STMICROELECTRONICS STC04IE170HV

STC04IE170HV
Emitter switched bipolar transistor
ESBT® 1700V - 4A - 0.17 W
General features
Table 1.
General features
VCS(ON)
IC
RCS(ON)
0.7V
4A
0.17Ω
■
High voltage / high current cascode
configuration
■
Low equivalent on resistance
■
Very fast-switch, up to 150 kHz
■
Squared RBSOA, up to 1700 V
■
Very low CISS driven by RG = 47 Ω
■
Very low turn-off cross over time
■
In compliance with the 2002/93/EC European
Directive
1
23
4
TO247-4L HV
Internal schematic diagrams
Description
The STC04IE170HV is manufactured in
Monolithic ESBT technology, aimed to provide
the best performance in High Frequency / High
voltage applications. It is designed for use in Gate
Driven based topologies.
Applications
■
Flyback / forward SMPS
■
Buck-bust converter
Order codes
Part Number
Marking
Package
Packing
STC04IE170HV
C04IE170HV
TO247-4L HV
Tube
September 2006
Rev 1
1/11
www.st.com
11
STC04IE170HV
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STC04IE170HV
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
1700
V
VCS(SS)
Collector-source voltage (V BS =VGS =0V)
VBS(OS)
Base-source voltage (IC =0, VGS =0V)
30
V
VSB(OS)
Source-base voltage (IC =0, VGS =0V)
17
V
± 17
V
Collector current
4
A
Collector peak current (tP < 5ms)
15
A
Base current
2
A
IBM
Base peak current (tP < 1ms)
4
A
Ptot
Total dissipation at T c ≤ 25°C
178
W
Tstg
Storage temperature
-40 to 150
°C
150
°C
Value
Unit
0.7
°C/W
VGS
IC
ICM
IB
TJ
Table 3.
Symbol
Rthj-case
Gate-source voltage
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-case
max
3/11
Electrical characteristics
2
STC04IE170HV
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICS(SS)
Collector-source current
VCS(SS) =1700V
(VBS =V GS =0V)
100
µA
IBS(OS)
Base-source current
(IC =0, VGS =0V)
VBS(OS) =30V
10
µA
ISB(OS)
Source-base current
(IC =0, VGS =0V)
VSB(OS) =17V
100
µA
IGS(OS)
Gate-source leakage
(VBS =0V)
VGS = ± 17V
100
nA
VCS(ON)
Collector-source ON
voltage
1.5
1.4
V
V
1.3
0.9
1.5
1.1
V
V
3
4
V
VGS =10V IC =4A
IB =0.8A
VCS =1V
VGS =10V IC =4A
4
5.5
VCS =1V
V GS =10V IC =1.5A
7
11
DC current gain
VBS(ON)
Base-source ON
voltage
VGS =10V
IC =4A
VGS =10V
IC =1.5A IB =0.15A
VGS(th)
Gate threshold voltage
VBS =V GS
IB =250µA
VCS =25V
f =1MHz
QGS(tot)
ts
tf
ts
tf
VCS(dyn)
Input capacitance
IB =0.8A
VGS=0V
Gate-source Charge
VGS=10V
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
RG =47Ω
VClamp =1360V
tp =4µs
INDUCTIVE LOAD
Storage time
Fall time
Collector-source
dynamic voltage
(500ns)
0.7
0.6
VGS =10V IC =1.5A IB =0.15A
hFE
Ciss
4/11
Electrical characteristics
IC =2A
IB =0.4A
VGS =10V
RG =47Ω
VClamp =1360V
tp =4µs
IC =2A
IB =0.2A
2
510
pF
3.9
nC
770
ns
10
ns
410
ns
10
ns
5.36
V
VCC =VClamp =400V
VGS =10V
IC =1.5A
IB = 0.3A
tpeak =500ns
RG =47Ω
IBpeak =3A (2IC )
STC04IE170HV
Table 4.
Symbol
VCS(dyn)
VCSW
Electrical characteristics
Electrical characteristics
Parameter
Collector-source
dynamic voltage
(1µs)
Test Conditions
Min.
Typ.
Max.
Unit
VCC =VClamp =400V
VGS =10V
IC = 1.5A
IB = 0.3A
tpeak =500ns
RG =47Ω
Maximum collectorsource voltage switched RG =47Ω
without snubber
4.32
V
IBpeak = 3A (2IC )
hFE =5
IC = 4A
1700
V
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
Dynamic collector-source
saturation voltage
Figure 3.
DC current gain
Figure 4.
Gate threshold voltage vs
temperature
5/11
Electrical characteristics
6/11
STC04IE170HV
Figure 5.
Collector-source On voltage
Figure 6.
Collector-source On voltage
Figure 7.
Base-source On voltage
Figure 8.
Base-source On voltage
Figure 9.
Inductive load switching time Figure 10. Inductive load switching time
STC04IE170HV
Electrical characteristics
Figure 11. Reverse biased safe
operating area
7/11
Package mechanical data
3
STC04IE170HV
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/11
STC04IE170HV
Package mechanical data
TO247-4L HV MECHANICAL DATA
DIM.
A
A1
A2
MIN.
4.85
2.20
b
0.95
b2
c
D
D1
E
e
e1
L
L1
L2
L3
øP
S
2.50
0.40
23.85
15.45
2.54
5.08
10.20
2.20
mm.
TYP
2.50
1.27
1.10
24
21.50
15.60
2.50
18.50
3
3.55
MAX.
5.15
2.60
1.30
2.90
0.80
24.15
15.75
10.80
2.80
3.65
5.50
7734874
9/11
Revision history
4
STC04IE170HV
Revision history
Table 5.
10/11
Revision history
Date
Revision
11-Sep-2006
1
Changes
First release.
STC04IE170HV
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