STTH6003TV/CW HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF(AV) 2 x 30 A VRRM 300 V VF (max) 1V trr (max) 55 ns A1 K1 A1 A2 K2 A2 K K1 A1 FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY INSULATED PACKAGE: ISOTOP Insulation voltage: 2500 VRMS Capacitance: < 45 pF LOW INDUCTANCE AND LOW CAPACITANCE ALLOW SIMPLIFIED LAYOUT DESCRIPTION Dual rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged either in ISOTOP or in TO-247, this device is intended for use in low voltage, high K2 A2 K A2 ISOTOP STTH6003TV A1 TO-247 STTH6003CW frequency inverters, free wheeling operation, welding equipments and telecom power supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current RMS forward current Average forward current ISOTOP TO-247 IFSM Surge non repetitive forward current. IRSM Tstg ISOTOP TO-247 Non repetitive peak reverse current Storage temperature range Tj Maximum operating junction temperature ISOTOP TO-247 Tc = 95°C Per diode δ = 0.5 Per device Tc =135°C Per diode δ = 0.5 Per device tp = 10 ms sinusoidal tp = 10 ms sinusoidal tp =100 µs square ISOTOP TO-247 ISOTOP TO-247 Value 300 100 60 30 60 Unit V A A A 30 60 A 400 300 4 - 55 to + 150 - 65 to + 175 150 175 A A A °C °C °C °C ISOTOP is a registered trademark of STMicroelectronics October 1999 - Ed: 5C 1/6 STTH6003TV/CW THERMAL RESISTANCES Symbol Rth (j-c) Parameter ISOTOP Junction to case TO-247 Rth (c) Value 1.4 0.75 Per diode Total Per diode Total Coupling Unit °C/W 1 0.55 0.1 When the diodes 1 and 2 are used simultaneously: ∆Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Tests conditions Reverse leakage current VR = 300 V Forward voltage drop IF = 30 A Min. Typ. Tj = 25°C 60 Tj = 125°C Max. Unit 60 µA 600 1.25 Tj = 25°C Tj = 125°C V 0.85 1 Typ. Max. Unit 40 ns Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation: P = 0.75 x IF(AV) + 0.008 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tests conditions IF = 0.5 A IF = 1 A tfr VFP Sfactor IRM 2/6 Irr = 0.25 A IR = 1A dIF/dt = - 50 A/µs VR = 30 V IF = 30 A dIF/dt = 200 A/µs Min. Tj = 25°C 55 Tj = 25°C VFR = 1.1 x VF max. Vcc = 200 V dIF/dt = 200 A/µs IF = 30 A Tj = 125°C 350 ns 5 V 0.3 11 A STTH6003TV/CW Fig. 1: Conduction losses versus average current (per diode). Fig. 2: Forward voltage drop versus forward current (maximum values, per diode). P1(W) IFM(A) 40 δ = 0.1 δ = 0.2 35 Tj=125°C Typical values δ = 0.5 δ = 0.05 100 30 δ=1 Tj=125°C Maximum values 25 20 10 15 10 T 5 Tj=25°C Maximum values 40 VFM(V) 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Fig. 3a: Relative variation of thermal impedance junction to case versus pulse duration (ISOTOP). Fig. 3b: Relative variation of thermal impedance junction to case versus pulse duration (TO-247). 0 IF(av) (A) 0 5 10 15 20 δ=tp/T 25 30 tp 35 Zth(j-c)/Rth(j-c) Zth(j-c)/Rth(j-c) 1.0 1.0 0.8 0.8 δ = 0.5 0.6 0.4 0.6 0.4 δ = 0.2 δ = 0.1 δ = 0.2 T δ = 0.1 T 0.2 0.2 Single pulse Single pulse 0.0 1E-3 tp(s) 1E-2 1E-1 δ=tp/T 1E+0 tp 1E+1 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence,per diode). 0.0 1E-4 1E-3 1E-2 δ=tp/T 1E-1 tp 1E+0 trr(ns) VR=200V Tj=125 °C IF=2*IF(a v) IF=IF(av) IF=0.5*IF(av) dIF/dt(A/µs) 0 tp(s) Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). IRM(A) 22 20 18 16 14 12 10 8 6 4 2 0 δ = 0.5 50 100 150 200 250 300 350 400 450 500 180 160 140 120 VR=200V Tj=125 °C IF=2*IF(av) 100 80 60 40 20 0 IF=IF(av) IF=0.5*IF(av) dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 3/6 STTH6003TV/CW Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values, per diode). S factor 0.6 VR=200V Tj=125 °C 0.5 0.4 0.3 0.2 0.1 dIF/dt(A/µs) 0.0 0 50 100 150 200 250 300 350 400 450 500 Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence,per diode). Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125°C). 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 IRM Tj(°C) 50 75 100 125 Fig. 9: Forward recovery time versus dIF/dt (90% confidence, per diode). tfr(ns) VFP(V) 500 10 IF=IF(av) Tj=125 °C 8 400 6 300 4 200 2 100 0 S factor IF=IF(av) VFR=1.1*VFmax Tj=125 °C dIF/dt(A/µs) dIF/dt(A/µs) 0 4/6 50 100 150 200 250 300 350 400 450 500 0 0 50 100 150 200 250 300 350 400 450 500 STTH6003TV/CW PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. Millimeters Inches A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 5/6 STTH6003TV/CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS REF. V Millimeters Min. Dia. V A H L5 L L2 L4 F2 F1 L1 F3 V2 F4 D L3 F(x3) M G = Ordering code STTH6006TV1 E = Marking STTH6006TV Package ISOTOP STTH6006CW STTH6006CW TO-247 Cooling method: by conduction(C) Recommended torque value (ISOTOP): 1.3 N.m. Recommended torque value (TO-247°: 0.8 N.m. Maximum torque value (ISOTOP): 1.5 N.m. Maximum torque value (TO-247): 1.0 N.m. Epoxy meets UL 94,V0 Inches Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 0.203 0.102 0.031 0.055 Weight 27g without screws 4.36g Base qty 10 with screws 30 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 Delivery mode Tube Tube Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6