGLE PULSE TJ = MAX RATED 125 Figure 23. Maximum Continuous Drain Current vs Case Temperature 100 μs THIS AREA IS LIMITED BY rDS(on) 100 o Figure 22. Unclamped Inductive Switching Capability 200 100 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 0.1 30 Figure 21. Capacitance vs Drain to Source Voltage Figure 20. Gate Charge Characteristics 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 25. Single Pulse Maximum Power Dissipation 8 www.fairchildsemi.com FDMS3624S PowerTrench® Power Stage Typical Characteristics (Q2 N-Channel) TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA RθJA = 120 C/W 0.001 (Note 1b) 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 26. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS3624S Rev.C2 9 www.fairchildsemi.com FDMS3624S PowerTrench® Power Stage Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverse recovery characteristic of the FDMS3624S. 35 IDSS, REVERSE LEAKAGE CURRENT (A) -2 30 CURRENT (A) 25 20 di/dt = 300 A/μs 15 10 5 0 -5 0 40 80 120 160 200 240 280 320 360 TIME (ns) TJ = 125 oC -3 10 TJ = 100 oC -4 10 TJ = 25 oC -5 10 -6 10 0 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) Figure 27. FDMS3624S SyncFET body diode reverse recovery characteristic ©2011 Fairchild Semiconductor Corporation FDMS3624S Rev.C2 10 Figure 28. SyncFET body diode reverse leakage versus drain-source voltage 10 www.fairchildsemi.com FDMS3624S PowerTrench® Power Stage Typical Characteristics (continued) FDMS3624S PowerTrench® Power Stage 2X A PKG CL 8 B 5 1.27 TYP 0.65 TYP 0.63 8 PKG 5.10 4.00 C L 0.00 5.10 4.90 0.10 C 2.00 Dimensional Outline and Pad Layout 6 5 2.52 1.60 6.10 5.90 CL 7 2.15 0.00 4.16 PIN #1 IDENT MAY A PPEAR AS OPTIONAL 1 2.13 0.10 C 4 2X TO P VIEW 0.63 1 1.18 SEE DETAIL A CL 1.21 2 3 4 KEEP 2.31 OUT 3.15 AREA 0.59 3.18 RECOM MENDE D LAND PATTERN SIDE VIEW 3.00 2.80 0.58 0.38 0.35 6X 1 2 0.10 0.05 0.70 0.50 3 C A B C 1.32 1.12 0.71 0.61 4 NOTES: UNLESS OTHERWIS E SPECIFIED 2.25 2.05 3.90 3.70 0.58 0.38 8 0.44 0.24 7 6 1.10 0.90 1.02 0.82 1.27 3.81 BOTTO M VIEW 0.51 0.31 0.10 C 0.08 C 5 0.30 0.20 DETAIL A 0.05 0.00 C A) DOES NOT FULLY CONFORM TO JEDEC REGISTRA TION, M O-240, ISSUE B DA TED 10/2009. B) ALL DIMENSIONS ARE IN M ILLIMETERS. C) DIMENSIONS DO NOT INCLUDE B URRS OR MO LD FLASH. MOLD FLASH OR BURRS DO ES NO T EX CE ED 0.10MM. D) DIMENSIONING AND TOLERANCING PE R ASME Y14.5M-1994. E) IT IS RECOMM ENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. F) DRAWING FILE NA ME: PQN08E REV 4. SEA TING PLANE (SCALE: 2X) ©2011 Fairchild Semiconductor Corporation FDMS3624S Rev.C2 11 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I60 ©2011 Fairchild Semiconductor Corporation FDMS3624S Rev.C2 12 www.fairchildsemi.com FDMS3624S PowerTrench® Power Stage TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ FPS™ The Power Franchise® ® AccuPower™ F-PFS™ ® PowerTrench® Auto-SPM™ FRFET® SM Global Power Resource PowerXS™ AX-CAP™* TinyBoost™ GreenBridge™ Programmable Active Droop™ BitSiC® TinyBuck™ Build it Now™ Green FPS™ QFET® TinyCalc™ CorePLUS™ QS™ Green FPS™ e-Series™ TinyLogic® CorePOWER™ Quiet Series™ Gmax™ TINYOPTO™ CROSSVOLT™ RapidConfigure™ GTO™ TinyPower™ CTL™ IntelliMAX™ ™ TinyPWM™ Current Transfer Logic™ ISOPLANAR™ TinyWire™ DEUXPEED® Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® Dual Cool™ SignalWise™ and Better™ TriFault Detect™ ® EcoSPARK SmartMax™ MegaBuck™ TRUECURRENT®* EfficentMax™ SMART START™ MICROCOUPLER™ μSerDes™ ESBC™ Solutions for Your Success™ MicroFET™ ® SPM MicroPak™ ® STEALTH™ MicroPak2™ UHC® SuperFET® MillerDrive™ Fairchild® Ultra FRFET™ ® SuperSOT™-3 MotionMax™ Fairchild Semiconductor UniFET™ SuperSOT™-6 Motion-SPM™ FACT Quiet Series™ VCX™ SuperSOT™-8 mWSaver™ FACT® ® VisualMax™ SupreMOS OptoHiT™ FAST® VoltagePlus™ SyncFET™ OPTOLOGIC® FastvCore™ ® XS™ OPTOPLANAR Sync-Lock™ FETBench™ ®* FlashWriter® *