STPS6045CP/CPI/CW POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) 2x30 A VRRM Tj (max) 45 V 175 °C VF (max) 0.63 V K A2 A2 K A1 Insulated TOP-3I STPS6045CPI FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREME FAST SWITCHING LOW THERMAL RESISTANCE INSULATED PACKAGE: TOP-3I Insulating voltage = 2500VRMS Capacitance = 12pF A2 A2 DESCRIPTION A1 Dual center tap Schottky rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged either in SOT-93, TOP-3I or TO-247, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protectionapplications. K K SOT-93 STPS6045CP A1 TO-247 STPS6045CW ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Repetitive peak reverse voltage RMS forward current Average forward current δ = 0.5 Unit V 60 A A Tc = 150°C Per diode 30 TOP-3I Tc = 130°C Per device tp = 10 ms sinusoidal 60 Surge non repetitive forward current Repetitive Peak reverse current tp = 2 µs square F = 1kHz IRSM Non repetitive peak reverse current Storage temperature range tp = 100 µs square dV/dt Value 45 SOT-93 TO-247 IFSM IRRM Tstg Tj * : Parameter Maximum operating junction temperature * Critical rate of rise of reverse voltage 400 1 A A 3 A - 65 to + 175 175 °C °C 10000 V/µs 1 dPtot thermal runaway condition for a diode on its own heatsink < dTj Rth(j−a) June 1999 - Ed:5B 1/5 STPS6045CP/CPI/CW THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case Rth (c) Value Unit °C/W SOT-93 / TO-247 Per diode Total 0.95 0.55 TOP-3I Per diode Total 1.8 1.1 SOT-93 / TO-247 TOP-3I Coupling 0.15 0.4 When the diodes 1 and 2 are used simultaneously: ∆ TJ(diode 1) = P(diode1)x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Tests Conditions Reverse leakage current VF * Min. Max. Unit 500 µA 20 80 mA 0.53 0.63 V VR = VRRM Tj = 25°C Tj = 125°C Forward voltage drop Typ. Tj = 125°C IF = 30 A Tj = 25°C IF = 60 A Tj = 125°C IF = 60 A 0.84 0.68 0.78 Pulse test : ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.48 x IF(AV) + 0.005 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average current versus ambient temperature (δ=0.5, per diode). IF(av)(A) PF(av)(W) 25 δ = 0.05 δ = 0.1 δ = 0.2 35 δ = 0.5 20 δ=1 25 15 TOP-3I 20 Rth(j-a)=10°C/W 15 10 10 T 5 T 5 δ=tp/T IF(av) (A) 0 SOT-93 TO-247 Rth(j-a)=Rth(j-c) 30 0 2/5 5 10 15 20 25 30 δ=tp/T tp 0 35 40 0 25 Tamb(°C) tp 50 75 100 125 150 175 STPS6045CP/CPI/CW Fig. 3-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (SOT-93 and TO-247). Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TOP-3I). IM(A) IM(A) 350 250 300 200 250 150 200 Tc=75°C 150 Tc=75°C Tc=100°C 100 Tc=100°C Tc=125°C 100 IM 50 IM 50 t t(s) δ=0.5 0 1E-3 Tc=125°C t t(s) δ=0.5 1E-2 1E-1 1E+0 Fig. 4: Relative variation of thermal transient impedance junction to case versus pulse duration. 0 1E-3 1E-2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(µA) Zth(j-c)/Rth(j-c) 1E+5 1.0 Tj=150°C 1E+4 0.8 Tj=125°C Tj=100°C 1E+3 δ = 0.5 0.6 0.4 T δ = 0.2 0.2 δ = 0.1 Single pulse δ=tp/T tp(s) 0.0 1E-4 1E-3 1E-2 1E-1 tp 1E+2 Tj=50°C 1E+1 Tj=25°C 1E+0 1E+0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). Tj=75°C 0 5 10 15 20 25 VR(V) 30 35 40 45 Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) C(nF) 5.0 200 F=1MHz Tj=25°C 100 Typical values Tj=125°C Tj=25°C 1.0 10 VR(V) 0.1 1 2 5 10 20 50 1 0.0 Tj=125°C VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 3/5 STPS6045CP/CPI/CW PACKAGE MECHANICAL DATA SOT-93 DIMENSIONS Millimeters Inches REF. A C D D1 E F F3 F4 G H L L2 L3 L5 L6 O Min. 4.70 1.90 0.50 1.10 10.80 14.70 3.95 4.00 Typ. Max. 4.90 2.10 2.50 2.00 0.78 1.30 1.75 2.10 11.10 15.20 12.20 16.20 18.0 4.15 31.00 4.10 Min. Typ. Max. 1.185 0.193 0.075 0.083 0.098 0.078 0.020 0.031 0.043 0.051 0.069 0.083 0.425 0.437 0.279 0.598 0.480 0.638 0.709 0.156 0.163 1.220 0.157 0.161 PACKAGE MECHANICAL DATA TOP-3I (isolated) DIMENSIONS REF. Millimeters Min. A B C D E F G H J K L P R 4/5 Typ. 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 5.4 3.4 4.08 1.20 4.60 Inches Max. Min. 4.6 1.55 15.60 0.7 2.9 16.5 21.1 15.5 5.65 3.65 4.17 1.40 0.173 0.057 0.565 0.020 0.106 0.622 0.815 0.594 0.213 0.134 0.161 0.047 Typ. Max. 0.181 0.061 0.614 0.028 0.114 0.650 0.831 0.610 0.222 0.144 0.164 0.055 0.181 STPS6045CP/CPI/CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS V REF. Dia. V A H L5 L L2 L4 F2 F1 L1 F3 V2 F4 D L3 F(x3) M G = E Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133 G 10.90 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. 3.55 3.65 0.139 0.143 = Type Marking Package Weight Base qty Delivery mode STPS6045CP STPS6045CP SOT-93 3.97 g. 30 Tube STPS6045CPI STPS6045CPI TOP-3I 4.46 g. 30 Tube STPS6045CW STPS6045CW TO-247 4.36 g. 30 Tube Cooling method: by conduction (C) Recommended torque value: 0.8 N.m. Maximum torque value: 1.0 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. 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