STTA112U TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 1A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATION HIGH REVERSE VOLTAGE CAPABILITY SMB DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode operations. They are particularly suitable in motor control circuitries, or in primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitablefor the secondaryof SMPSas high voltage rectifier diodes. ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current Value Unit 1200 V 6 A IFRM Repetitive peak forward current tp = 5 µs F = 5kHz square 10 A IFSM Surge non repetitive forward current tp = 10ms sinusoidal 20 A T stg Storage temperature range - 65 to + 150 °C 125 °C Tj Maximum operating junction temperature TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 5A 1/8 STTA112U THERMAL AND POWER DATA Symbol Rth(j-I) P1 Pmax Parameter Test conditions Value Unit 23 °C/W Junction to lead thermal resistance Conduction power dissipation IF(AV) = 0.8A δ = 0.5 Tlead= 93°C 1.4 W Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tlead= 90°C 1.5 W STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR * ** Parameter Forward voltage drop Threshold voltage Rd Dynamic resistance Typ Max Unit Tj = 25°C Tj = 125°C 1.65 1.5 V 1.1 VR = 0.8 x VRRM Tj = 25°C Tj = 125°C 10 300 µA 90 Ip < 3.IF(AV) Tj = 125°C 1.15 V 350 mΩ Max Unit IF = 1A Reverse leakage current Vto Test pulses : Test conditions Min * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% To evaluatethe maximum conduction losses use the following equation : P = Vto x I F(AV) + Rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr IRM S factor Parameter Reverse recovery time Maximum recovery current Softness factor Test conditions Min ns Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/µs VR = 30V Tj = 125°C VR = 600V dIF/dt = -8 A/µs dIF/dt = -50 A/µs Tj = 125°C VR = 600V dIF/dt = -50 A/µs Typ 65 115 IF = 1A A 1.8 5 - IF =1A 0.7 TURN-ON SWITCHING Symbol 2/8 Parameter t fr Forward recovery time VFp Peak forward voltage Test conditions Tj = 25°C IF = 1 A, dIF/dt = 8 A/µs measured at 1.1 × VF max Min Typ Max Unit 900 ns 35 V STTA112U Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (Maximum values). IFM(A) P1(W) 1.50 δ = 0.2 δ = 0.1 50.0 δ = 0.5 Tj=125°C 1.25 10.0 1.00 δ= 1 0.75 1.0 0.50 0.25 0.00 0.0 IF(av) (A) 0.1 0.2 0.3 0.4 0.5 0.6 VFM(V) 0.7 0.8 0.9 1.0 Fig. 3: Relative variation of thermal transient impedance junction to lead versus pulse duration. 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 15.0 12.5 VR=600V Tj=125°C IF=2*IF(av) 10.0 7.5 5.0 2.5 dIF/dt(A/µs) 0.0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). 0 20 40 60 80 100 120 140 160 180 200 Fig. 6: Softness factor (tb/ta) versus dIF/dt (Typical values). trr(ns) S factor 300 1.00 IF=2*IF(av) 250 VR =600V Tj=125°C 200 I F<2*IF(av) VR =600V Tj=125°C 0.80 150 0.60 100 50 dIF/dt(A/µs) 0 0 20 40 60 80 100 120 140 160 180 200 dIF/dt(A/µs) 0.40 0 20 40 60 80 100 120 140 160 180 200 3/8 STTA112U Fig. 7: Relative variation of dynamic parameters versus junction temperature (Reference Tj=125°C). Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence). VFP(V) 1.1 80 S factor Tj=125°C IF=2*IF(av) 70 1.0 60 50 0.9 IRM 40 30 0.8 20 Tj(°C) 0.7 25 50 10 75 100 125 Fig. 9: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 800 Tj=125°C IF=2*IF(av) 700 600 VFR=1.1*VF max. 500 400 300 200 4/8 dIF/dt(A/µs) 0 20 40 60 80 100 0 dIF/dt(A/µs) 0 20 40 60 80 100 STTA112U APPLICATION DATA The 1200V TURBOSWITCHTM series has been designed to provide the lowest overall power losses in all frequency or high pulsed current operations. In such application (fig. A to D), the way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 CONDUCTION LOSSES in the diode REVERSE LOSSES in the diode Watts SWITCHING LOSSES in the diode SWITCHING LOSSES in the diode due to the diode Fig. A : ”FREEWHEEL MODE”. SWITCHING TRANSISTOR DIODE: TURBOSWITCH IL VR tp T F = 1/T δ = tp/T LOAD 5/8 STTA112U APPLICATION DATA (Cont’d) Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE. PWM tp T F = 1/T δ = tp/T Fig. D : RECTIFIER DIODE. Fig. E : STATIC CHARACTERISTICS. I Conduction losses : P1 = Vto x IF(AV) + Rd x IF2(RMS) IF Rd Reverse losses : VR V IR 6/8 V to VF P2 = VR x IR x (1 - δ) STTA112U APPLICATION DATA (Cont’d) Fig. F : TURN-OFF CHARACTERISTICS. Turn-on losses : (in the transistor, due to the diode) V IL VR × IRM 2 × (3+2 × S) F 6 x dIF ⁄ dt VR × IRM × IL ×(S + 2) × F + 2 × dIF ⁄ dt P5 = TRANSISTOR I t Turn-off losses : I dI F /dt DIODE P3 = ta tb V VR × IRM 2 × × S × F 6 x dIF ⁄ dt t dI R /dt I RM VR trr = ta + tb I dIF /dt = VR /L S = tb / ta Turn-off losses : with non negligible serial inductance RECTIFIER OPERATION P3’ = ta tb V t IRM dI R /dt VR VR × IRM 2 × S × F L × IRM 2 × F + 6 x dIF ⁄ dt 2 P3, P3’ and P5 are suitable for power MOSFET and IGBT trr = ta + tb S = tb/ta Fig. G : TURN-ON CHARACTERISTICS. IF I Fmax dI F /dt 0 Turn-on losses : P4 = 0.4 (VFP - VF) x IFmax x tfr x F t VF V Fp VF 1.1V F 0 tfr t 7/8 STTA112U PACKAGE MECHANICAL DATA SMB DIMENSIONS E1 REF. D E A1 Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.159 0.181 D 3.30 3.95 0.130 0.156 L 0.75 1.60 0.030 0.063 A2 C L b FOOTPRINT DIMENSIONS (in millimeters) 2.3 1.52 2.75 1.52 Ordering type Marking Package Weight Base qty Delivery mode STTA112U T03 SMB 0.107g 2500 Tape & reel Epoxy meets UL94,V0 Band indicates cathode Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8