SAMSUNG K4S560832D-TL1H

M366S3253DTS
PC133/PC100 Unbuffered DIMM
M366S3253DTS SDRAM DIMM
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
FEATURE
GENERAL DESCRIPTION
• Performance range
1 The Samsung M366S3253DTS is a 32M bit x 64 Synchronous
Dynamic RAM high density memory module. The Samsung
M366S325DCTS consists of eight CMOS 32M x 8 bit with 4banks
Synchronous DRAMs in TSOP-II 400mil package and a 2K
EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the
printed circuit board in parallel for each SDRAM.
The M366S325DCTS is a Dual In-line Memory Module and is
intended for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of
system clock. I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable latencies allows
the same device to be useful for a variety of high bandwidth, high
performance memory system applications.
Part No.
M366S3253DTS-L7C/C7C
M366S3253DTS-L7A/C7A
M366S3253DTS-L1H/C1H
M366S3253DTS-L1L/C1L
•
•
•
•
•
Burst mode operation
Auto & self refresh capability (8192 Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V ± 0.3V power supply
MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the
system clock
• Serial presence detect with EEPROM
• PCB : Height (1,375mil), single sided component
PIN CONFIGURATIONS (Front side/back side)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
VSS
DQ0
DQ1
DQ2
DQ3
VDD
DQ4
DQ5
DQ6
DQ7
DQ8
VSS
DQ9
DQ10
DQ11
DQ12
DQ13
VDD
DQ14
DQ15
*CB0
*CB1
VSS
NC
NC
VDD
WE
DQM0
PIN NAMES
Pin Front Pin
Back
Pin
Back
Pin
Back
29 DQM1 57 DQ18 85
58 DQ19 86
CS0
30
59
87
VDD
31
DU
60 DQ20 88
32
VSS
61
89
NC
33
A0
62 *VREF 90
34
A2
63 *CKE1 91
35
A4
64
92
VSS
36
A6
65 DQ21 93
37
A8
38 A10/AP 66 DQ22 94
67 DQ23 95
39
BA1
68
96
VSS
40
VDD
69 DQ24 97
41
VDD
42 CLK0 70 DQ25 98
71 DQ26 99
43
VSS
72 DQ27 100
44
DU
73
45
CS2
VDD 101
46 DQM2 74 DQ28 102
47 DQM3 75 DQ29 103
76 DQ30 104
48
DU
77 DQ31 105
49
VDD
78
50
VSS 106
NC
79 CLK2 107
51
NC
NC 108
52 *CB2 80
53 *CB3 81
*WP 109
82 **SDA 110
54
VSS
55 DQ16 83 **SCL 111
VDD 112
56 DQ17 84
VSS
DQ32
DQ33
DQ34
DQ35
VDD
DQ36
DQ37
DQ38
DQ39
DQ40
VSS
DQ41
DQ42
DQ43
DQ44
DQ45
VDD
DQ46
DQ47
*CB4
*CB5
VSS
NC
NC
VDD
CAS
DQM4
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
DQM5
*CS1
RAS
VSS
A1
A3
A5
A7
A9
BA0
A11
VDD
*CLK1
A12
VSS
CKE0
*CS3
DQM6
DQM7
*A13
VDD
NC
NC
*CB6
*CB7
VSS
DQ48
DQ49
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
DQ50
DQ51
VDD
DQ52
NC
*VREF
NC
VSS
DQ53
DQ54
DQ55
VSS
DQ56
DQ57
DQ58
DQ59
VDD
DQ60
DQ61
DQ62
DQ63
VSS
*CLK3
NC
**SA0
**SA1
**SA2
VDD
Pin Front Pin
Front
Max Freq. (Speed)
133MHz (7.5ns@CL=2)
133MHz (7.5ns@CL=3)
100MHz (6.0ns@CL=2)
100MHz (6.0ns@CL=3)
Pin Name
Function
A0 ~ A12
Address input (Multiplexed)
BA0 ~ BA1
Select bank
DQ0 ~ DQ63
Data input/output
CLK0, CLK2
Clock input
CKE0
Clock enable input
CS0, CS2
Chip select input
RAS
Row address strobe
CAS
Column address strobe
WE
Write enable
DQM0 ~ 7
DQM
VDD
Power supply (3.3V)
VSS
Ground
*VREF
Power supply for reference
SDA
Serial data I/O
SCL
Serial clock
SA0 ~ 2
Address in EEPROM
*WP
Write protection
DU
Don′t use
NC
No connection
* These pins are not used in this module.
** These pins should be NC in the system
which does not support SPD.
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
REV. 0.0 Jan. 2002
M366S3253DTS
PC133/PC100 Unbuffered DIMM
PIN CONFIGURATION DESCRIPTION
Pin
Name
Input Function
CLK
System clock
Active on the positive going edge to sample all inputs.
CS
Chip select
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
CKE
Clock enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
CKE should be enabled 1CLK+tSS prior to valid command.
A0 ~ A12
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA12, Column address : CA0 ~ CA9
BA0 ~ BA1
Bank select address
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
RAS
Row address strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
CAS
Column address strobe
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
WE
Write enable
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
DQM0 ~ 7
Data input/output mask
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active. (Byte masking)
DQ0 ~ 63
Data input/output
Data inputs/outputs are multiplexed on the same pins.
VDD/VSS
Power supply/ground
Power and ground for the input buffers and the core logic.
REV. 0.0 Jan. 2002
M366S3253DTS
PC133/PC100 Unbuffered DIMM
FUNCTIONAL BLOCK DIAGRAM
•
CS0
DQM0
DQM4
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
U0
DQM1
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U4
DQM5
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
U1
DQM CS
DQ0
DQ1
DQ2
U5
DQ3
DQ4
DQ5
DQ6
DQ7
•
CS2
DQM2
DQM6
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
U2
DQM3
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U6
DQM7
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
U3
U7
Serial PD
A0 ~ An, BA0 & 1
SDRAM U0 ~ U7
SCL
RAS
SDRAM U0 ~ U7
47KΩ
CAS
SDRAM U0 ~ U7
WE
SDRAM U0 ~ U7
CKE0
SDRAM U0 ~ U7
WP
A0
SDA
A1
SA0 SA1 SA2
10Ω
CLK0/2
•
VDD
•
•
Vss
Every DQpin of SDRAM
•
•
10Ω
•
•
U0/U2
U4/U6
•
10Ω
DQn
A2
U1/U3
U5/U7
1.5pF
CLK1/3
Two 0.1uF Capacitors
per each SDRAM
To all SDRAMs
10pF
REV. 0.0 Jan. 2002
M366S3253DTS
PC133/PC100 Unbuffered DIMM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
TSTG
-55 ~ +150
°C
Power dissipation
PD
8
W
Short circuit current
IOS
50
mA
Storage temperature
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
VDD, VDDQ
3.0
3.3
3.6
V
Input logic high voltage
VIH
2.0
3.0
VDDQ+0.3
V
1
Input logic low voltage
VIL
-0.3
0
0.8
V
2
Output logic high voltage
VOH
2.4
-
-
V
IOH = -2mA
Output logic low voltage
VOL
-
-
0.4
V
IOL = 2mA
ILI
-10
-
10
uA
3
Supply voltage
Input leakage current
Note
Notes : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
(VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)
CAPACITANCE
Pin
Address (A0 ~ A12, BA0 ~ BA1)
RAS, CAS, WE
Symbol
Min
Max
Unit
CADD
30
40
pF
CIN
30
40
pF
CKE (CKE0)
CCKE
30
40
pF
Clock (CLK0, CLK2)
CCLK
25
30
pF
CS (CS0, CS2)
CCS
16
25
pF
DQM (DQM0 ~ DQM7)
CDQM
8
10
pF
DQ (DQ0 ~ DQ63)
COUT
6
8
pF
REV. 0.0 Jan. 2002
M366S3253DTS
PC133/PC100 Unbuffered DIMM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Precharge standby current in power-down mode
Precharge standby current in non power-down
mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Symbol
ICC1
ICC2P
ICC2 PS
ICC2N
ICC2NS
ICC3P
ICC3 PS
ICC3N
ICC3NS
Version
Test Condition
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
-7C
-7A
-1H
-1L
800
720
720
720
CKE ≤ VIL(max), tCC = 10ns
16
CKE & CLK ≤ VIL(max), tCC = ∞
16
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
160
Unit
Note
mA
1
mA
mA
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
80
CKE ≤ VIL(max), tCC = 10ns
48
CKE & CLK ≤ VIL(max), tCC = ∞
48
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
240
mA
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
200
mA
Operating current
(Burst mode)
ICC4
IO = 0 mA
Page burst
4banks Activated.
tCCD = 2CLKs
Refresh current
ICC5
tRC ≥ tRC(min)
Self refresh current
ICC6
CKE ≤ 0.2V
880
880
mA
800
1,760 1,600
800
1,520 1,520
mA
1
mA
2
C
24
mA
L
12
mA
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).
REV. 0.0 Jan. 2002
M366S3253DTS
PC133/PC100 Unbuffered DIMM
AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C)
Parameter
AC input levels (Vih/Vil)
Value
Unit
2.4/0.4
V
1.4
V
tr/tf = 1/1
ns
1.4
V
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
See Fig. 2
3.3V
Vtt = 1.4V
1200Ω
50Ω
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
Output
870Ω
Output
Z0 = 50Ω
50pF
50pF
(Fig. 1) DC output load circuit
(Fig. 2) AC output load circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Version
Symbol
-7C
-7A
-1H
-1L
Unit
Note
Row active to row active delay
tRRD(min)
15
15
20
20
ns
1
RAS to CAS delay
tRCD(min)
15
20
20
20
ns
1
Row precharge time
tRP(min)
15
20
20
20
ns
1
Row active time
tRAS(min)
45
45
50
50
ns
1
tRAS(max)
Row cycle time
tRC(min)
Last data in to row precharge
tRDL(min)
Last data in to Active delay
100
ns
1
2
CLK
2, 5
tDAL(min)
2 CLK + tRP
-
5
Last data in to new col. address delay
tCDL(min)
1
CLK
2
Last data in to burst stop
tBDL(min)
1
CLK
2
Col. address to col. address delay
tCCD(min)
1
CLK
3
CAS latency=3
2
ea
4
CAS latency=2
1
Number of valid output data
60
65
us
70
70
Notes : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
5. In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported.
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
REV. 0.0 Jan. 2002
M366S3253DTS
PC133/PC100 Unbuffered DIMM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
Parameter
-7C
Symbol
Min
CLK cycle time
CAS latency=3
tCC
CAS latency=2
CLK to valid
output delay
Output data
hold time
CAS latency=3
7.5
Max
1000
7.5
tSAC
CAS latency=2
CAS latency=3
-7A
tOH
CAS latency=2
Min
7.5
-1H
Max
1000
10
-1L
Min
10
Max
1000
10
Min
10
Unit
Note
ns
1
ns
1,2
ns
2
Max
1000
12
5.4
5.4
6
6
5.4
6
6
7
3
3
3
3
3
3
3
3
CLK high pulse width
tCH
2.5
2.5
3
3
ns
3
CLK low pulse width
tCL
2.5
2.5
3
3
ns
3
Input setup time
tSS
1.5
1.5
2
2
ns
3
Input hold time
tSH
0.8
0.8
1
1
ns
3
CLK to output in Low-Z
tSLZ
1
1
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
CAS latency=2
tSHZ
5.4
5.4
6
6
5.4
6
6
7
ns
Notes : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
REV. 0.0 Jan. 2002
M366S3253DTS
PC133/PC100 Unbuffered DIMM
SIMPLIFIED TRUTH TABLE
Command
Register
Mode register set
Auto refresh
Refresh
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
H
X
L
L
L
L
X
OP code
L
L
L
H
X
X
H
Entry
Self
refresh
Exit
H
BA0,1
L
H
L
H
H
H
H
X
X
X
X
L
H
H
X
V
Read &
column address
Auto precharge disable
H
X
L
H
L
H
X
V
Write &
column address
Auto precharge disable
Auto precharge enable
X
L
H
L
L
X
H
X
L
H
H
L
X
H
X
L
L
H
L
X
H
L
Exit
L
H
Entry
H
L
Precharge power down mode
Exit
L
Column
address
(A 0 ~ A9)
V
L
Column
address
(A 0 ~ A9)
H
All banks
Entry
L
DQM
H
No operation command
H
H
H
X
X
X
L
V
V
V
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
X
X
H
X
X
X
L
H
H
H
3
Row address
H
Auto precharge enable
Clock suspend or
active power down
3
3
L
Bank selection
1,2
X
X
H
Note
3
H
Precharge
A12, A11,
A9 ~ A 0
L
Bank active & row addr.
Burst stop
A10/AP
X
V
L
X
H
4
4,5
4
4,5
6
X
X
X
X
X
X
X
V
X
X
X
7
(V=Valid, X=Don′t care, H=Logic high, L=Logic low)
Notes : 1. OP Code : Operand code
A0 ~ A12 & BA0 ~ BA1 : Program keys. (@ MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 clock cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected.
If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
REV. 0.0 Jan. 2002
M366S3253DTS
PC133/PC100 Unbuffered DIMM
PACKAGE DIMENSIONS
Units : Inches (Millimeters)
5.250
(133.350)
R 0.079
(R 2.000)
0.350
(8.890)
0.700
(17.780)
0.250
(6.350)
.450
(11.430)
C
0.100 Min
B
A
.118DIA ± 0.004
(3.000DIA ± 0.100)
0.250
(6.350)
1.450
(36.830)
2.150
(54.61)
(2.540 Min)
0.118
0.157 ± 0.004
(4.000 ± 0.100)
(3.000)
0.096
(2.44)
R 0.050+0.04
(R 1.27+0.1)
0.125
(3.175)
1.375
(34.925)
0.375
(9.525)
0.089
(2.26)
5.014
(127.350)
0.118
(3.000)
4.550
(115.57)
0.200 Min
(5.08 Min)
0.100 Max
(2.54 Max)
0.100 Min
0.250
(6.350)
0.250
(6.350)
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail A
(2.540 Min)
0.050 ± 0.0039
(1.270 ± 0.10)
0.039 ± 0.002
(1.000 ± 0.050)
0.123 ± 0.005
(3.125 ± 0.125)
0.079 ± 0.004
(2.000 ± 0.100)
Detail B
0.008 ± 0.006
(0.200 ± 0.150)
0.050
(1.270)
Detail C
Tolerances : ± .005(.13) unless otherwise specified
The used device is 32Mx8 SDRAM, TSOP
SDRAM Part No. : K4S560832D
REV. 0.0 Jan. 2002
M366S3253DTS
PC133/PC100 Unbuffered DIMM
M366S3253DTS-L7C/L7A/L1H/L1L, C7C/C7A/C1H/C1L
• Organization : 32MX64
• Composition : 32MX8 *8
• Used component part # : K4S560832D-TL7C/7A/1H/1L,TC7C/7A/1H/1L
• # of rows in module : 1row
• # of banks in component : 4 banks
• Feature : 1,375 mil height & single sided component
• Refresh : 8K/64ms
• Contents :
Byte#.
Function Supported
Function described
-7C
0
# of bytes written into serial memory at module manufacturer
1
Total # of bytes of SPD memory device
2
Fundamental memory type
3
4
5
-7A
Hex value
-1H
-1L
-7C
-7A
-1H
Note
-1L
128bytes
80h
256bytes (2K-bit)
08h
SDRAM
04h
# of row address on this assembly
13
0Dh
1
# of column address on this assembly
10
0Ah
1
# of module Rows on this assembly
1 Row
01h
6
Data width of this assembly
64 bits
40h
7
...... Data width of this assembly
-
00h
8
Voltage interface standard of this assembly
LVTTL
01h
9
SDRAM cycle time from clock @CAS latency of 3
7.5ns
7.5ns
10ns
10ns
75h
75h
A0h
A0h
2
10
SDRAM access time from clock @CAS latency of 3
5.4ns
5.4ns
6ns
6ns
54h
54h
60h
60h
2
11
DIMM configuration type
12
Refresh rate & type
13
Primary SDRAM width
14
Error checking SDRAM width
15
Minimum clock delay for back-to-back random column
16
SDRAM device attributes : Burst lengths supported
17
SDRAM device attributes : # of banks on SDRAM device
18
SDRAM device attributes : CAS latency
19
SDRAM device attributes : CS latency
20
SDRAM device attributes : Write latency
21
SDRAM module attributes
22
SDRAM device attributes : General
Non parity
00h
7.8us, support self refresh self
82h
x8
08h
None
00h
tCCD = 1CLK
01h
1, 2, 4, 8 & full page
8Fh
4 banks
04h
2&3
06h
0 CLK
01h
0 CLK
01h
Non-buffered/Non-Registered &
00h
redundant addressing
+/- 10% voltage tolerance,
0Eh
Burst Read Single bit Write
precharge all, auto precharge
23
SDRAM cycle time @CAS latency of 2
7.5ns
10ns
10ns
12ns
75h
A0h
A0h
C0h
2
24
SDRAM access time @CAS latency of 2
5.4ns
6ns
6ns
7ns
54h
60h
60h
70h
2
25
SDRAM cycle time @CAS latency of 1
-
00h
26
SDRAM access time @CAS latency of 1
-
00h
27
Minimum row precharge time (=tRP)
15ns
20ns
20ns
20ns
0Fh
14h
2
2
14h
14h
28
Minimum row active to row active delay (tRRD)
15ns
15ns
20ns
20ns
0Fh
0Fh
14h
14h
29
Minimum RAS to CAS delay (=tRCD)
15ns
20ns
20ns
20ns
0Fh
14h
14h
14h
30
Minimum activate precharge time (=tRAS)
45ns
45ns
50ns
50ns
2Dh
2Dh
32h
32h
31
Module Row density
32
Command and Address signal input setup time
20h
20h
1 Row of 128MB
1.5ns
1.5ns
2ns
40h
2ns
15h
15h
33
Command and Address signal input hold time
0.8ns
0.8ns
1ns
1ns
08h
08h
10h
10h
34
Data signal input setup time
1.5ns
1.5ns
2ns
2ns
15h
15h
20h
20h
REV. 0.0 Jan. 2002
M366S3253DTS
PC133/PC100 Unbuffered DIMM
SERIAL PRESENCE DETECT INFORMATION
Byte #
35
36~61
Data signal input hold time
SPD data revision code
63
Checksum for bytes 0 ~ 62
64
-7C
-7A
0.8ns
0.8ns
Superset information (maybe used in future)
62
65~71
Function Supported
Function described
Hex value
-1H
-1L
-7C
-7A
1ns
1ns
08h
08h
-
Note
-1H
-1L
10h
10h
39h
69h
00h
Current release Intel spd 1.2B/A
-
12h
91h
D2h
Manufacturer JEDEC ID code
Samsung
CEh
...... Manufacturer JEDEC ID code
Samsung
00h
Onyang Korea
01h
72
Manufacturing location
73
Manufacturer part # (Memory module)
M
4Dh
74
Manufacturer part # (DIMM configuration)
3
33h
75
Manufacturer part # (Data bits)
Blank
20h
76
...... Manufacturer part # (Data bits)
6
36h
77
...... Manufacturer part # (Data bits)
6
36h
78
Manufacturer part # (Mode & operating voltage)
S
53h
79
Manufacturer part # (Module depth)
3
33h
80
...... Manufacturer part # (Module depth)
2
32h
81
Manufacturer part # (Refresh, # of banks in Comp. & inter-
5
35h
82
Manufacturer part # (Composition component)
3
33h
83
Manufacturer part # (Component revision)
D
44h
84
Manufacturer part # (Package type)
T
54h
85
Manufacturer part # (PCB revision & type)
S
53h
86
Manufacturer part # (Hyphen)
"-"
2Dh
87
Manufacturer part # (Power)
88
Manufacturer part # (Minimum cycle time)
7
7
1
1
37h
37h
31h
31h
89
Manufacturer part # (Minimum cycle time)
C
A
H
L
43h
41h
48h
4Ch
90
Manufacturer part # (TBD)
91
Manufacturer revision code (For PCB)
92
...... Manufacturer revision code (For component)
93
Manufacturing date (Year)
-
-
3
94
Manufacturing date (Week)
-
-
3
95~98
Assembly serial #
99~12
Manufacturer specific data (may be used in future)
L/C
4Ch / 43h
Blank
20h
S
53h
D-die (5th Gen.)
44h
-
-
4
Undefined
-
5
100MHz
64h
126
System frequency for 100MHz
127
Intel Specification details
Detailed 100MHz Information
128+
Unused storage locations
Undefined
AFh
AFh
AFh
-
ADh
5
Note : 1. The bank select address is excluded in counting the total # of addresses.
2. This value is based on the component specification.
3. These bytes are programmed by code of Date Week & Date Year with BCD format.
4. These bytes are programmed by Samsung ′s own Assembly Serial # system. All modules may have different unique serial #.
5. These bytes are Undefined and can be used for Samsung ′s own purpose.
REV. 0.0 Jan. 2002