THBTxxx11D ® Application Specific Discretes A.S.D .™ TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE FEATURES n n n n n BIDIRECTIONAL CROWBAR PROTECTION BETWEEN TIP AND GND, RING AND GND AND BETWEEN TIP AND RING. PEAK PULSE CURRENT : IPP = 30A for 10/1000µs surge. HOLDING CURRENT : IH = 150mA. AVAILABLE IN SO8 PACKAGES. LOW DYNAMIC BREAKOVER VOLTAGE. DESCRIPTION SO-8 Dedicated to telecommunication equipment protection, these devices provide a triple bidirectional protection function. They ensure the same protection capability with the same breakdown voltage both in longitudinal mode and transversal mode. A particular attention has been given to the internal wire bonding. The “4-point” configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages. Dynamic characteristics have been defined for several types of surges, in order to meet the SLIC maximum ratings. COMPLIES WITH BELLCORE STANDARDS : TR-NWT-001089: 10/1000µs 2/10µs 2/10µs SCHEMATIC DIAGRAM TIP 1 8 TIP GND 2 7 GND GND 3 6 GND RING 4 5 RING 1000V 2500V (first level) 5000V (second level) with line series resistors of 56Ω TM: ASD is trademarks of STMicroelectronics. October 2003 - Ed: 7A 1/9 THBTxxx11D ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter Value Unit IPP Peak pulse current (see note 1) 10/1000 µs 30 A ITSM Non repetitive surge peak on-state current (F=50Hz) tp = 10 ms t = 1s 8 3.5 A Tstg Tj Storage temperature range Maximum operating junction temperature - 40 to + 150 + 150 °C °C TL Maximum lead temperature for soldering during 10s 260 °C Note 1 : Pulse waveform : 10/1000µs tr=10µs tp=1000µs % I PP 100 50 0 tr t tp TEST CIRCUITS FOR IPP Longitudinal mode TIP See test circuit 3 IPP/2 RP IPP/2 RP RING THBT GND Transversal mode TIP or RING I PP RP THBT See test circuit 3 GND THERMAL RESISTANCES Symbol Rth (j-a) 2/9 Parameter Junction to ambient Value Unit 170 °C/W THBTxxx11D ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol I Parameter IPP VRM Stand-off voltage IRM Leakage current at stand-off voltage VR Continuous Reverse voltage VBR Breakdown voltage IBO IH V IR VRM VBR VBO Breakover voltage VBO IH Holding current IBO Breakover current VF Forward voltage drop IPP Peak pulse current C Capacitance STATIC PARAMETERS Type IR @ VR IRM @ VRM max. VBO @ max. note 1 IBO IH C max. note 2 min. max. min note 3 max note 4 µA V µA V V mA mA mA pF THBT15011D 5 135 50 150 210 50 400 150 80 THBT16011D 5 135 50 160 230 50 400 150 80 THBT20011D 5 180 50 200 290 50 400 150 80 THBT27011D 5 240 50 270 380 50 400 150 80 Note 1: Note 2: Note 3: Note 4: IR mesuared at VR guarantees VBR > VR Measured at 50 Hz (1 cycle) test circuit 1. See the reference test circuit 2. VR = 1V, F = 1MHz. DYNAMIC BREAKOVER VOLTAGES (Transversal mode) Type Symbol THBT15011D VBO 10/700µs 1.2/50µs 2/10µs 1.5kV 1.5kV 2.5kV Rp=10Ω Rp=10Ω Rp=62Ω THBT16011D VBO 10/700µs 1.2/50µs 2/10µs 1.5kV 1.5kV 2.5kV THBT20011D VBO 10/700µs 1.2/50µs 2/10µs THBT27011D VBO 10/700µs 1.2/50µs 2/10µs Note 5 : Test conditions (see note 5) Maximum Unit IPP=30A IPP=30A IPP=38A 190 190 200 V Rp=10Ω Rp=10Ω Rp=62Ω IPP=30A IPP=30A IPP=38A 200 200 210 V 1.5kV 1.5kV 2.5kV Rp=10Ω Rp=10Ω Rp=62Ω IPP=30A IPP=30A IPP=38A 270 270 280 V 1.5kV 1.5kV 2.5kV Rp=10Ω Rp=10Ω Rp=62Ω IPP=30A IPP=30A IPP=38A 360 360 400 V See test circuit 3 for VBO dynamic parameters; Rp is the protection resistor located on the line card. 3/9 THBTxxx11D TEST CIRCUIT 1 for IBO and VBO parameters : tp = 20ms Auto Transformer 220V/2A R1 static relay. 140 R2 240 K 220V Vout D.U.T IBO measure V BO measure Transformer 220V/800V 5A TEST PROCEDURE : n Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. n VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. TEST CIRCUIT 2 for IH parameter. R - VP D.U.T. VBAT = - 48 V Surge generator This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : n 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max. 4/9 THBTxxx11D TEST CIRCUIT 3 for IPP and VBO parameters : R4 (VP is defined in no load condition) TIP L R2 RING R3 VP R1 C1 C2 G ND Pulse (µs) Vp C1 C2 L R1 R2 R3 R4 IPP Rp tr tp (V) (µF) (nF) (µH) (Ω) (Ω) (Ω) (Ω) (A) (Ω) 10 700 1500 20 200 0 50 15 25 25 30 10 1.2 50 1500 1 33 0 76 13 25 25 30 10 2 10 2500 10 0 1.1 1.3 0 3 3 38 62 5/9 THBTxxx11D Fig. 1: Surge peak current versus overload duration. ITSM(A) 10 F=50Hz Tj initial=25°C 9 8 7 6 5 4 3 2 1 0 1E-2 t(s) 1E-1 1E+0 1E+1 1E+2 1E+3 APPLICATION NOTE 1 Connect pins 2, 3, 6 and 7 to Ground in order to guarantee a good surge current capability for long duration disturbances. 2 In order to take advantage of the" 4-point “ structure of the THBT, the TIP and RING lines have to cross the device. In this case, the device will eliminate the overvoltages generated by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients. 6/9 TIP 1 2 8 TIP 7 GND GND 3 RING 4 6 5 RING THBTxxx11D APPLICATION CIRCUIT : 1 - Line card protection RING GENERATOR - VBAT PTC LINE A T E S T RING RELAY R SLIC E L 220 nF A Y S LINE B THBTxxxD LCP1511D PTC 2 - Protection for telephone set with ground key HOOK LA SPEECH DIALING RINGER LB THBTxxxD E GROUND KEY 7/9 THBTxxx11D ORDER CODE THBT 150 1 1 D RL PACKAGING: RL = tape and reel. = tube. BIDIRECTIONAL TRISIL LOW DYNAMIC CHARACTERISTICS. BREAKDOWN VOLTAGE VERSION MARKING Types Package Marking THBT15011D SO-8 BT151D THBT16011D SO-8 BT161D THBT20011D SO-8 BT201D THBT27011D SO-8 BT271D MARKING : Logo, Date Code, Part Number. 8/9 PACKAGE: 1 = SO8 Plastic. THBTxxx11D PACKAGE MECHANICAL DATA. SO-8 Plastic DIMENSIONS REF. Millimetres Min. L Inches Typ. Max. Min. Typ. Max. c1 A C a3 a2 A e b a1 S E e3 D b1 a1 0.1 a2 0.069 0.25 0.004 0.010 1.65 0.065 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 C M 1.75 0.50 0.020 c1 8 5 F 1 4 45° (typ) D 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.15 0.157 L 0.4 1.27 0.016 0.050 0.6 0.024 M FOOT PRINT DIMENSIONS (in millimeters) 6.8 S 8° (max) Packaging : Products supplied in antistatic tubes or tape and reel. 0.6 Weight : 0.077 g. 4.2 1.27 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics - All rights reserved. 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