WS57C128FB HIGH SPEED 16K x 8 CMOS EPROM KEY FEATURES • Very Fast Access Time • Standard EPROM Pinout • DIP and Surface Mount Packaging — 35 ns • Low Power Consumption • EPI Processing Available — Latch-up Immunity Up to 200 mA GENERAL DESCRIPTION The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming only 90 mA. Two major features of the WS57C128FB are its Low Power and High Speed. These features make it an ideal solution for applications which require fast access times, low power, and non-volatility. Typical applications include systems which do not utilize mass storage devices and/or are board space limited. The WS57C128FB is configured in the standard EPROM pinout which provides an easy upgrade path for systems which are currently using standard EPROMs. The EPROMs are available in both 600 Mil DIP packages, and both J-leaded and leadless surface mount packages. MODE SELECTION PINS PGM CE OE VPP TOP VIEW VCC OUTPUTS Chip Carrier Read X VIL VIL VCC VCC DOUT Output Disable X X VIH VCC VCC High Z CERDIP A7 A12 VPP NC VCC PGM A13 MODE PIN CONFIGURATION Standby X VIH X VCC VCC High Z Program VIL VIL VIH VPP VCC DIN Program Verify VIH VIL VIL VPP VCC DOUT Program Inhibit X VIH X VPP VCC High Z X can be VIL or VIH. A6 A5 A4 A3 A2 A1 A0 NC O0 32 31 30 1 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 14 15 16 17 18 19 20 O1 O2 GND 4 3 2 A8 A9 A11 NC OE A10 CE O7 O6 NC O3 O4 O5 VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 PRODUCT SELECTION GUIDE PARAMETER WS57C128FB-35 WS57C128FB-45 WS57C128FB-55 WS57C128FB-70 Address Access Time (Max) 35 ns 45 ns 55 ns 70 ns Chip Select Time (Max) 35 ns 45 ns 55 ns 70 ns Output Enable Time (Max) 20 ns 25 ns 25 ns 25 ns Return to Main Menu 3-7 WS57C128FB ABSOLUTE MAXIMUM RATINGS* *NOTICE: Storage Temperature............................–65° to + 150°C Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability. Voltage on any Pin with Respect to Ground ....................................–0.6V to +7V VPP with Respect to Ground...................–0.6V to + 13V ESD Protection ..................................................> 2000V OPERATING RANGE RANGE TEMPERATURE VCC 0°C to +70°C +5V ± 10% Industrial –40°C to +85°C +5V ± 10% Military –55°C to +125°C +5V ± 10% Commercial DC READ CHARACTERISTICS Over Operating Range with VPP = VCC SYMBOL PARAMETER TEST CONDITIONS MIN MAX UNITS VIL Input Low Voltage (Note 5) – 0.1 0.8 V VIH Input High Voltage (Note 5) 2.0 VCC + 0.3 V VOL Output Low Voltage IOL = 16 mA 0.4 V VOH Output High Voltage IOH = – 4 mA ISB1 VCC Standby Current (CMOS) (Notes 1 and 3) 500 µA ISB2 VCC Standby Current (TTL) (Notes 2 and 3) 15 mA VCC Active Current (CMOS) (Notes 1 and 4) Outputs Not Loaded Comm'l Industrial Military 30 40 40 mA mA mA ICC2 VCC Active Current (TTL) (Notes 2 and 4) Outputs Not Loaded Comm'l Industrial Military 50 60 60 mA mA mA IPP VPP Supply Current VPP = VCC 100 µA VPP VPP Read Voltage VCC – 0.4 VCC V ILI Input Leakage Current VIN = 5.5V or Gnd –10 10 µA ILO Output Leakage Current VOUT = 5.5 V or Gnd –10 10 µA ICC1 NOTES: 1. CMOS inputs: GND ± 0.3V or VCC ± 0.3V. 2. TTL inputs: VIL ≤ 0.8V, VIH ≥ 2.0V. 3. Add 1 mA/MHz for A.C. power component. 2.4 V 4. Add 4 mA/MHz for A.C. power component. 5. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise. Do not attempt to test these values without suitable equipment. AC READ CHARACTERISTICS Over Operating Range with VPP = VCC PARAMETER SYMBOL 57C128FB-35 57C128FB-45 57C128FB-55 MIN MAX MIN MAX MIN MAX 57C128FB-70 MIN Address to Output Delay tACC 35 45 55 70 CE to Output Delay tCE 35 45 55 70 OE to Output Delay tOE 20 25 25 25 Output Disable to Output Float tDF 20 25 25 25 Address to Output Hold tOH 3-8 0 0 0 0 UNITS MAX ns WS57C128FB AC READ TIMING DIAGRAM VALID ADDRESSES tACC tOH CE tCE tDF OE tOE OUTPUTS VALID tDF CAPACITANCE (6) TA = 25°C, f = 1 MHz SYMBOL PARAMETER CONDITIONS TYP (7) MAX UNITS VIN = 0V 4 6 pF C IN Input Capacitance C OUT Output Capacitance VOUT = 0V 8 12 pF C VPP VPP Capacitance VPP = 0 V 18 25 pF NOTES: 6. This parameter is only sampled and is not 100% tested. 7. Typical values are for TA = 25°C and nominal supply voltages. TEST LOAD (High Impedance Test Systems) A.C. TESTING INPUT/OUTPUT WAVEFORM 97.5 Ω 2.01 V D.U.T. 3.0 30 pF (INCLUDING SCOPE AND JIG CAPACITANCE) 0.0 2.0 0.8 2.0 TEST POINTS 0.8 A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V for a logic "0." Timing measurements are made at 2.0 V for a logic "1" and 0.8 V for a logic "0". NOTE: 8. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters. A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended. Inadequate decoupling may result in access time degradation or other transient performance failures. 3-9 WS57C128FB PROGRAMMING INFORMATION DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V) SYMBOLS PARAMETER Input Leakage Current (VIN = VCC or Gnd) VPP Supply Current During Programming Pulse (CE = PGM = VIL) VCC Supply Current Output Low Voltage During Verify (IOL = 16 mA) Output High Voltage During Verify (IOH = –4 mA) ILI IPP ICC VOL VOH NOTE: MIN MAX UNITS –10 10 µA 60 mA 30 mA 0.4 V 2.4 V 9. VCC must be applied either coincidentally or before VPP and removed either coincidentally or after VPP. 10. VPP must not be greater than 13 volts including overshoot. During CE = PGM = VIL, VPP must not be switched from 5 volts to 12.5 volts or vice-versa. 11. During power up the PGM pin must be brought high (≥ VIH) either coincident with or before power is applied to VPP. AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V) SYMBOLS PARAMETER MIN TYP MAX t AS Address Setup Time 2 µs t CES Chip Enable Setup Time 2 µs t OES Output Enable Setup Time 2 µs t OS Data Setup Time 2 µs t AH Address Hold Time 0 µs t OH Data Hold Time 2 µs t DF Chip Disable to Output Float Delay 0 t OE Data Valid From Output Enable t VS VPP Setup Time t PW PGM Pulse Width ADDRESS STABLE tAH HIGH Z DATA IN STABLE tOS tOH tVS VIH CE VIL tCES VIH VIL tPW VIH OE VIL DATA OUT VALID tOE VPP VCC PGM 130 ns 200 tAS VPP ns µs 100 ADDRESSES DATA 130 2 PROGRAMMING WAVEFORM 3-10 UNITS tOES tDF µs WS57C128FB ORDERING INFORMATION PART NUMBER WS57C128FB-35D WS57C128FB-45D WS57C128FB-45DMB WS57C128FB-45J WS57C128FB-45L WS57C128FB-55CMB WS57C128FB-55D WS57C128FB-55DMB WS57C128FB-70D WS57C128FB-70DM WS57C128FB-70DMB NOTE: SPEED (ns) PACKAGE TYPE 35 45 45 45 45 55 55 55 70 70 70 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.6" 32 Pin PLDCC 32 Pin CLDCC 32 Pad CLLCC 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.6" OPERATING PACKAGE TEMPERATURE DRAWING RANGE D2 D2 D2 J4 L3 C2 D2 D2 D2 D2 D2 WSI MANUFACTURING PROCEDURE Comm'l Comm'l Military Comm'l Comm'l Military Comm'l Military Comm'l Military Military Standard Standard MIL-STD-883C Standard Standard MIL-STD-883C Standard MIL-STD-883C Standard Standard MIL-STD-883C 12. The actual part marking will not include the initials "WS." PROGRAMMING/ALGORITHMS/ERASURE/PROGRAMMERS REFER TO PAGE 5-1 The WS57C128FB is programmed using Algorithm D shown on page 5-9. Return to Main Menu 3-11