CTLSH1-40M621H SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH1-40M621H is a very low profile (0.4mm), low VF Schottky rectifier in a small, thermally efficient, 1.5mm x 2mm Tiny Leadless Module (TLM) package. MARKING CODE: CNE TLM621H CASE • Device is Halogen Free by design APPLICATIONS: FEATURES: • DC/DC Converters • Reverse Battery Protection • Battery powered devices including Cell Phones, PDAs, Digital Cameras, MP3 Players, etc. • High Current (IF=1.0A) • Low Forward Voltage Drop (VF=0.55V MAX @ 1.0A) • High Thermal Efficiency MAXIMUM RATINGS: (TA=25°C) SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg ΘJA Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp<1.0ms Peak Forward Surge Current, tp=8.0ms Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance (Note 1) UNITS V A A A W °C °C/W 40 1.0 3.5 6.0 1.6 -65 to +150 75 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR VR=5.0V 10 μA IR VR=8.0V 20 μA IR VR=15V 50 μA IR VR=40V 0.2 mA IR VR=40V, TA=100°C IR=100μA 20 mA BVR VF IF=10mA 0.30 V VF IF=100mA 0.40 V VF IF=500mA 0.50 V VF IF=1.0A 0.60 V CJ VR=4.0V, f=1.0MHz 50 pF trr IF=IR=500mA, Irr=50mA, RL=50Ω 15 ns 40 Notes: (1) Mounted on a 4-layer JEDEC test board with one thermal vias connecting the exposed thermal pad to the first buried plane. PCB was constructed as per JEDEC standards JESD51-5 and JESD51-7. V R4 (19-February 2010) CTLSH1-40M621H SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY RECTIFIER TLM621H CASE - MECHANICAL OUTLINE OPTIONAL MOUNTING PADS (Dimensions in mm) *Exposed pad P internally connected to pins 2, 3, 4, and 5. For standard mounting refer to TLM621H Package Details PIN CONFIGURATION LEAD CODE: 1) Anode 2) Cathode 3) Cathode 4) Cathode 5) Cathode 6) Anode MARKING CODE: CNE R4 (19-February 2010) w w w. c e n t r a l s e m i . c o m