HN1K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K05FU For Portable Devices High Speed Switching Applications Interface Applications Unit: mm · High input impedance and extremely low drive current. · Vth is low and it is possible to drive directly at low-voltage CMOS. · Suitable for high-density mounting because of a compact package. : Vth = 0.5 to 1.0 V Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V ID 100 mA 200 mW DC drain current Drain power dissipation PD (Note) Channel temperature Tch 150 °C JEDEC ― Storage temperature range Tstg -55 to 150 °C JEITA ― TOSHIBA Note: TOTAL rating 2-2J1C Weight: 6.8 mg Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol Test Condition Min Typ. Max Unit IGSS VGS = 10 V, VDS = 0 V ¾ ¾ 1 mA V (BR) DSS ID = 100 mA, VGS = 0 V 20 ¾ ¾ V IDSS VDS = 20 V, VGS = 0 V ¾ ¾ 1 mA Vth VDS = 1.5 V, ID = 0.1 mA 0.5 ¾ 1 V ïYfsï VDS = 1.5 V, ID = 10 mA 35 70 ¾ mS Drain-Source ON resistance 1 RDS (ON) 1 ID = 1 mA, VGS = 1.2 V ¾ 15 50 W Drain-Source ON resistance 2 RDS (ON) 2 ID = 10 mA, VGS = 1.5 V ¾ 10 40 W Drain-Source ON resistance 3 RDS (ON) 3 ID = 10 mA, VGS = 2.5 V ¾ 7 28 W Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Input capacitance Ciss VDS = 1.5 V, VGS = 0 V, f = 1 MHz ¾ 12 ¾ pF Reverse transfer capacitance Crss VDS = 1.5 V, VGS = 0 V, f = 1 MHz ¾ 3.4 ¾ pF Output capacitance Coss VDS = 1.5 V, VGS = 0 V, f = 1 MHz ¾ 12 ¾ pF ton VDD = 1.5 V, ID = 10 mA, VGS = 0 to 1.5 V ¾ 0.35 ¾ toff VDD = 1.5 V, ID = 10 mA, VGS = 0 to 1.5 V ¾ Switching time 1 ms 0.2 ¾ 2002-01-16 HN1K05FU Equivalent Circuit (top view) 6 5 Marking 4 6 Q1 2 4 KK Q2 1 5 1 3 2 3 (Q1, Q2 common) Switching Time Test Circuit (a) Test circuit (b) VIN ID 1.5 V 0 10 ms VIN OUT RL 50 W IN VGS VDD VDD = 1.5 V D.U. < = 1% VIN: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25°C 1.5 V 0 90% 10% VDD 10% (c) VOUT VDS 90% VDS (ON) tr ton 2 tf toff 2002-01-16 HN1K05FU (Q1, Q2 common) 100 ID – VDS (low voltage region) ID – VDS 100 2.0 V source 80 (mA) (mA) Common source Ta = 25°C Common 1.8 V 80 2.5 V Drain current ID Drain current ID 60 1.4 V 40 1.2 V 20 VGS = 1 V 4 8 12 16 Drain-source voltage VDS 60 1.2 V 20 0 0 20 1.2 2.0 (V) Common source Ta = 25°C Ta = 100°C -25°C 25°C 1 0.1 0.5 1 1.5 2 1.2 V 1.5 V 10 VGS = 2.5 V 1 0.1 2.5 Gate-source voltage VGS (V) 1 (mA) ïYfsï – ID RDS (ON) – Ta 1000 Common source 40 30 VGS = 1.5 V, ID = 10 mA VGS = 1.2 V, ID = 1 mA 10 Forward transfer admittance ïYfsï (mS) Common source 20 100 10 Drain current ID 50 Drain-source on resistance RDS (ON) (W) 1.6 RDS (ON) – ID 100 Drain-source on resistance RDS (ON) (W) (mA) Drain current ID 0.8 Drain-source voltage VDS Common source 0.01 0 0.4 (V) VDS = 1.5 V 10 1.4 V 40 VGS = 1 V ID – VGS 100 1.6 V 2.2 V 1.6 V 0 0 1.8 V 2.0 V VDS = 1.5 V Ta = 25°C 100 10 VGS = 2.5 V, ID = 10 mA 0 -50 0 50 100 1 1 150 Ambient temperature Ta (°C) 10 Drain current ID 3 100 1000 (mA) 2002-01-16 HN1K05FU (Q1, Q2 common) C – VDS t – ID 10000 Common source VGS = 0 VDD = 1.5 V f = 1 MHz VGS = 0 to 1.5 V (ns) Common source Ta = 25°C Switching time t Capacitance C (pF) 100 Ciss 10 Coss Ta = 25°C 1000 toff ton 100 tf tr Crss 0 0.1 1 10 10 0.1 100 Drain-source voltage VDS (V) 1 Drain current ID 10 100 (mA) PD* – Ta Drain power dissipation PD* (mW) 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) *: TOTAL rating 4 2002-01-16 HN1K05FU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2002-01-16