IGBT MODU ODULE MBN400GS12BW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base). E C E G Weight: 480 (g) TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Symbol Unit MBN400GS12BW VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - V V 1,200 ±20 400 800 400 800 2,000 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.37(14)/2.94(30) 2.94(30) A A W °C °C VRMS N.m (kgf.cm) Notes:(1)RMS Current of Diode 180Arms max. (2)Recommended Value 1.18/2.45N.m(12/25kgf.cm) CHARACTERISTICS Item (1) (2) (3) (3)Recommended Value 2.45N.m(25kgf.cm) (Tc=25°C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA 1.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES nA ±500 VGE=±20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.7 3.4 IC=400A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =400mA Input Capacitance Cies pF 37,000 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.25 0.5 VCC=600V ms Turn On Time ton 0.4 0.7 RL=1.5W Switching Times Fall Time tf 0.25 0.35 RG=2.7W (4) 0.75 1.1 VGE=±15V Turn Off Time toff Peak Forward Voltage Drop VFM V 3.5 IF=400A,VGE=0V Reverse Recovery Time trr 0.4 IF=400A,VGE=-10V, di/dt=400A/ms ms Junction to case Rth(j-c) °C/W 0.06 Thermal Impedance IGBT 0.12 FWD Rth(j-c) Notes:(4) RG value is the test condition’s value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. PDE-N400GS12BW-0 14V VGE=15V 13V12V 800 14V VGE=15V 13V12V TYPICAL Tc=125°C 600 11V 400 Pc=2000W Collector Current, Ic (A) Tc=25°C Collector Current, Ic (A) TYPICAL 800 11V 600 400 10V 10V 200 200 9V 9V 0 0 0 2 4 6 8 0 10 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage 2 4 6 8 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage TYPICAL TYPICAL 10 10 Tc=125°C Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) Tc=25°C 8 6 4 Ic =800A Ic =400A 2 8 6 4 Ic =800A Ic =400A 2 0 0 0 5 10 15 0 20 TYPICAL 15 20 VGE=0 Tc=25°C Tc=125°C Vcc=600V Ic =400A Tc=25°C Forward Current, IF (A) 10 10 TYPICAL 800 20 15 5 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage Gate to Emitter Voltage, VGE (V) 10 600 400 200 5 0 0 0 500 1000 1500 2000 2500 Gate Charge, QG (nc) Gate charge characteristics 3000 0 1 2 3 4 5 Forward Voltage, VF (V) Forward voltage of free-wheeling diode PDE-N400GS12BW-0 TYPICAL 1.5 Switching Time, t (ms) Switching Time, t (ms) TYPICAL 10 Vcc=600V VGE=±15V RG=2.7W TC=25°C Resistive Load 1.0 toff 0.5 ton VCC=600V VGE=±15V IC =400A TC=25°C Resistive Load toff 1 ton tr tf tf tr 0 0 100 200 300 400 0.1 500 1 10 100 Gate Resistance, RG (W) Switching time vs. Gate resistance Collector Current, IC (A) Switching time vs. Collector current TYPICAL 60 TYPICAL 100 Etoff Vcc=600V VGE=±15V RG=2.7W TC=125°C Inductive Load Switching Loss, Eton, Etoff (mJ/pulse) Switching Loss, Eton,Etoff, Err (mJ/pulse) 80 Eton 40 20 Etoff Eton Err 10 VCC=600V VGE=±15V IC =400A TC=125°C Inductive Load Err 0 0 100 200 300 400 1 500 1 Collector Current, IC (A) Switching loss vs. Collector current Transient Thermal Impedance, Rth(j-c) (°C/W) Collector Current, Ic (A) 1000 VGE=±15V RG=2.7W TC£125°C 100 10 1 0.1 0 200 400 600 800 1000 1200 1400 Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area 10 100 Gate Resistance, RG (W) Switching loss vs. Gate resistance 1 Diode 0.1 IGBT 0.01 0.001 0.001 0.01 0.1 1 10 Time, t (s) Transient thermal impedance PDE-N400GS12BW-0 HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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