STMICROELECTRONICS MSC80195

MSC80195
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
..
..
..
.
EMITTER BALLASTED
CLASS A LINEAR OPERATION
COMMON EMITTER
VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
ft 3.2 GHz TYPICAL
NOISE FIGURE 12.0 dB @ 2 GHz
POUT = 28 dBm MIN. @ 2.0 GHz
.250 2LFL (S011)
hermetically sealed
ORDER CODE
MSC80195
BRANDING
80195
PIN CONNECTION
DESCRIPTION
The MSC80195 is a hermetically sealed NPN
power transistor featuring a unique matrix structure.
This device is specifically designed for Class A
linear applications to provide high gain and high
output power at the 1.0 dB compression point.
1. Collector
2. Emitter
3. Baser
4. Emitter
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
Value
Unit
—
W
Device Bias Current
300
mA
Collector-Emitter Bias Voltage*
20
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
− 65 to +200
°C
35
°C/W
PDISS
IC
VCE
Parameter
Power Dissipation
(see Safe Area)
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1/6
MSC80195
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Symbol
Value
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 1mA
IE = 0mA
50
—
—
V
BVEBO
IE = 1mA
IC = 0mA
3.5
—
—
V
BVCEO
IC = 5mA
IB = 0mA
20
—
—
V
ICEO
VCE = 18V
—
—
0.5
mA
hFE
VCE = 5V
15
—
120
—
IC = 100mA
DYNAMIC
Symbol
G P*
f = 2.0 GHz
POUT = 28 dBm
∆GP*
f = 2.0 GHz
POUT = 28 dBm
COB
f = 1 MHz
VCB = 28 V
* Note:
VCE = 18 V
IC = 140mA
2/6
Value
Test Conditions
∆POUT = 10 dB
Unit
Min.
Typ.
Max.
—
—
1
dB
7.5
8.5
—
dB
—
—
3.0
pF
MSC80195
TYPICAL PERFORMANCE
TYPICAL POWER OUTPUT & GAIN @ 1dB
COMPRESSION POINT vs FREQUENCY
TYPICAL POWER OUTPUT & GAIN @
1dB COMPRESSION POINT vs
COLLECTOR CURRENT
MAXIMUM OPERATING AREA FOR
FORWARD BIAS OPERATION
TYPICAL LINEAR GAIN vs
COLLECTOR CURRENT
3/6
MSC80195
TYPICAL S−PARAMETERS
VCE = 18 V
IC = 140mA
Zg = 50 ohms
4/6
MSC80195
TEST CIRCUIT
Ref.: Dwg. No. C127304A
All dimensions are in inches.
PACKAGE MECHANICAL DATA
5/6
MSC80195
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
6/6