STTA306B ® TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM 600 V trr (typ) 20 ns VF (max) 1.65 V K FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST, AND SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. A NC DPAK DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes. TURBOSWITCH family drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all freewheel mode operations and is particulary suitable and efficient in motor control freewheel applications and in booster diode applications in Power Factor Control circuitries. Packaged in DPAK, these 600V devices are particularly intended for use on 240V domestic mains. ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current tp=5 µs F=5 kHz square Value Unit 600 V 6 A 20 A IFRM Repetitive peak forward current IFSM Surge non repetitive forward current tp=10 ms sinusoidal 35 A Maximum operating junction temperature 125 °C - 65 to + 150 °C Tj Tstg Storage temperature range TM : TURBOSWITCH is a trademark from STMicroelectronics November 1999 - Ed: 3C 1/8 STTA306B THERMAL AND POWER DATA Symbol Rth (j-c) P1 Pmax Parameter Tests conditions Value Unit 6 °C/W Junction to case Conduction power dissipation IF(AV) = 1.5A, δ = 0.5 Tc = 110°C 2.5 W Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tc = 108°C 2.8 W STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter VF ** Forward voltage drop Tests conditions Tj = 25°C IF = 3 A Tj = 125°C IF = 3 A Reverse leakage current Tj = 25°C VR = 0.8 X VRRM Vto Threshold voltage Ip < 3.IF(AV) Rd Dynamic resistance IR * Test pulse : Min. Tj = 125°C Typ. 1.3 Unit 1.85 V 1.65 µA 20 500 Tj = 125°C Max. 1200 1.15 V 175 mΩ * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol Parameter Tj = 25°C trr IRM S factor Test conditions Maximum reverse recovery current Softness factor Tj = 125°C Tj = 125°C IF=0.5A IR=1A Irr=0.25A IF=1A dIF/dt= -50A/µs VR=30V IF=3A VR=400V dIF/dt = -16A/µs dIF/dt = -50A/µs IF=3A VR=400V dIF/dt = -50A/µs Min. Typ. Max. Unit 20 ns 50 A 1.2 2.0 1.1 - TURN-ON SWITCHING Symbol tfr VFP 2/8 Parameter Forward recovery time Peak forward voltage Test conditions Min. Typ. Max. Unit Tj = 25°C IF=3A dIF/dt = 16A/µs Measured at 1.1 x VFmax 500 ns Tj = 25°C IF=2A dIF/dt = 16A/µs 10 V STTA306B Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values). P1(W) IFM(A) 3.0 5E+1 δ = 0.1 2.5 δ = 0.2 δ = 0.5 δ = 0.05 1E+1 Tj=125°C 2.0 Tj=25°C δ=1 1E+0 1.5 1.0 1E-1 0.5 VFM(V) IF(av) (A) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Fig. 3: Relative variation of thermal transient impedance junction to ambient versus pulse duration (recommended pad layout). 1E+0 1E-2 0.0 9 1.5 2.5 3.0 3.5 VR=400V Tj=125°C 7 1E-1 2.0 IRM(A) 8 δ = 0.2 1.0 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). Zth(j-a) (°C/W) δ = 0.5 0.5 IF=2*IF(av) 6 δ = 0.1 5 IF=IF(av) 4 3 1E-2 Single pulse 2 T 1 tp(s) 1E-3 1E-3 1E-2 1E-1 1E+0 δ=tp/T 1E+1 tp 0 dIF/dt(A/µs) 0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). 1.6 VR=400V Tj=125°C 60 80 100 120 140 160 180 200 S factor IF<2*IF(av) VR=400V Tj=125°C 1.4 1.2 250 1.0 200 IF=2*IF(av) 150 0.8 0.6 100 IF=IF(av) 50 0 40 Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values). trr(ns) 350 300 20 1E+2 5E+2 dIF/dt(A/µs) 0.4 0.2 0 20 40 60 80 100 120 140 160 180 200 dIF/dt(A/µs) 0 20 40 60 80 100 120 140 160 180 200 3/8 STTA306B Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence). VFP(V) 1.1 1.0 S factor 0.9 IRM 0.8 Tj(°C) 0.7 25 50 75 100 125 Fig. 9: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 24 22 20 18 16 14 12 10 8 6 4 2 0 dIF/dt(A/µs) 0 20 40 60 80 100 120 140 160 180 200 Fig. 10: Junction capacitance versus reverse voltage applied (typical values). 10 300 IF=IF(av) Tj=125°C C(pF) F=1MHz IF=IF(av) VFR=1.1*VF max. Tj=125°C 250 5 200 150 100 2 50 dIF/dt(A/µs) 0 4/8 0 20 40 60 80 100 120 140 160 180 200 VR(V) 1 1 10 100 200 STTA306B APPLICATION DATA The TURBOSWITCHTM is especially designed to provide the lowest overall power losses in any Freewheel Mode application (see fig. A) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 REVERSE LOSSES in the diode CONDUCTION LOSSES in the diode Watts SWITCHING LOSSES in the diode SWITCHING LOSSES in the transistor due to the diode Fig. A : "FREEWHEEL" MODE SWITCHING TRANSISTOR DIODE: TURBOSWITCH IL VR tp T F = 1/T δ = tp/T LOAD 5/8 STTA306B APPLICATION DATA (Cont’d) Fig. B : STATIC CHARACTERISTICS Conduction losses : I P1 = Vto x IF(AV) + Rd x IF2(RMS) IF Rd VR Reverse losses : V IR P2 = VR x IR x (1 - δ) VF V to Fig. C : TURN-OFF CHARACTERISTICS Turn-on losses : (in the transistor, due to the diode) V IL VR × IRM 2 × (3 + 2 × S) × F 6 x dIF ⁄ dt VR × IRM × IL × (S + 2) × F + 2 × dIF ⁄ dt TRANSISTOR I P5 = t I dI F /dt DIODE ta tb V t dI R /dt I RM VR trr = ta + tb I dIF /dt = VR /L S = tb / ta RECTIFIER OPERATION Turn-off losses (in the diode) : ta tb V t IRM P3 = dI R /dt VR × IRM 2 × S × F 6 x dIF ⁄ dt VR trr = ta + tb S = tb/ta 6/8 P3 and P5 are suitable for power MOSFET and IGBT STTA306B APPLICATION DATA (Cont’d) Fig. D : TURN-ON CHARACTERISTICS IF I Fmax dI F /dt Turn-on losses : P4 = 0.4 (VFP - VF) x IFmax x tfr x F 0 t VF V Fp VF 1.1V F 0 tfr t 7/8 STTA306B PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. Millimeters Min. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0° 8° Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0° 8° FOOTPRINT DIMENSIONS (in millimeters) 6.7 6.7 3 3 1.6 1.6 2.3 Ordering type 2.3 Marking STTA306B A306 STTA306B-TR A306 Epoxy meets UL94,V0 Package Weight Base qty Delivery mode DPAK DPAK 0.3 g. 0.3 g. 75 2500 Tube Tape & reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8