SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Analog Switching Applications · · Unit: mm Compact package suitable for high-density mounting Low ON-resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V DC ID 100 Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Drain current Marking mA Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-2H1B Weight: 2.4 mg (typ.) 3 3 DP 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2001-12-04 SSM3K15FS Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Test Condition Min Typ. Max Unit IGSS VGS = ±16 V, VDS = 0 ¾ ¾ ±1 mA V (BR) DSS ID = 0.1 mA, VGS = 0 30 ¾ ¾ V IDSS VDS = 30 V, VGS = 0 ¾ ¾ 1 mA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.8 ¾ 1.5 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 10 mA 25 ¾ ¾ mS Drain-Source ON resistance RDS (ON) ID = 10 mA, VGS = 4 V ¾ 2.2 4.0 ID = 10 mA, VGS = 2.5 V ¾ 4.0 7.0 W Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 7.8 ¾ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 3.6 ¾ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 8.8 ¾ pF VDD = 5 V, ID = 10 mA, VGS = 0~5 V ¾ 50 ¾ ¾ 180 ¾ Switching time Turn-on time ton Turn-off time toff ns Switching Time Test Circuit (a) Test circuit (b) VIN 5V OUT 5V 90% 50 9 IN 0 10 ms RL VDD 0V (c) VOUT VDD = 5 V D.U. < = 1% VIN: tr, tf < 5 ns (Zout = 50 W) Common source Ta = 25°C 10% VDD 10% 90% VDS (ON) tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on this product. 2 2001-12-04 SSM3K15FS ID – VDS ID – VGS 250 1000 Common Source VDS = 3 V 100 2.7 ID 150 Drain current ID Drain current Common Source Ta = 25°C 3 (mA) 4 (mA) 200 10 2.5 100 2.3 50 Ta = 100°C 10 -25°C 25°C 1 0.1 VGS = 2.1 V 0 0 0.5 1 1.5 Drain-Source voltage VDS 0.01 0 2 1 (V) 2 3 Gate-Source voltage RDS (ON) –ID VGS 6 Common Source Common Source ID = 10 mA 5 8 Drain-Source on resistance RDS (ON) (W) Drain-Source on resistance RDS (ON) (W) Ta = 25°C VGS = 2.5 V 4 4V 2 4 Ta = 100°C 3 25°C 2 -25°C 1 0 0 40 80 120 Drain current ID 160 0 0 200 2 (mA) 4 (V) 1.8 6 5 VGS = 2.5 V 4 3 4V 2 1 0 -25 8 VGS 10 (V) Vth – Ta 2 Common Source ID = 10 mA Gate threshold voltage Vth Drain-Source on resistance RDS (ON) (W) 7 6 Gate-Source voltage RDS (ON) – Ta 8 (V) RDS (ON) – VGS 10 6 4 1.6 Common Source ID = 0.1 mA VDS = 3 V 1.4 1.2 1 0.8 0.6 0.4 0.2 0 25 50 75 100 125 0 -25 150 Ambient temperature Ta (°C) 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 3 2001-12-04 SSM3K15FS ïYfsï – ID IDR – VDS 250 (mA) Common Source 500 V DS = 3 V 300 Ta = 25°C Drain reverse current IDR Forward transfer admittance |Yfs| (mS) 1000 100 50 30 10 5 3 1 1 10 100 Drain current ID 200 Common Source VGS = 0 V Ta = 25°C D 150 S 100 50 0 0 1000 IDR G -0.2 (mA) -0.4 -0.6 3000 3000 (ns) 1000 500 Switching time 100 10 0.1 ton tf 300 ton 100 tr 50 30 tr 1 10 Drain current ID 10 0.1 100 1 (mA) 10 Drain current (mW) 200 PD 30 10 Drain power dissipation (pF) (mA) 250 Common Source VGS = 0 V f = 1 MHz Ta = 25°C 50 Capacitance C ID 100 PD – Ta C – VDS 100 Ciss Coss 5 3 Crss 1 0.5 0.3 0.1 0.1 (V) toff tf 300 30 -1.4 Common Source VDD = 3 V VGS = 0~2.5 V Ta = 25°C 5000 t (ns) Switching time t toff 50 -1.2 t – ID 10000 Common Source VDD = 5 V VGS = 0~5 V Ta = 25°C 5000 500 -1 Drain-Source voltage VDS t – ID 10000 1000 -0.8 1 10 Drain-Source voltage VDS 150 100 50 0 0 100 (V) 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2001-12-04 SSM3K15FS RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2001-12-04 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.