STS01DTP06 DUAL NPN-PNP COMPLEMENTARY BIPOLAR TRANSISTOR PRELIMINARY DATA Figure 1: Package Table 1: General Features n n n n VCE(sat) hFE IC 0.35 V > 100 1A HIGH GAIN LOW VCE(sat) SIMPLIFIED CIRCUIT DESIGN REDUCED COMPONENT COUNT APPLICATION n PUSH-PULL OR TOTEM-POLE CONFIGURATION n MOSFET AND IGBT GATE DRIVING n MOTOR, RELAY AND SOLENOID DRIVING SO-8 DESCRIPTION The STS01DTP06 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar technology. The STS01DTP06 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs driver. Figure 2: Internal Schematic Diagram Table 2: Order Codes Part Number Marking Package Packaging STS01DTP06T4 S01DTP06 SO-8 Tape & Reel April 2005 Rev. 1 1/8 STS01DTP06 Table 3: Absolute Maximum Ratings Symbol Parameter NPN PNP Unit VCBO Collector-Base Voltage (IE = 0) 60 -60 V VCEO Collector-Emitter Voltage (IB = 0) 30 -30 V VEBO Emitter-Base Voltage (IC= 0) 5 -5 V Collector Current 3 -3 A Collector Peak Current (tp < 5ms) 6 -6 A Base Current 1 -1 A Base Peak Current (tp < 1ms) 2 -2 A IC ICM IB IBM Ptot o 2 W o 1.6 W Total Dissipation at TC = 25 C single Ptot Total Dissipation at TC = 25 C couple Tstg Storage Temperature TJ Max. Operating Junction Temperature -65 to 150 °C 150 °C For PNP type voltage and current values are negative. Table 4: Thermal Data Symbol Parameter Unit Rthj-amb(1) Thermal Resistance Junction-ambient (Single Operation) (1) Thermal Resistance Junction-ambient R thj-amb Max 62.5 Max 78 oC/W o C/W (Dual Operation) (1) When mounted on 1 inch square pad of 2 oz. copper, t ≤10 sec Table 5: Q1-NPN Transistor Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol Parameter Collector Cut-off Current ICBO Test Conditions Min. Typ. Max. Unit VCB = 60 V 0.1 µA VCE = 30 V 1 µA VEB = 5 V 1 µA (IE = 0) ICEO Collector Cut-off Current (IB = 0) IEBO Emitter Cut-off Current (IC = 0) V(BR)CEO* Collector-Emitter Breakdown Voltage IC = 10 mA 30 V (IB = 0) * VCE(sat) VBE(sat) hFE* * Collector-Emitter IC = 1 A IB = 10 mA Saturation Voltage IC = 2 A IB = 100 mA Base-Emitter IC = 1 A IB = 10 mA Saturation Voltage DC Current Gain IC = 1 A VCE = 2 V 100 IC = 3 A VCE = 2 V 30 * Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %. 2/8 0.35 0.85 1 V 0.7 V 1.1 V STS01DTP06 Table 6: Q2-PNP Transistor Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICBO Parameter Collector Cut-off Current Test Conditions Min. Typ. Max. Unit VCB = -60 V -0.1 µA VCE = -30 V -1 µA VEB = -5 V -1 µA (IE = 0) Collector Cut-off Current ICEO (IB = 0) Emitter Cut-off Current IEBO (IC = 0) V(BR)CEO* Collector-Emitter Breakdown Voltage IC = -10 mA -30 V (IB = 0) * VCE(sat) VBE(sat) hFE* * Collector-Emitter IC = -1 A IB = -10 mA Saturation Voltage IC = -2 A IB = -100 mA Base-Emitter IC = -1 A IB = -10 mA Saturation Voltage DC Current Gain IC = -1 A VCE = -2 V 100 IC = -3 A VCE = -2 V 30 * Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %. Figure 3: Reverse Biased Area Q1 NPN Transistor -0.35 -0.85 -1 V -0.7 V -1.1 V Figure 4: DC Current Gain Q1 NPN Transistor 3/8 STS01DTP06 Figure 5: DC Current Gain Q1 NPN Transistor Figure 8: Collector-Emitter Saturation Voltage Q1 NPN Transistor Figure 6: Base-Emitter Saturation Voltage Q1 NPN Transistor Figure 9: Reverse Biased Area Q2 PNP Transistor Figure 7: DC Current Gain Q2 PNP Transistor Figure 10: DC Current Gain Q2 PNP Transistor 4/8 STS01DTP06 Figure 11: Collector-Emitter Saturation Voltage Q2 PNP Transistor Figure 12: Base-Emitter Saturation Voltage Q2 PNP Transistor Figure 13: Typical Application 5/8 STS01DTP06 Table 7: Revision History 6/8 Version Release Date 22-Apr-2005 1 Change Designator First Release. STS01DTP06 SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 0.196 c1 45 (typ.) D 4.8 5.0 0.188 E 5.8 6.2 0.228 1.27 e e3 3.81 0.150 F 3.8 4.0 0.14 L 0.4 1.27 0.015 M S 0.244 0.050 0.6 0.157 0.050 0.023 8 (max.) 7/8 STS01DTP06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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