CS223-4M CS223-4N SURFACE MOUNT 4 AMP SILICON SCR 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=85°C) Peak One Cycle Surge, t=10ms SYMBOL CS223-4M CS223-4N UNITS VDRM, VRRM IT(RMS) 600 800 V I2t Value for Fusing, t=10ms Peak Gate Power, tp=20μs 4.0 ITSM I2t PGM PG (AV) Average Gate Power Dissipation Peak Gate Current, tp=20μs A 30 A 4.5 A2s 3.0 W 0.2 W IGM di/dt 1.2 A 50 A/μs -40 to +125 °C Storage Temperature TJ Tstg -40 to +150 °C Thermal Resistance ΘJA 62.5 °C/W Critical Rate of Rise of On-State Current Operating Junction Temperature ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IDRM, IRRM IRRM Rated VDRM, Rated VDRM, TYP MAX UNITS 10 μA 200 μA 200 μA 0.25 2.0 mA 0.55 0.8 V 1.6 1.8 VRRM, RGK=1KΩ VRRM, RGK=1KΩ, TC=125°C IGT IH VD=12V, RL=10Ω IT=50mA, RGK=1KΩ VGT VTM VD=12V, RL=10Ω ITM=8.0A, tp=380μs dv/dt VD=2 /3 VDRM, RGK=1KΩ, TC=125°C 20 10 38 V V/μs R1 (12-February 2010) CS223-4M CS223-4N SURFACE MOUNT 4 AMP SILICON SCR 600 THRU 800 VOLTS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER R1 (12-February 2010) w w w. c e n t r a l s e m i . c o m