TSD2444 Low Vce(sat) NPN Transistor BVCEO = 20V Ic = 1A VCE (SAT), = 0.2V(typ.) @Ic / Ib = 0.5A / 50mA Pin assignment: 1. Base 2. Emitter 3. Collector Features Ordering Information Low VCE (SAT). Part No. Excellent DC current gain characteristics Structure Epitaxial planar type. Complementary to TSB1590CX Packing TSD2444CX Package Tape & Reel SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 40V V Collector-Emitter Voltage VCEO 20V V VEBO 5 V IC 1 A Emitter-Base Voltage Collector Current DC Pulse 1.5 (note 1) Collector Power Dissipation PD Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 10mS 0.225 W TJ +150 o C TSTG - 55 to +150 o C Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 10uA, IE = 0 BVCBO 40 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 20 -- -- V Emitter-Base Breakdown Voltage IE = 10uA, IC = 0 BVEBO 5 -- -- V Collector Cutoff Current VCB = 20V, IE = 0 ICBO -- -- 0.5 uA Emitter Cutoff Current VEB = 4V, IC = 0 Collector-Emitter Saturation Voltage IC / IB = 500mA / 50mA DC Current Transfer Ratio VCE = 2V, IC = 0.1A Transition Frequency VCE = 5V, IC = 50mA, IEBO -- -- 0.5 uA VCE(SAT) -- 0.2 0.4 V hFE 82 -- 390 fT -- 150 -- MHz Cob -- 15 -- pF f = 100MHz Output Capacitance VCB = 10V, f=1MHz Note : pulse test: pulse width <=380uS, duty cycle <=2% Classification Of hFE Rank Range TSD2444 P Q R 82 - 180 120 - 270 180 - 390 1-3 2003/12 rev. A Electrical Characteristics Curve TSD2444 2-3 2003/12 rev. A SOT-23 Mechanical Drawing A B F SOT-23 DIMENSION DIM E G D MILLIMETERS MIN MAX INCHES MIN MAX A 2.80 3.04 0.110 0.120 B C 0.30 1.70 0.50 2.30 0.012 0.067 0.020 0.091 D 0.25 0.65 0.010 0.026 E F 1.2 0.89 1.60 1.30 0.047 0.035 0.063 0.051 G 0.08 0.17 0.003 0.006 C Marking: BS TSD2444 3-3 2003/12 rev. A