GT50J327 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J327 Current Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.19 µs (typ.) (IC = 50A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A) • FRD included between emitter and collector • Fourth generation IGBT • TO-3P(N) (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±25 V @ Tc = 100°C Continuous collector current @ Tc = 25°C Pulsed collector current Diode forward current Collector power dissipation IC 29 50 ICP 100 DC IF 20 Pulsed IFP 40 @ Tc = 100°C @ Tc = 25°C Junction temperature PC 56 140 A A JEDEC A JEITA TOSHIBA W Tj 150 °C Tstg −55 to 150 °C Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 0.89 °C/W Thermal resistance (diode) Rth (j-c) 2.7 °C/W Storage temperature range 1.Gate 2.Collector(heatsink) 3.Emitter 2-16C1C Weight: 4.6 g (typ.) Thermal Characteristics Equivalent Circuit Marking Collector Part No. (or abbreviation code) TOSHIBA Gate GT50J327 Lot No. Emitter A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2005-02-09 GT50J327 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 1.0 mA VGE (OFF) IC = 50 mA, VCE = 5 V 3.0 6.0 V VCE (sat) IC = 50 A, VGE = 15 V 1.9 2.3 V VCE = 10 V, VGE = 0, f = 1 MHz 2500 pF Resistive Load 0.20 VCC = 300 V, IC = 50 A 0.27 VGG = ±15 V, RG = 39 Ω 0.19 0.32 0.44 Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies tr Rise time Switching time Turn-on time ton Fall time tf Turn-off time (Note 1) toff µs Diode forward voltage VF IF = 15 A, VGE = 0 2.0 V Reverse recovery time trr IF = 15 A, di/dt = −100 A/µs 0.2 µs Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 RG RL IC 0 90% VCC 0 90% 10% VCE 10% td (off) tf toff 2 tr ton 2005-02-09 GT50J327 IC – VCE 100 100 Common emitter 10 (A) 80 20 Common emitter 10 Tc = 25°C 15 9 Collector current IC (A) Tc = −40°C Collector current IC IC – VCE 60 40 8 20 15 9 80 20 60 8 40 VGE = 7 V 20 VGE = 7 V 0 0 1 2 3 4 Collector-emitter voltage VCE 0 0 5 (V) 1 100 10 9 VCE 5 (V) (A) 15 Common emitter VCE = 5 V 20 80 80 8 Collector current IC (A) Collector current IC 4 IC – VGE Common emitter Tc = 125°C 3 Collector-emitter voltage IC – VCE 100 2 60 VGE = 7 V 40 20 60 40 25 20 Tc = 125°C −40 0 0 1 2 3 Collector-emitter voltage 4 VCE 0 0 5 (V) 2 4 6 Gate-emitter voltage VGE 8 10 (V) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 4 Common emitter VGE = 15 V IC = 100 A 3 70 50 2 30 10 1 0 −40 0 40 80 Case temperature Tc 120 160 (°C) 3 2005-02-09 GT50J327 VCE, VGE – QG C – VCE RL = 6 Ω Tc = 25°C 16 12 VCE = 300 V 200 8 100 200 100 4 0 0 160 80 240 Gate charge QG 320 0 400 Gate-emitter voltage Collector-emitter voltage 300 Cies (V) 400 10000 Gate-emitter voltage VGE Common emitter 20 VCE (V) 500 1000 100 Common emitter f = 1 MHz 10 1 (nC) 10 (µs) toff ton tr Switching time (µs) Switching time 10 0.1 10 100 Gate resistance RG 1 ton tf 0.1 tr (Ω) 10 20 Collector current 40 IC 10 µs* IC max *: Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increases in temperature. (A) 10 ms* (continuous) 10 100 µs* 1 0.1 1 DC operation 10 1 ms* 100 Collector-emitter voltage 50 60 (A) Reverse Bias SOA Collector current IC (A) 30 1000 IC max (pulsed) * (V) toff 0.01 0 1000 1000 Collector current IC VCE Common emitter VCC = 300 V RG = 39 Ω VGG = ±15 V Tc = 25°C Safe Operating Area 100 1000 Switching Time – IC tf 0.01 1 100 Collector-emitter voltage Common emitter VCC = 300 V IC = 50 A VGG = ±15 V Tc = 25°C 1 Cres Tc = 25°C Switching Time – RG 10 Coes VGE = 0 1000 VCE 100 10 1 0.1 1 10000 (V) Tj < = 125°C VGG = 20 V RG = 39 Ω 10 100 Collector-emitter voltage 4 1000 VCE 10000 (V) 2005-02-09 GT50J327 ICmax – Tc 102 (°C/W) Common emitter VGE = 15 V rth (t) 50 40 Transient thermal impedance 30 20 10 50 75 100 Tc Case temperature 125 150 101 Diode stage 100 IGBT stage 10−1 10−2 10−3 10−5 10−4 10−3 (°C) 10−2 Pulse width (A) Common collector VGE = 0 (s) 50 500 30 300 30 20 Tc = 125°C 10 25 −40 0.4 0.8 1.2 Forward voltage VF 1.6 trr Peak reverse recovery current (A) Forward current IF 102 Irr 40 0 0 tw 101 Irr, trr – IF IF – VF 50 100 10−1 10 100 trr 5 3 50 Irr 1 0 2.0 (ns) 0 25 Tc = 25°C Common collector di/dt = −100 A/µs VGE = 0 Tc = 25°C 4 (V) 8 12 Forward current IF 16 30 Reverse recovery time Maximum DC collector current ICmax (A) 60 rth (t) – tw 10 20 (A) Irr, trr – di/dt Cj – VR 200 (ns) 50 trr 100 30 Reverse recovery time Junction capacitance Cj (pF) Tc = 25°C 10 5 3 1 1 3 5 10 30 50 100 Reverse voltage VR (V) 100 0 300 500 5 Peak reverse recovery current f = 1 MHz Irr (A) 300 Common collector IF = 15 A Tc = 25°C 10 trr 8 6 4 Irr 2 0 0 40 80 120 di/dt (A/µs) 160 200 2005-02-09 GT50J327 RESTRICTIONS ON PRODUCT USE • 030619EAA The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2005-02-09