STTA2006P/PI TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 20A VRRM 600V trr (typ) 30ns VF (max) 1.5V K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST AND SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED PACKAGE : DOP3I Electrical insulation : 2500VRMS Capacitance < 12 pF A A K K SOD93 Isolated DOP3I STTA2006P STTA2006PI DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and efficient in Motor control freewheelapplicationsand in booster diode applications in power factor control circuitries. Packaged either in SOD93 or in DOP3I, these 600V devices are particularly intended for use on 240V domestic mains. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V VRSM Non repetitive peak reverse voltage 600 V IF(RMS) RMS forward current 50 A IFRM Repetitive peak forward current tp = 5 µs F = 5kHz square 270 A IFSM Surge non repetitive forward current tp=10 ms sinusoidal 180 A 150 °C -65 to 150 °C Tj T stg Maximum operating junction temperature Storage temperature range TM : TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 3D 1/8 STTA2006P/PI THERMAL AND POWER DATA Symbol Rth(j-c) P1 Pmax Parameter Test conditions Value Unit 1.5 2.1 °C/W Junction to case thermal resistance SOD93 DOP3I Conduction power dissipation IF(AV) = 20A δ =0.5 SOD93 DOP3I Tc= 96°C Tc= 74°C 36 W Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) SOD93 DOP3I Tc= 90°C Tc= 66°C 40 W STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR * ** Parameter Forward voltage drop Threshold voltage rd Dynamic resistance Typ Max Unit Tj = 25°C Tj = 125°C 1.25 1.75 1.5 V V VR =0.8 x VRRM Tj = 25°C Tj = 125°C 2.5 100 6 µA mA Ip < 3.IAV Tj = 125°C 1.15 V 17 mΩ Max Unit IF =20A Reverse leakage current Vto Test pulse : Test conditions Min * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr IRM S factor Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Min ns Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1A dIF/dt =-50A/µs VR =30V Tj = 125°C VR = 400V dIF/dt = -160 A/µs dIF/dt = -500 A/µs Tj = 125°C VR = 400V dIF/dt = -500 A/µs Typ 30 60 IF =20A A 12.5 17.5 / IF =20A 0.42 TURN-ON SWITCHING Symbol t fr VFp 2/8 Parameter Forward recovery time Test conditions Tj = 25°C IF =20A, dIF/dt = 160 A/µs measured at, 1.1 × VFmax Peak forward voltage Tj = 25°C IF =20A, dIF/dt = 160 A/µs Min Typ Max Unit ns 600 V 12 STTA2006P/PI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. VFM(V) P1(W) 3.50 50 MAXIMUM VALUES T 3.00 40 =0.1 = 0. 2 2.50 30 =tp/T 2.00 1.50 =1 20 1.00 =0.5 10 0 0 Tj=125 oC tp 0.50 IFM(A) IF(av)(A) 2 4 6 8 10 12 14 16 18 20 Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration. 0.00 0.1 1 10 100 200 Fig. 4: Peak reverse recovery current versus dIF/dt. IRM(A) 40.0 37.5 90% CONFIDENCE Tj=125 oC 35.0 VR=400V 32.5 IF= 40A 30.0 27.5 25.0 22.5 IF=20A 20.0 17.5 15.0 I F=10A 12.5 10.0 7.5 5.0 2.5 dIF/dt(A/ s) 0.0 0 100 200 300 400 500 600 700 800 900 1000 Fig. 5: Reverse recovery time versus dIF/dt. Fig. 6: Softness factor (tb/ta) versus dIF/dt. trr(ns) 250 90% CONFIDENCE Tj=125oC 225 VR=400V 200 175 I F=40A 150 125 IF=20A 100 75 I F= 10A 50 25 dIF/dt( A/ s) 0 0 100 200 300 400 500 600 700 800 900 1000 S factor 1.2 Typical values Tj=125 oC 1.1 1.0 IF<2xI F( av) 0.9 VR=400V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 dIF/dt(A/ s) 0.0 0 100 200 300 400 500 600 700 800 900 1000 3/8 STTA2006P/PI Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). 2.50 2.25 2.00 S factor 1.75 1.50 1.25 1.00 IRM 0.75 0.50 0 Tj(oC) 25 50 75 100 125 150 Fig. 9: Forward recovery time versus dIF/dt. tfr(ns) 600 90% CONFIDENCE Tj=125 oC 550 VFr=1.1*VF max. 500 IF=IF (av) 450 400 350 300 250 200 150 100 50 dIF/dt(A/ s) 0 0 50 100 150 200 250 300 350 400 450 500 4/8 Fig. 9: Transient peak forward voltage versus dIF/dt. VFP(V) 16 15 90% CONFIDENCE Tj=125 oC 14 IF=IF(av) 13 12 11 10 9 8 7 6 5 4 3 2 1 dIF/dt(A/ s) 0 0 50 100 150 200 250 300 350 400 STTA2006P/PI APPLICATION DATA The TURBOSWITCH is especially designed to provide the lowest overall power losses in any ”FREEWHEEL Mode” application (Fig.A) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below: TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 CONDUCTION LOSSES in the diode REVERSE LOSSES in the diode Watts SWITCHING LOSSES in the diode SWITCHING LOSSES in the tansistor due to the diode Fig. A : ”FREEWHEEL” MODE. SWITCHING TRANSISTOR DIODE: TURBOSWITCH IL VR t T F = 1/T = t/T LOAD 5/8 STTA2006P/PI APPLICATION DATA (Cont’d) Fig. B: STATIC CHARACTERISTICS Conduction losses : I P1 = Vt0 . IF(AV) + Rd . IF2(RMS) IF Rd VR V IR V tO VF Reverse losses : P2 = VR . IR . (1 - δ) Fig. C: TURN-OFF CHARACTERISTICS Turn-on losses : (in the transistor, due to the diode) V IL TRANSISTOR I VR × IRM 2 × ( 3 + 2 × S ) × F 6 x dIF ⁄ dt VR × IRM × IL × ( S + 2 ) × F + 2 x dIF ⁄ dt P5 = t I dI F /dt DIODE Turn-off losses (in the diode) : ta tb V t I RM P3 = dIR /dt VR trr = ta + tb VR × IRM 2 × S × F 6 x dIF ⁄ dt P3 and P5 are suitable for power MOSFET and IGBT S = tb / ta Fig. D: TURN-ON CHARACTERISTICS IF I Fmax dI F /dt 0 t VF V Fp VF 1.1V F 0 6/8 tfr t Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F STTA2006P/PI PACKAGE MECHANICAL DATA SOD93 REF. DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. A C 4.70 1.17 4.90 0.185 1.37 0.046 0.193 0.054 D 2.50 0.098 D1 1.27 0.050 E 0.50 0.78 0.020 0.031 F F3 1.10 1.30 0.043 0.051 G 10.80 11.10 0.425 0.437 H L 14.70 15.20 0.578 12.20 0.598 0.480 16.20 0.638 1.75 L2 L3 L5 L6 O 0.069 18.0 3.95 0.709 4.15 0.156 31.00 4.00 0.163 1.220 4.10 0.157 0.161 Cooling method : by conduction(C) Recommended torque value : 0.8 m.N Maximum torque value : 1.0 m.N 7/8 STTA2006P/PI PACKAGE DATA DOP3I ISOLATED DIMENSIONS Millimeters Inches REF. Min. Typ. Max. Min. Typ. Max. A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C D 14.35 0.5 15.60 0.565 0.7 0.020 0.614 0.028 E 2.7 2.9 0.106 0.114 F G 15.8 20.4 16.5 0.622 21.1 0.815 0.650 0.831 H 15.1 15.5 0.594 0.610 K 3.4 3.65 0.134 0.144 L 4.08 4.17 0.161 0.164 N P 10.8 1.20 11.3 0.425 1.40 0.047 0.444 0.055 R 4.60 0.181 Cooling method : by conduction (C) Recommended torque value : 0.8 m.N. Maximum torque value : 1.0 m.N. Ordering type Marking Package Weight Base qty Delivery mode STTA2006P STTA2006P SOD93 3.79g 30 Tube STTA2006PI STTA2006PI DOP3I 4.52g 30 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. 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