STC08DE150 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT™ 1500 V - 8 A - 0.075 W PRELIMINARY DATA Figure 1: Package Table 1: General Features n n n n VCS(ON) IC RCS(ON) 0.6 V 8A 0.075 W LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1500 V VERY LOW CISS DRIVEN BY RG = 47 W APPLICATION n SINGLE SWITCH SMPS BASED ON THREE PHASE MAINS DESCRIPTION The STC08DE150 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed at providing the best performance in ESBT topology. The STC08DE150 is designed for use in aux flyback smps for any three phase application. 1 2 3 4 TO247-4L Figure 2: Internal Schematic Diagram Electrical Symbol Device Structure Table 2: Order Code Part Number Marking Package Packaging STC08DE150 C08DE150 TO247-4L TUBE January 2005 Rev. 1 1/9 STC08DE150 Table 3: Absolute Maximum Ratings Symbol Parameter VCS(SS) Collector-Source Voltage (VBS = VGS = 0 V) VBS(OS) Base-Source Voltage (IC= 0, VGS = 0 V) VSB(OS) Source-Base Voltage (IC= 0, VGS = 0 V) VGS IC ICM IB Value Unit 1500 V 30 V 9 V ± 20 V Collector Current 8 A Collector Peak Current (tp < 5ms) 15 A Base Current 4 A Gate-Source Voltage IBM Base Peak Current (tp < 1ms) 8 A Ptot Total Dissipation at TC = 25 oC 155 W Tstg Storage Temperature -65 to 125 °C TJ Max. Operating Junction Temperature 125 °C Table 4: Thermal Data Symbol Rthj-case Parameter Unit Thermal Resistance Junction-Case Max 0.64 o C/W Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICS(SS) Collector-Source Current (VBS = VGS = 0 V) VCS(SS) = 1500 V 100 mA IBS(OS) Base-Source Current VBS(OS) = 30 V 10 mA VSB(OS) = 9 V 100 mA VGS = ± 20 V 500 nA (IC = 0 , VGS = 0 V) ISB(OS) Source-Base Current (IC = 0 , VGS = 0 V) IGS(OS) Gate-Source Leakage (VBS = 0 V) VCS(ON) Collector-Source ON Voltage hFE DC Current Gain VGS = 10 V IC = 8 A IB = 1.6 A 0.6 VGS = 10 V IC = 5 A IB = 0.5 A 0.6 IC = 8 A VGS = 10 V 4.5 7.5 VGS = 10 V 8 10 IC = 5 A VBS(ON) Base-Source ON Voltage VGS(th) Ciss VCS = 1 V V V VGS = 10 V IC = 8 A IB = 1.6 A 1.5 IB = 0.5 A 1 Gate Threshold Voltage VGS = 10 V IC = 5 A VBS = VGS Input Capacitance VCS = 25 V f = 1 MHz VGS = VCB =0 750 pF IC = 8 A VGS = 10 V 12.5 nC QGS(tot) Gate-Source Charge IB = 250 mA 1.5 2.2 2 V V 3 V VCS = 25 V VCB = 0 INDUCTIVE LOAD VGS = 10 V RG = 47 W ts Storage Time VClamp = 1200 V tp = 4 ms 526 ns tf Fall Time IB = 0.5 A 8.5 ns VCSW 2/9 VCS = 1 V 1.4 IC = 5 A Maximum Collector-Source RG = 47 W Voltage Switched Without Snubber hFE = 5 A IC = 8 A 15 V STC08DE150 Symbol Parameter VCS(dyn) Collector-Source Dynamic Voltage (500 ns) Test Conditions VCC = VClamp = 300 V VGS = 10 V RG = 47 W IC = 4 A IB = 0.8 A tpeak = 500 ns Min. Typ. Max. Unit 6 V 2.2 V IBpeak = 8 A (2 IC) VCS(dyn) Collector-Source Dynamic Voltage (1ms) VCC = VClamp = 300 V VGS = 10 V RG = 47 W IC = 4 A IB = 0.8 A tpeak = 500 ns IBpeak = 8 A (2 IC) 3/9 STC08DE150 Figure 3: Output Characteristics Figure 6: Dynamic Collector-Emitter Saturation Voltage Figure 4: Reverse Biased Safe Operating Area Figure 7: Gate Threshold Voltage vs Temperature Figure 5: DC Current Gain 4/9 STC08DE150 Figure 8: Collector-Source On Voltage Figure 11: Collector-Source On Voltage Figure 9: Base-Source On Voltage Figure 12: Base-Source On Voltage Figure 10: Inductive Load Switching Time Figure 13: Inductive Load Switching Time 5/9 STC08DE150 Figure 14: Enlargement FBSOA Circuit Table 6: Components, Values VB1 = 4.16 V C1 = 4700 µF D1 = BA157 C2 ≤ 1000 pF R1 = 1 W VCC = 1500 V R2 = 100 W Vg = 10 V R3 = 180 W Pulse Time = 5 µs Rg = 47 W 6/9 STC08DE150 TO247-4L MECHANICAL DATA mm DIM. MIN. TYP. MAX. A 4.85 5.15 A1 2.20 2.60 b 0.95 b1 1.30 1.70 b2 2.50 2.90 c 0.40 0.80 D 19.85 20.15 E 15.45 e 1.10 1.30 15.75 2.54 e1 5.08 L 14.20 L1 3.70 L2 14.80 4.30 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.50 7536918A 7/9 STC08DE150 Table 7: Revision History 8/9 Date Release 20-Jan-2005 1 Change Designator First Release. STC08DE150 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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