THBT7011D Application Specific Discretes A.S.D. DUAL OVERVOLTAGE PROTECTION FOR TELECOM LINE FEATURES BIDIRECTIONAL CROWBAR PROTECTION. PEAK PULSE CURRENT : IPP = 30A for 10/1000µs surge. HOLDING CURRENT : IH = 150mA. BREAKDOWN VOLTAGE: 70V Min. LOW DYNAMIC BREAKOVER VOLTAGE. SO-8 DESCRIPTION Dedicated to telecommunication equipment protection,this device provides a dual bidirectional protectionfunction. FUNCTIONAL DIAGRAM T Dynamic characteristics have been defined for several types of surges, in order to meet the SLIC maximum ratings. R G PINOUT CONFIGURATION T G NC G NC G R G TM: ASD is trademarks of STMicroelectronics. January 1999 - Ed: 5C 1/8 THBT7011D Peak Surge Voltage (V) Voltage Waveform (µs) Current Waveform (µs) Admissible Ipp (A) Necessary Resistor (Ω) CCITT K20 4000 10/700 5/310 25 - VDE0433 4000 10/700 5/310 40 10 VDE0878 IEC-1000-4-5 4000 1.2/50 1/20 50 - level 4 level 4 10/700 1.2/50 5/310 8/20 25 50 - FCC Part 68, lightning surge type A 1500 800 10/160 10/560 10/160 10/560 47 35 25 15.5 FCC Part 68, lightning surge type B 100 9/720 5/320 25 - BELLCORE TR-NWT-001089 First level 2500 1000 2/10 10/1000 2/10 10/1000 90 30 23 24 BELLCORE TR-NWT-001089 Second level 5000 2/10 2/10 90 50 CNET l31-24 4000 0.5/700 0.8/310 25 - COMPLIES WITH THE FOLLOWING STANDARDS: ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter Value Unit IPP Peak pulse current (see note 1) 10/1000 µs 30 A ITSM Non repetitive surge peak on-state current (F=50Hz) tp = 100 ms t = 1s 15.5 9 A Tstg Tj Storage temperature range Maximum operating junction temperature - 40 to + 150 + 150 °C °C TL Maximum lead temperature for soldering during 10s 260 °C Note 1 : Pulse waveform : 10/1000µs tr=10µs tp=1000µs Itsm ( A ) F=50Hz Tj initial=+25°C 30 % I PP 25 100 20 15 50 10 0 tr tp t 5 0 50 2/8 t ( ms ) 100 200 500 1 000 2 000 THBT7011D TEST CIRCUITS FOR IPP Transversal mode TIP or RING I THBT RP PP See test circuit 3 GND THERMAL RESISTANCES Symbol Rth (j-a) Parameter Junction to ambient ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Value Unit 170 °C/W I Parameter IPP VRM Stand-offvoltage IRM VR Leakage current at stand-off voltage Continuous Reverse voltage VBR Breakdown voltage VBO IH Breakover voltage Holding current IBO IPP Breakover current C Capacitance IBO IH V IR VRM VR VBRVBO Peak pulse current STATIC PARAMETERS BETWEEN TIP AND GND, RING AND GND Type IRM @ VRM max. THBT7011D IR @ V R max. note 1 VBO @ IBO IH C max. note 2 min. max. min note 3 max note 4 µA V µA V V mA mA mA pF 5 66 50 70 89 50 400 150 80 3/8 THBT7011D STATIC PARAMETERS BETWEEN TIP AND RING Type IRM @ VRM C max. note 6 max. note 6 max note 4 µA V µA V pF 5 132 50 140 40 THBT7011D Note 1: Note 2: Note 3: Note 4: Note 5 : Note 6: IR @ V R IR measured at VR guarantees VBR > VR Measured at 50 Hz (1 cycle) test circuit 1. See the reference test circuit 2. VR = 1V, F = 1MHz. See test circuit 3 for VBO dynamic parameters; Rp is the protection resistor located on the line card. Ground not connected or |V TIP| = |VRING| versus Ground DYNAMIC BREAKOVER VOLTAGES (Transversal mode) Type Symbol THBT7011D VBO Test conditions (see note 5) 10/700µs 1.2/50µs 2/10µs 1.5kV 1.5kV 2.5kV Rp=10Ω Rp=10Ω Rp=62Ω IPP=30A IPP=30A IPP=38A Maximum Unit 90 95 150 V TEST CIRCUIT 1 for IBO and V BO parameters: tp = 20ms Auto Transformer 220V/2A R1 static relay. 140 R2 240 K 220V Vout IBO measure Transformer 220V/800V 5A TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. 4/8 D.U.T V BO measure THBT7011D TEST CIRCUIT 2 for IH parameter. R - VP D.U.T. VBAT = - 48 V Surge generator This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max. TEST CIRCUIT 3 for IPP and VBO parameters : R4 (VP is defined in no load condition) TIP L R2 R ING R3 VP R1 C1 C2 G ND Pulse (µs) Vp C1 C2 L R1 R2 R3 R4 IPP Rp tr tp (V) (µF) (nF) (µH) (Ω) (Ω) (Ω) (Ω) (A) (Ω) 10 700 1500 20 200 0 50 15 25 25 30 10 1.2 50 1500 1 33 0 76 13 25 25 30 10 2 10 2500 10 0 1.1 1.3 0 3 3 38 62 5/8 THBT7011D APPLICATION CIRCUIT : 1 - Line card protection RING GENERATOR - V BAT PTC LINE A T E S T RING RELAY R SLIC E L 220 nF A Y S LINE B 6/8 THBT7011D PTC LCP1511D THBT7011D ORDER CODE THBT 70 1 1 D RL PACKAGING: RL = tape and reel. = tube. BIDIRECTIONAL TRISIL LOW DYNAMIC CHARACTERISTICS. BREAKDOWN VOLTAGE PACKAGE: 1 = SO8 Plastic. VERSION MARKING Types Package Marking THBT7011D SO-8 BT701D MARKING : Logo, Date Code, Part Number. PACKAGE MECHANICAL DATA. SO-8 Plastic REF. DIMENSIONS Millimetres Min. L Typ. Inches Max. Min. Typ. Max. c1 A C a3 a2 A a1 0.1 a2 a1 S e b D M 8 0.25 0.004 0.010 1.65 0.065 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 C 0.25 0.50 0.010 0.020 0.50 c1 5 F 1 0.069 b1 E e3 1.75 45°(typ) D 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244 4 Packaging : Products supplied in antistatic tubes or tape and reel. Weight : 0.08g e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 L 0.4 1.27 0.016 0.050 0.6 0.024 M S 0.15 0.157 8° (max) 7/8 THBT7011D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 8/8