VN02ANSP HIGH SIDE SMART POWER SOLID STATE RELAY T YPE V DSS R DS( on ) I OUT V CC VN02ANSP 60 V 0.35 Ω 7 A 36 V ■ ■ ■ ■ ■ ■ OUTPUT CURRENT (CONTINUOUS): 7A @ Tc=25oC LOGIC LEVEL 5V COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT FAST DEMAGNETIZATION OF INDUCTIVE LOAD DESCRIPTION The VN02ANSP is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The diagnostic output indicates an over temperature status. Fast turn-off of inductive load is achieved by negative (-18 V) load voltage at turn-off. 10 1 PowerSO-10TM BLOCK DIAGRAM July 1998 1/9 VN02ANSP ABSOLUTE MAXIMUM RATING Symb ol Parameter Valu e Unit V (BR)DSS Drain-Source Breakdown Voltage 60 V Output Current (cont.) 7 A IR Reverse Output Current -7 A I IN Input Current ±10 mA I OUT -V CC Reverse Supply Voltage I STAT Status Current (sink) V ESD Electrostatic Discharge (1.5 kΩ, 100 pF) P tot Tj T s tg o Power Dissipation at T c ≤ 25 C V mA 2000 V 31 W Junction Operating Temperature -40 to 150 o Storage Temperature -55 to 150 o CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/9 -4 ±10 C C VN02ANSP THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient ($) Max Max o 4 50 o C/W C/W ($) When mounted using minimum recommended pad size on FR-4 board ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; Tcase = 25 oC unless otherwise specified) POWER Symb ol V CC * R on IS Parameter Test Cond ition s Min. o 7 o Supply Voltage -40 C < T j < 125 C On State Resistance I OUT = 3 A I OUT = 1 A Supply Current VCC = 30 V Typ . Tj = 125 o C Off St ate V CC = 30 V On State VCC = 30 V On State VCC = 30 V Tj = 125 o C Max. Un it 36 V 0.35 0.6 Ω Ω 1 9 7 mA mA mA Max. Un it SWITCHING Symb ol Parameter t d(on) Turn-on Delay Time Of Output Current I OUT = 3 A Resistive Load Input Rise T ime < 0.1 µs 15 µs Rise Time O f O utput Current I OUT = 3 A Resistive Load Input Rise T ime < 0.1 µs 15 µs Turn-off Delay Time O f I OUT = 3 A Resistive Load Output Current Input Rise T ime < 0.1 µs 14 µs Fall T ime Of Output Current I OUT = 3 A Resistive Load Input Rise T ime < 0.1 µs 4.5 µs (di/dt) on Turn-on Current Slope I OUT = 3 A I OUT = I OV 25 C < Tj < 125 C 25 o C < T j < 125 o C (di/dt) off Turn-off Current Slope I OUT = 3 A I OUT = I OV 25 C < Tj < 125 C 25 o C < T j < 125 o C V DEMAG Inductive Load Clamp Voltage I OUT = 3 A -40 o C < T j < 125 o C tr t d(of f) tf Test Cond ition s Min. Typ . o o 0.5 1 A/µs A/µs o o 1.5 4 A/µs A/µs -24 -18 -14 V Min. Typ . Max. Un it 0.8 V (*) V LOGIC INPUT (-40 oC ≤ Tj ≤ 125 oC unless otherwise specified) Symb ol Parameter VI L Input Low Level Voltage VI H Input High Level Voltage V I(hyst.) Input Hysteresis Voltage I IN V ICL Input Current Input Clamp Voltage Test Cond ition s 2 0.5 VI N = 5 V VI N = 2 V V I N = 0.8 V I IN = 10 mA I IN = -10 mA 250 V 600 300 25 5.5 6 -0.7 -0.3 µA µA µA V V 3/9 VN02ANSP ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (-40 oC ≤ Tj ≤ 125 oC unless otherwise specified) Symb ol Parameter Test Cond ition s V STAT Status Voltage Output Low I STAT Status Leakage Current V STAT = 5 V V USD Under Voltage Shut Down V SCL Status Clamp Voltage Min. Typ . I STAT = 1.6 mA I STAT = 10 mA I STAT = -10 mA Max. Un it 0.4 V 10 µA 3.5 6 7 V 5.5 6 -0.7 -0.3 V V I OV Over Current R LOAD < 10 mΩ I av Average Current In Short Circuit R LOAD < 10 mΩ I DOFF Leakage Current V CC = 30 V T TSD Thermal Shut-down Temperature 140 o C TR Reset Temperature 125 o C o T c = 85 C 15 A 0.6 A 1 mA (*) The Vih is internally clamped at about 6V. It is possible to connect this pin to a higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. TRUTH TABLE INPUT DIAGNOST IC O UTPUT Normal Operation L H H H L H O ver-temperature H L L Under-voltage X H L Figure 1: Waveforms 4/9 VN02ANSP FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates over temperature conditions. The truth table shows input, diagnostic output status and output voltage level in normal operation and fault conditions. The output signals are processed by internal logic. To protect the device against short circuit and over current conditions, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to 125 oC the switch is automatically turned on again. To ensure the protection in all VCC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 28V according to: Vds = VCC - IOV * (Ri + Rw + Rl) where: Ri = internal resistence of Power Supply Rw = Wires resistance Rl = Short Circuit resistance Driving inductive loads, an internal function of the device ensures the fast demagnetization with typical voltage (Vdemag) of -18V. This function allows the reduction of the power dissipation according to the formula: Pdem = 0.5 * Lload * (Iload)2 * [(VCC + Vdem)/Vdem] * f where f = Switching Frequency Based on this formula it is possible to know the value of inductance and/or current to avoid a thermal shut-down. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simpliest way to protect the device against a continuous reverse battery voltage (-36V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (Fig. 3). The consequences of the voltage drop across this diode are as follows: If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (Vil, Vih thresholds and Vstat are increased by Vf with respect to power GND). The undervoltage shut-down level is increased by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board avoiding shift of Vih, Vil and Vstat. This solution allows the use of a standard diode. Figure 2: Over Current Test Circuit 5/9 VN02ANSP Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 6/9 VN02ANSP RDS(on) vs Junction Temperature RDS(on) vs Supply Voltage RDS(on) vs Output Current Input Voltages vs Junction Temperature Output Current Derating 7/9 VN02ANSP PowerSO-10 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 e 1.27 0.240 0.050 F 1.25 1.35 0.049 0.053 H 13.80 14.40 0.543 0.567 1.80 0.047 h 0.50 L 0.002 1.20 q 1.70 0.067 o α 0.071 8o 0 B 0.10 A B 10 5 e 0.25 B = = = E4 = = = 1 E1 = E3 = E2 = E = = = H 6 SEATING PLANE DETAIL ”A” A C M Q h D = D1 = = = SEATING PLANE A F A1 A1 L DETAIL ”A” α 0068039-C 8/9 VN02ANSP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 9/9