STTA2512P STTA5012TV1/2 TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 25A VRRM 1200V trr (typ) 60ns VF (max) K2 A2 K1 A1 STTA5012TV1 1.9V A2 K1 K2 A1 STTA5012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY. LOW INDUCTANCE PACKAGE < 5 nH. INSULATED PACKAGE : ISOTOPTM Electrical insulation : 2500VRMS Capacitance : < 45pF. K ISOTOPTM A K SOD93 STTA2512P DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode operations. They are particularly suitable in Motor Control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current Value Unit 1200 V 50 A IFRM Repetitive peak forward current tp = 5 µs F = 5kHz square 300 A IFSM Surge non repetitive forward current tp = 10ms sinusoidal 210 A T stg Storage temperature range - 65 to + 150 °C 150 °C Tj Maximum operating junction temperature ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics. November 1999 - Ed: 4B 1/9 STTA2512P / STTA5012TV1/2 THERMAL AND POWER DATA (per diode) Symbol Rth(j-c) Rth(c) P1 Pmax Parameter Junction to case thermal resistance Conditions Per diode Value 1.4 Unit °C/W ISOTOP ISOTOP SOD93 Total 0.75 1.2 Coupling thermal resistance ISOTOP Coupling 0.1 °C/W Conduction power dissipation IF(AV) = 25A δ =0.5 ISOTOP SOD93 Tc= 70°C Tc= 82°C 57 W Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) ISOTOP Tc= 62°C 62.5 W SOD93 Tc= 75°C STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * IR ** Vto Rd Test pulses : Parameter Test conditions Forward voltage drop IF =25A Reverse leakage current Threshold voltage VR =0.8 x VRRM Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Ip < 3.IF(AV) Tj = 125°C Min Typ 1.3 2.0 Dynamic resistance Max Unit 2.1 1.9 150 8 V V µA mA 1.52 V 15 mΩ Max Unit * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x I F2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS (per diode) TURN-OFF SWITCHING Symbol trr IRM S factor Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Min Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125°C VR = 600V dIF/dt = -200 A/µs dIF/dt = -500 A/µs Tj = 125°C VR = 600V dIF/dt = -500 A/µs Typ ns 60 110 IF =25A A 35 45 IF =25A / 1.2 TURN-ON SWITCHING Symbol tfr VFp 2/9 Parameter Forward recovery time Peak forward voltage Test conditions Min Typ Max Tj = 25°C IF =25 A, dIF/dt = 200 A/µs measured at 1.1 × VFmax 900 Tj = 25°C IF =25A, dIF/dt = 200 A/µs IF =40A, dIF/dt = 500 A/µs 30 Unit ns V 35 STTA2512P / STTA5012TV1/2 Fig. 1: Conduction losses versus average current (per diode). Fig. 2: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) P1(W) 60 δ = 0.1 δ = 0.2 300 δ = 0.5 Tj=125°C 50 100 40 δ=1 30 10 20 T 10 δ=tp/T IF(av) (A) 0 0 5 10 15 20 VFM(V) tp 25 30 Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (ISOTOP). 1 0.0 Zth(j-c)/Rth(j-c) 0.8 0.8 0.6 2.0 2.5 3.0 3.5 4.0 0.6 δ = 0.5 δ = 0.5 0.4 0.4 δ = 0.2 δ = 0.2 0.2 δ = 0.1 Single pulse 0.0 1E-3 δ = 0.1 tp(s) 1E-2 1E-1 1E+0 5E+0 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode). 0.0 1E-4 tp(s) Single pulse 1E-3 1E-2 1E-1 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). IRM(A) trr(ns) VR=600V Tj=125°C IF=IF(av) IF=2*IF(av) IF=0.5*IF(av) dIF/dt(A/µs) 0 1.5 Zth(j-c)/Rth(j-c) 1.0 55 50 45 40 35 30 25 20 15 10 5 0 1.0 Fig. 3-2: Relative variation of thermal impedance junction to case versus pulse duration (SOD93). 1.0 0.2 0.5 100 200 300 400 500 500 450 400 350 300 250 200 150 100 50 0 VR=600V Tj=125°C IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) dIF/dt(A/µs) 0 100 200 300 400 500 3/9 STTA2512P / STTA5012TV1/2 Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values, per diode). S factor Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). 1.1 1.60 Tj=125°C IF<2*IF(av) VR=600V 1.0 S factor 1.40 0.9 1.20 IRM 0.8 1.00 Tj(°C) 0.80 dIF/dt(A/µs) 0 100 200 300 400 500 Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence, per diode). 0.7 25 75 100 125 Fig. 9: Forward recovery time versus dIF/dt (90% confidence, per diode). tfr(ns) VFP(V) 1400 60 Tj=125°C IF=IF(av) 50 1200 40 1000 Tj=125°C VFR=1.1*VF max. IF=IF(av) 800 30 600 20 400 10 dIF/dt(A/µs) 0 50 0 4/9 100 200 300 dIF/dt(A/µs) 200 400 500 0 100 200 300 400 500 STTA2512P / STTA5012TV1/2 APPLICATION DATA The 1200V TURBOSWITCH series has been designed to provide the lowest overall power losses in all high frequency or high pulsed current operations. In such applications (Fig A to D),the way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 CONDUCTION LOSSES in the diode REVERSE LOSSES in the diode Watts SWITCHING LOSSES in the diode SWITCHING LOSSES in the tansistor due to the diode Fig. A : ”FREEWHEEL” MODE. SWITCHING TRANSISTOR DIODE: TURBOSWITCH IL VR tp T F = 1/T δ = tp/T LOAD 5/9 STTA2512P / STTA5012TV1/2 Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE. PWM tp T F = 1/T δ = tp/T Fig. D : RECTIFIER DIODE. STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES . Fig. E: STATIC CHARACTERISTICS Conduction losses : I P1 = Vto . IF(AV) + Rd . IF2(RMS) IF Max values at 125°C,suitable for Ipeak < 3.IF(av) Rd Reverse losses : VR V IR 6/9 V to VF P2 = VR . IR . (1 - δ) STTA2512P / STTA5012TV1/2 APPLICATION DATA (Cont’d) Fig. F: TURN-OFF CHARACTERISTICS Turn-on losses : (in the transistor, due to the diode) V IL VR × IRM 2 × ( 3 + 2 × S ) × F 6 x dIF ⁄ dt VR × IRM × IL × ( S + 2 ) × F + 2 x dIF ⁄ dt TRANSISTOR I P5 = t I dI F /dt DIODE Turn-off losses (in the diode) : ta tb V t P3 = dI R /dt I RM VR × IRM 2 × S × F 6 x dIF ⁄ dt VR trr = ta + tb I dI F /dt = VR /L S = tb / ta RECTIFIER OPERATION Turn-off losses : (with non negligible serial inductance) ta tb V t IRM dI R /dt VR P3’ = VR × IRM 2 × S × F + 6 x dIF ⁄ dt L × IRM 2 × F 2 P3,P3’ and P5 are suitable for powerMOSFET and IGBT trr = ta + tb S = tb/ta Fig. G: TURN-ON CHARACTERISTICS IF I Fmax dI F /dt 0 t VF Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F V Fp VF 1.1V F 0 tfr t 7/9 STTA2512P / STTA5012TV1/2 PACKAGE MECHANICAL DATA ISOTOP REF. Min. Max. Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B C 7.8 0.75 8.20 0.85 0.307 0.030 0.323 0.033 C2 1.95 2.05 0.077 0.081 D D1 37.80 31.50 38.20 31.70 1.488 1.240 1.504 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 E2 8/9 DIMENSIONS Millimeters Inches 24.80 typ. 0.976 typ. G G1 14.90 12.60 15.10 12.80 0.587 0.496 0.594 0.504 G2 3.50 4.30 0.138 0.169 F F1 4.10 4.60 4.30 5.00 0.161 0.181 0.169 0.197 P 4.00 4.30 0.157 0.69 P1 S 4.00 30.10 4.40 30.30 0.157 1.185 0.173 1.193 STTA2512P / STTA5012TV1/2 PACKAGE MECHANICAL DATA SOD93 DIMENSIONS REF. Millimeters A Min. Typ. Max. Min. Typ. Max. 4.70 4.90 0.185 0.193 C 1.17 D D1 E 0.50 F 1.10 G H 0.054 0.098 0.050 0.78 0.020 0.031 1.30 0.043 1.75 10.80 14.70 0.051 0.069 11.10 0.425 15.20 0.578 0.437 0.598 L 12.20 0.480 L2 L3 16.20 0.638 L5 18.0 3.95 L6 O 0.709 4.15 0.156 31.00 4.00 0.163 1.220 4.10 0.157 0.161 Package Weight Base qty Delivery mode STTA5012TV1 STTA5012TV1 ISOTOP 10 Tube STTA5012TV2 STTA5012TV2 ISOTOP 27g. without screws 10 Tube SOD93 3.79g. 30 Tube STTA2512P Marking 1.37 0.046 2.50 1.27 F3 Ordering type Inches STTA2512P Cooling method: by conduction(C) ISOTOP recommended torque value: 1.3 N.m. (MAX 1.5 N.m.) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws for terminals). ISOTOP: the screws supplied with the package are suitable for mounting on a board with a thickness of 0.6 mm min and 2.2 mm max. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of thirdparties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. 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