FAIRCHILD MJD44H11_09

MJD44H11
NPN Epitaxial Silicon Transistor
•
•
•
•
•
•
•
General Purpose Power and Switching Such as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, "- I" Suffix)
Electrically Similar to Popular MJE44H
Fast Switching Speeds
Low Collector Emitter Saturation Voltage
1
D-PAK
1.Base
1
2.Collector
I-PAK
3.Emitter
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
80
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
8
A
ICP
Collector-Current (Pulse)
16
A
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Max.
Units
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Tc = 25°C
20
Ta = 25°C
1.75
PD
Total Device Dissipation
RθJC
Thermal Resistance, Junction to Case
6.25
°C/W
RθJA
Thermal Resistance, Junction to Ambient
71.4
°C/W
© 2009 Fairchild Semiconductor Corporation
MJD44H11 Rev. B1
W
www.fairchildsemi.com
1
MJD44H11 — NPN Epitaxial Silicon Transistor
March 2009
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
VCEO(sus)
*Collector-Emitter Sustaining Voltage
IC = 30mA, IB = 0
ICEO
Collector Cut-off Current
VCE = 80V, IB = 0
10
μA
IEBO
Emitter Cut-off Current
VBE = 5V, IC = 0
50
μA
hFE
*DC Current Gain
VCE = 1V, IC = 2A
VCE = 1V, IC = 4A
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 8A, IB = 0.4A
1
V
VBE(on)
*Base-Emitter On Voltage
IC = 8A, IB = 0.8A
1.5
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
50
MHz
Cob
Output Capacitance
VCB =10V, f = 1MHz
130
pF
tON
Turn On Time
300
ns
500
ns
140
ns
tSTG
Storage Time
tF
Fall Time
IC = 5A
IB1 = - IB2 = 0.5A
80
Units
V
60
40
* Pulse Test: PW≤300μs, Duty Cycle≤2%
© 2009 Fairchild Semiconductor Corporation
MJD44H11 Rev. B1
www.fairchildsemi.com
2
MJD44H11 — NPN Epitaxial Silicon Transistor
Electrical Characteristics Ta = 25°C unless otherwise noted
100
1000
IC[A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
VCE = 1V
100
10
ICP(max)
10
10
IC(max)
1
50
1m
s
5m
DC s
0μ
0μ
s
s
0.1
0.01
1
0.01
0.1
1
1
10
IC[A], COLLECTOR CURRENT
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. DC current Gain
Figure 2. Safe Operating Area
PC[W], POWER DISSIPATION
25
20
15
10
5
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 3. Power Derating
© 2009 Fairchild Semiconductor Corporation
MJD44H11 Rev. B1
www.fairchildsemi.com
3
MJD44H11 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
MJD44H11 — NPN Epitaxial Silicon Transistor
Mechanical Dimensions
±0.10
0.50
±0.10
1.02
±0.20
2.30
±0.20
(3.05)
(2XR0.25)
(0.10)
2.70 ±0.20
6.10 ±0.20
9.50 ±0.30
0.50
MIN0.55
2.30TYP
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
±0.10
(1.00)
±0.10
2.30
(0.90)
0.76
0.91 ±0.10
(0.50)
9.50 ±0.30
(4.34)
6.10 ±0.20
±0.30
(0.70)
2.30TYP
[2.30±0.20]
5.34
0.89 ±0.10
MAX0.96
±0.20
2.70 ±0.20
0.80 ±0.20
0.60 ±0.20
(0.50)
6.60
0.70 ±0.20
D-PAK
0.76
±0.10
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
MJD44H11 Rev. B1
www.fairchildsemi.com
4
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I39
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com