STF92 ® SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA ■ ■ ■ ■ Type Marking STF92 692 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-89 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS STF42 APPLICATIONS VIDEO AMPLIFIER CIRCUITS (RGB CATHODE CURRENT CONTROL) ■ TELEPHONE WIRELINE INTERFACE (HOOK SWITCHES, DIALER CIRCUITS) SOT-89 ■ INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) -300 V V CEO Collector-Emitter Voltage (I B = 0) -300 V V EBO Emitter-Base Voltage (I C = 0) IC I CM Collector Current Collector Peak Current o P tot Total Dissipation at T C = 25 C T stg Storage Temperature Tj May 2002 Max. Operating Junction Temperature -5 V -0.1 A -0.2 A 1.3 W -65 to 150 o C 150 o C 1/4 STF92 THERMAL DATA R t hj-amb • Thermal Resistance Junction-Ambient Max o 96.1 C/W • Device mounted on a PCB area of 1 cm 2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V (BR)CBO Parameter Test Conditions Min. Typ. Max. Unit -10 -10 -100 nA µA µA -50 nA Collector Cut-off Current (I E = 0) V CB = -200 V V CB = -200 V V CB = -300 V Emitter Cut-off Current (I C = 0) V EB = -5 V Collector-Base Breakdown Voltage (I E = 0) I C = -100 µA -300 V I C = -10 mA -300 V -5 V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) T C = 150 o C V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = -100 µA V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = -30 mA I B = -5 mA -0.6 V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = -30 mA I B = -5 mA -1.2 V DC Current Gain I C = -30 mA V CE = -10 V h FE ∗ Transition Frequency I C = -15mA V CE = -10V f = 20 MHz C CBO Collector-Base Capacitance IE = 0 V CB = -10 V f = 1 MHz C EBO Emitter-Base Capacitance IC = 0 V EB = -2 V f = 1 MHz fT ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % 2/4 75 60 MHz 6 pF 22 pF STF92 SOT-89 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 1.4 1.6 55.1 63.0 B 0.44 0.56 17.3 22.0 B1 0.36 0.48 14.2 18.9 C 0.35 0.44 13.8 17.3 C1 0.35 0.44 13.8 17.3 D 4.4 4.6 173.2 181.1 D1 1.62 1.83 63.8 72.0 E 2.29 2.6 90.2 102.4 e 1.42 1.57 55.9 61.8 e1 2.92 3.07 115.0 120.9 H 3.94 4.25 155.1 167.3 L 0.89 1.2 35.0 47.2 P025H 3/4 STF92 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4