SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications • Small package • Low on resistance : Ron = 0.8 Ω (max) (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) • Low gate threshold voltage Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±12 V DC ID 400 Pulse IDP 800 PD (Note1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current Drain power dissipation (Ta = 25°C) mA Note1: Total rating, mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 5) Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 000707EAA1 • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 2000-07-19 1/4 SSM5N05FU Marking Equivalent Circuit (top view) 5 4 5 DF 1 2 4 Q1 3 Q2 1 2 3 Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Min Typ. Max Unit VGS = ±12 V, VDS = 0 ±1 µA ID = 1 mA, VGS = 0 20 V VDS = 20 V, VGS = 0 1 µA Vth VDS = 3 V, ID = 0.1 mA 0.6 1.1 V Forward transfer admittance Yfs VDS = 3 V, ID = 200 mA (Note2) 350 mS Drain-Source ON resistance RDS (ON) ID = 200 mA, VGS = 4 V (Note2) 0.6 0.8 ID = 200 mA, VGS = 2.5 V (Note2) 0.85 1.2 Gate leakage current IGSS Drain-Source breakdown voltage Drain cut-off current V (BR) DSS IDSS Gate threshold voltage Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time Test Condition VDS = 3 V, VGS = 0, f = 1 MHz Ω 22 pF 9 pF 21 pF Turn-on time ton VDD = 3 V, ID = 100 mA, 60 Turn-off time toff VGS = 0~2.5 V 70 ns Note2: Pulse test Switching Time Test Circuit (a) Test circuit (b) VIN 2.5 V OUT 2.5 V 90% 50 Ω IN 0 10 µs VDD = 3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C 10% 0V RL VDD (c) VOUT VDD VDS (ON) 10% 90% tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 µA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on this product. 2000-07-19 2/4 SSM5N05FU (Q1, Q2 common) ID – VDS ID – VGS 1000 1000 Common Source 10 4 800 3 VDS = 3 V 100 600 2.1 400 1.9 Drain current ID (mA) 2.3 (mA) Drain current ID Common Source Ta = 25°C 2.5 1.7 200 10 Ta = 100°C 1 25°C −25°C 0.1 VGS = 1.5 V 0 0 0.5 1.0 1.5 Drain-Source voltage VDS 0.01 0 2.0 0.5 (V) 1.0 1.5 2.0 Gate-Source voltage VGS RDS (ON) – ID 3.0 (V) RDS (ON) – VGS 2.0 2.0 Common Source Common Source Ta = 25°C ID = 200 mA 1.6 Drain-Source on resistance RDS (ON) (Ω) Drain-Source on resistance RDS (ON) (Ω) 2.5 1.2 2.5 V 0.8 VGS = 4 V 0.4 1.6 1.2 Ta = 100°C 0.8 25°C 0.4 −25°C 0 0 200 400 600 Drain current ID 800 0 0 1000 2 (mA) 4 RDS (ON) – Ta Forward transfer admittance Yfs (mS) Drain-Source on resistance RDS (ON) (Ω) ID = 200 mA 1.6 2.5 V 0.8 VGS = 4 V 0.4 0 25 50 75 10 (V) Yfs – ID Common Source 0 −25 8 Gate-Source voltage VGS 2.0 1.2 6 100 Ambient temperature Ta (°C) 125 150 5000 Common Source 3000 VDS = 3 V Ta = 25°C 1000 500 300 100 10 30 50 100 Drain current ID 300 500 1000 (mA) 2000-07-19 3/4 SSM5N05FU (Q1, Q2 common) IDR – VDS C – VDS 1000 100 VGS = 0 Ta = 25°C 50 30 (pF) 800 D 600 G Capacitance C Drain reverse current IDR (mA) Common Source IDR S 400 Ciss 10 Coss 5 Common Source 3 Crss VGS = 0 f = 1 MHz 200 Ta = 25°C 1 0.1 0 0 −0.2 −0.4 −0.6 −0.8 −1.0 Drain-Source voltage VDS −1.2 0.3 1 PD* – Ta toff 300 Common Source Mounted on FR4 board. VDD = 3 V VGS = 0~2.5 V (25.4 mm × 25.4 mm × 1.6 t 2 Cu Pad: 0.32 mm × 5) Drain power dissipation PD* (mW) Switching time t (ns) (V) 400 500 Ta = 25°C tf ton 30 tr 10 1 30 (V) t – ID 50 10 Drain-Source voltage VDS −1.4 1000 100 3 3 10 30 Drain current ID 100 (mA) 300 200 100 300 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) *: Total rating 2000-07-19 4/4