STTA6006P STTA12006TV1/2 TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 60A / 2 x 60A VRRM 600V trr (typ) 45ns VF (max) 1.5V K2 A2 A2 K1 K1 A1 K2 A1 STTA12006TV1 STTA12006TV2 FEATURES AND BENEFITS SPECIFICTO ”FREEWHEEL MODE”OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED PACKAGE : ISOTOP Electrical insulation : 2500VRMS Capacitance < 45 pF K A K ISOTOPTM SOD93 STTA6006P DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and efficient in motor control freewheelapplicationsand in booster diode applications in power factor control circuitries. Packaged either in ISOTOP or SOD93 these 600V devices are particularly intended for use on 240V domestic mains. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM VRSM Repetitive peak reverse voltage Non repetitive peak reverse voltage IF(RMS) RMS forward current Value Unit 600 600 V V SOD93 80 A ISOTOP 150 A tp=5µs F=5kHz square 450 A 500 150 A °C -65 to 150 °C IFRM Repetitive peak forward current IFSM Tj Surge non repetitive forward current tp=10 ms sinusoidal Maximum operating junction temperature T stg Storage temperature range TM : TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 4C 1/8 STTA12006TV1/2 / STTA6006P THERMAL AND POWER DATA (Per diode) Symbol Rth(j-c) P1 Pmax Parameter Test conditions Junction to case thermal resistance Value Unit Per diode 0.85 °C/W Total 0.47 Coupling 0.1 108 W 120 W Conduction power dissipation IF(AV) = 60A δ =0.5 SOD93 Tc= 64°C ISOTOP Tc= 58°C Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) SOD93 Tc= 54°C ISOTOP Tc= 48°C STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR * ** Parameter Forward voltage drop Threshold voltage rd Dynamic resistance Typ Max Unit Tj = 25°C Tj = 125°C 1.25 1.75 1.5 V V VR =0.8 x VRRM Tj = 25°C Tj = 125°C 5 200 12 µA mA Ip < 3.IAV Tj = 125°C 1.14 V 6 mΩ Max Unit IF =60A Reverse leakage current Vto Test pulses : Test conditions Min * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr IRM S factor Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Min ns Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125°C VR = 400V dIF/dt = -480 A/µs dIF/dt = -500 A/µs IF =60A Tj = 125°C VR = 400V dIF/dt = -500 A/µs IF =60A Typ 45 80 A 38 24 / 0.37 TURN-ON SWITCHING Symbol tfr VFp 2/8 Parameter Forward recovery time Test conditions Tj = 25°C IF =60 A, dIF/dt = 480 A/µs measured at, 1.1 × VFmax Peak forward voltage Tj = 25°C IF =60A, dIF/dt = 480 A/µs Min Typ Max Unit ns 700 V 14 STTA12006TV1/2 / STTA6006P Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. VFM(V) P1(W) 120 3.50 T =0.2 = 0 .1 80 MAXIMUM VALUES 3.00 100 = tp/T 2.50 tp Tj=125 oC 2.00 =1 60 =0.5 40 1.00 20 0 0 1.50 0.50 IF(av)(A) 5 10 15 20 25 30 35 40 45 50 55 60 Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration. IFM(A) 0.00 1 10 100 1000 Fig. 4: Peak reverse recovery current versus dIF/dt. IRM(A) 55 o 50 90% CONFIDENCE Tj=125 C 45 VR=400V IF=120A 40 35 30 I F= 60A 25 20 I F= 30A 15 10 5 dIF/dt( A/ s) 0 0 100 200 300 400 500 600 700 800 900 1000 Fig. 5: Reverse recovery time versus dIF/dt. Fig. 6: Softness factor (tb/ta) versus dIF/dt. trr(ns) 350 90% CONFIDENCE Tj=125oC 325 VR=400V 300 275 250 225 IF=120A 200 I F=60A 175 150 I F=30A 125 100 75 dIF/dt(A/ s) 50 0 100 200 300 400 500 600 700 800 900 1000 S factor 0.80 Typical values Tj=125 oC 0.75 IF<2xI F( av) 0.70 0.65 VR=400V 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 dIF/dt(A/ s) 0.20 0 100 200 300 400 500 600 700 800 900 1000 3/8 STTA12006TV1/2 / STTA6006P Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). Fig. 8: Transient peak forward voltage versus dIF/dt. 4.0 3.8 3.5 3.3 3.0 2.8 2.5 2.3 2.0 1.8 1.5 1.3 1.0 0.8 0.5 0 VFP(V) 25.0 o 22.5 90% CONFIDENCE Tj=125 C 20.0 IF =IF (av) 17.5 15.0 12.5 10.0 7.5 5.0 2.5 dIF/dt( A/ s) 0.0 0 200 400 600 800 S factor IRM Tj(oC) 25 50 75 100 125 150 Fig. 9: Forward recovery time versus dIF/dt. tfr(ns) 1000 90% CONFIDENCE Tj=125 oC 900 VFr=1.1*VF max. 800 IF=IF (av) 700 600 500 400 300 200 100 dIF/dt(A/ s) 0 0 200 400 600 800 1000 1200 4/8 1000 1200 STTA12006TV1/2 / STTA6006P APPLICATION DATA The TURBOSWITCH is especially designed to provide the lowest overall power losses in any ”FREEWHEEL Mode” application (Fig.A) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below: TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 CONDUCTION LOSSES in the diode REVERSE LOSSES in the diode Watts SWITCHING LOSSES in the diode SWITCHING LOSSES in the tansistor due to the diode Fig. A : ”FREEWHEEL” MODE. SWITCHING TRANSISTOR DIODE: TURBOSWITCH IL VR t T F = 1/T = t/T LOAD 5/8 STTA12006TV1/2 / STTA6006P APPLICATION DATA (Cont’d) Fig. B: STATIC CHARACTERISTICS Conduction losses : I P1 = Vt0 . IF(AV) + Rd . IF2(RMS) IF Rd VR V IR V tO VF Reverse losses : P2 = VR . IR . (1 - δ) Fig. C: TURN-OFF CHARACTERISTICS Turn-on losses : (in the transistor, due to the diode) V IL TRANSISTOR I VR × IRM 2 × ( 3 + 2 × S ) × F 6 x dIF ⁄ dt VR × IRM × IL × ( S + 2 ) × F + 2 x dIF ⁄ dt P5 = t I dI F /dt DIODE Turn-off losses (in the diode) : ta tb V t I RM P3 = dIR /dt VR trr = ta + tb VR × IRM 2 × S × F 6 x dIF ⁄ dt P3 and P5 are suitable for power MOSFET and IGBT S = tb / ta Fig. D: TURN-ON CHARACTERISTICS IF I Fmax dI F /dt 0 t VF V Fp VF 1.1V F 0 6/8 tfr t Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F STTA12006TV1/2 / STTA6006P PACKAGE MECHANICAL DATA SOD93 DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A C 4.70 1.17 D D1 4.90 0.185 1.37 0.046 2.50 1.27 0.193 0.054 0.098 0.050 E 0.50 0.78 0.020 0.031 F F3 1.10 1.30 0.043 0.051 G 10.80 11.10 0.425 0.437 H L 14.70 15.20 0.578 12.20 0.598 0.480 16.20 0.638 1.75 L2 L3 0.069 18.0 L5 3.95 L6 O 4.00 0.709 4.15 0.156 31.00 0.163 1.220 4.10 0.157 0.161 Cooling method : by conduction (C) Recommended torque value : 0.8 m.N Maximum torque value : 1m.N 7/8 STTA12006TV1/2 / STTA6006P PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. Millimeters Min. Max. Inches Min. Max. A 11.80 12.20 0.465 0.480 A1 B 8.90 7.8 9.10 8.20 0.350 0.307 0.358 0.323 C 0.75 0.85 0.030 0.033 C2 D 1.95 37.80 2.05 38.20 0.077 1.488 0.081 1.504 D1 31.50 31.70 1.240 1.248 E E1 25.15 23.85 25.50 24.15 0.990 0.939 1.004 0.951 E2 G 24.80 typ. 14.90 15.10 0.976 typ. 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 F 3.50 4.10 4.30 4.30 0.138 0.161 0.169 0.169 F1 4.60 5.00 0.181 0.197 P P1 4.00 4.00 4.30 4.40 0.157 0.157 0.69 0.173 S 30.10 30.30 1.185 1.193 Cooling method : by conduction (C) Ordering type Marking Package Weight Base qty Delivery mode STTA6006P STTA6006P SOD93 3.79g 30 Tube ISOTOP ISOTOP 27g without screws 10 10 Tube Tube STTA12006TV1 STTA12006TV1 STTA12006TV2 STTA12006TV2 Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8