FAIRCHILD TIP42C_09

TIP42/TIP42A/TIP42B/TIP42C
PNP Epitaxial Silicon Transistor
Features
• Medium Power Linear Switching Applications
• Complement to TIP41/TIP41A/TIP41B/TIP41C
TO-220
1
1.Base
Absolute Maximum Ratings
Symbol
2.Collector
3.Emitter
TA=25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
: TIP42
: TIP42A
: TIP42B
: TIP42C
- 40
- 60
- 80
- 100
V
V
V
V
VCEO
Collector-Emitter Voltage
: TIP42
: TIP42A
: TIP42B
: TIP42C
- 40
- 60
- 80
- 100
V
V
V
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-6
A
ICP
Collector Current (Pulse)
-10
A
IB
Base Current
-2
A
PC
Collector Dissipation (TC=25°C)
65
W
Collector Dissipation (TA=25°C)
2
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 to 150
°C
© 2009 Fairchild Semiconductor Corporation
TIP42/TIP42A/TIP42B/TIP42C Rev. B0
www.fairchildsemi.com
1
TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor
December 2009
TA=25°C unless otherwise noted
Symbol
Parameter
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: TIP42
: TIP42A
: TIP42B
: TIP42C
ICEO
Test Condition
IC = -30mA, IB = 0
Min.
Max.
-40
-60
-80
-100
Units
V
V
V
V
Collector Cut-off Current
: TIP42/42A
: TIP42B/42C
VCE = -30V, IB = 0
VCE = -60V, IB = 0
-0.7
-0.7
mA
mA
Collector Cut-off Current
: TIP42
: TIP42A
: TIP42B
: TIP42C
VCE = -40V, VEB = 0
VCE = -60V, VEB = 0
VCE = -80V, VEB = 0
VCE = -100V, VEB = 0
-400
-400
-400
-400
μA
μA
μA
μA
IEBO
Emitter Cut-off Current
VEB = -5V, IC = 0
-1
mA
hFE
* DC Current Gain
VCE = -4V, IC = -0.3A
VCE = -4V, IC = -3A
ICES
30
15
75
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = -6A, IB = -600mA
-1.5
V
VBE(sat)
* Base-Emitter Saturation Voltage
VCE = -4V, IC = -6A
-2.0
V
fT
Current Gain Bandwidth Product
VCE = -10V, IC = -500mA,
f = 1MHz
3.0
MHz
* Pulse Test: PW≤300μs, Duty Cycle≤2%
© 2009 Fairchild Semiconductor Corporation
TIP42/TIP42A/TIP42B/TIP42C Rev. B0
www.fairchildsemi.com
2
TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor
Electrical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
hFE, DC CURRENT GAIN
VCE = -4V
100
10
1
-0.01
-0.1
-1
-10
-2.0
IC/IB = 10
-1.6
VBE(sat)
-1.2
-0.8
VCE(sat)
-0.4
-0.0
-0.01
-0.1
IC[A], COLLECTOR CURRENT
-10
-100
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
PC[W], POWER DISSIPATION
-100
IC(MAX) (PULSE)
-10
ms
0.5
s
5m
IC(MAX) (DC)
s
1m
IC[A], COLLECTOR CURRENT
-1
-1
TIP42
TIP42A
TIP42B
TIP42C
-10
40
20
0
-100
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
Figure 4. Power derating
© 2009 Fairchild Semiconductor Corporation
TIP42/TIP42A/TIP42B/TIP42C Rev. B0
60
0
-0.1
-1
80
www.fairchildsemi.com
3
TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor
Mechanical Dimensions
TO-220
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
TIP42/TIP42A/TIP42B/TIP42C Rev. B0
www.fairchildsemi.com
4
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com