FAIRCHILD FPAM50LH60

TM
Motion-SPM
FPAM50LH60
Smart Power Module for 2-phase Interleaved PFC
Features
Applications
• Single phase rectifier for AC input
System air conditioner
• 2-phase interleaved PFC
General Description
• Control IC for gate driving and protection
FPAM50LH60 is an advanced smart power module of 2-phase
interleaved PFC(Power Factor Correction). It combines
optimized drive circuit with low-loss IGBTs and using DBC
which has low thermal resistance. System reliability is further
enhanced by the integrated under-voltage lock-out, over-current
protection, and built-in NTC thermistor for monitoring overtemperature.
• Built-in NTC thermistor for monitoring over-temperature
• Low thermal resistance due to DBC substrate
• Isolation lating of 2500Vrms /min
• UL Certified No.E209024
Figure 1.
©2012 Fairchild Semiconductor Corporation
FPAM50LH60 Rev. C
1
www.fairchildsemi.com
FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC
January 2012
• For IGBTs : Gate drive circuit, Over Current protection(SC), Control supply circuit under-voltage(UV) protection
• Fault signal : Corresponding to SC and UV fault
• Built-in thermistor: Over-temperature monitoring
• Input interface : 3.3/5V CMOS/LSTTL compatible
Pin Configuration
Top View
(1)CSC
(2)COM
(3)VFO
(4)INX
(5)INY
(6)COM
(7)n.c.
(8)VCC
(9)VCC
(10)COM
(24)P
(25)P
(26)PY
(27)n.c.
(28)PX
(11)RTH
(12)VTH
(29)X
(13)NR
(14)NR
(30)Y
(15)n.c.
(16)n.c.
(17)n.c.
(31)NP
Case temperature(TC)
detecting point
(18)R
(19)R
(20)n.c.
(21)n.c.
(32)PR
(22)S
(23)S
Dimension unit: millimeter
Figure 2.
2
FPAM50LH60 Rev. C
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FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC
Integrated Drive, Protection and System Control Functions
FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC
Pin Descriptions
Pin Number
Pin Name
Pin Description
1
CSC
Signal input for over current detection
2,6,10
COM
Common supply ground
3
VFO
Fault out
4
INX
PWM input for X IGBT drive
5
INY
PWM input for Y IGBT drive
7
n.c.
8,9
VCC
Common supply voltage of IC for IGBT drive
11
RTH
Thermister
12
V TH
Thermister
13,14
NR
Negative DC-link of Rectifier Diode
15,16,17
n.c.
18,19
R
20,21
n.c.
AC input for R phase
22,23
S
AC input for S phase
24,25
P
Output of Diode
26
PY
Input of Diode
27
n.c.
28
PX
Input of Diode
29
X
Output of X phase IGBT
30
Y
Output of Y phase IGBT
31
NP
Negative DC-link of IGBT
32
PR
Positive DC-link of Rectifier Diode
Internal Equivalent Circuit
(11)RTH
(24)(25)P
THERMISTOR
(12)VTH
(1)CSC
(3)VFO
(4)INX
(5)INY
(8)(9)VCC
(2)(6)(10)
COM
(26)PY
(28)PX
CSC
(29)X
VFO
(30)Y
INX
INY
OUT X
(32)PR
VCC
(18)(19)R
OUT Y
(22)(23)S
COM
(31)NP
(13)(14)NR
Figure 3. Internal Block Diagram
3
FPAM50LH60 Rev. C
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Converter Part
Symbol
Vi
VPN
VPN(Surge)
Parameter
Conditions
Rating
Units
Input Supply Voltage
Applied between R-S
264
Vrms
Output Voltage
Applied between X-NP,Y-NP, P-P X, P-PY
450
V
Output Supply Voltage (Surge)
Applied between X-NP,Y-NP, P-P X, P-PY
500
V
VCES
Collector-emitter Voltage
Breakdown Voltage between X-N P,Y-N P
600
V
VRRM
Repetitive Peak Reverse Voltage of FRD Breakdown Voltage between P-P X, P-PY
600
V
VRRMR
Repetitive Peak Reverse Voltage of Rec- Breakdown Voltage between P R-R, PR-S,
tifier
R-NR, S-NR
900
V
FRD Forward Current
TC = 25°C, TJ < 125°C
50
A
Peak Surge Current of FRD
Non-repetitive, 60Hz single half-sine wave
500
A
Rectified Forward Current
TC = 25°C, TJ < 125°C
50
A
*IF
*IFSM
*IFR
*IFSMR
Peak Surge Current of Rectifier
Non-repetitive, 60Hz single half-sine wave
500
A
± *IC
Each IGBT Collector Current
TC = 25°C, TJ < 125°C
50
A
± *ICP
Each IGBT Collector Current(Peak)
TC = 25°C, TJ < 125°C,
Under 1ms pulse width
100
A
Collector Dissipation
TC =25°C per single IGBT
Operating Junction Temperature
(Note 1)
*P C
TJ
135
W
-40~125
°C
Note:
1. The maximum junction temperature rating of the power chips integrated within the SPM is 125°C.
2. Marking “ * “ is calculation value or design factor.
Control Part
Symbol
Parameter
Conditions
Rating
Units
VCC
Control Supply Voltage
Applied between V CC - COM
20
V
VIN
Input Signal Voltage
Applied between IN X, INY - COM
-0.3 ~ VCC+0.3
V
VFO
Fault Output Supply Voltage
Applied between V FO - COM
-0.3 ~ VCC+0.3
V
IFO
Fault Output Current
Sink Current at V FO Pin
1
mA
VSC
Current Sensing Input Voltage Applied between CSC - COM
-0.3 ~ VCC+0.3
V
Total System
Symbol
Parameter
TSTG
Storage Temperature
V ISO
Isolation Voltage
Conditions
Rating
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to heat sink plate
Units
-40 ~ 125
°C
2500
Vrms
Thermal Resistance
Symbol
Rth(j-c)Q
Rth(j-c)D
Parameter
Junction to Case Thermal
Resistance
Rth(j-c)R
Condition
Typ. Max. Units
Each IGBT under Operating Condition
-
-
0.74
°C/W
Each Diode under Operating Condition
-
-
1.13
°C/W
Each Rectifier under Operating Condition
-
-
0.74
°C/W
4
FPAM50LH60 Rev. C
Min.
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FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC
Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Converter Part
Symbol
Parameter
V CE(SAT)
Conditions
Min.
Typ.
Max.
Units
IGBT Saturation Voltage
V CC = 15V, VIN = 5V, IC = 50A
-
1.7
2.2
V
V FF
FRD Forward Voltage
IF = 50A
-
1.9
2.4
V
VFR
Rectifier Forward Voltage
IFR = 50A
-
1.13
1.35
V
IRR
Switching Characteristic
V PN = 400V, VCC = 15V, IC = 25A,
V IN = 0V « 5V, Inductive Load (Note 3), per
single IGBT
-
27
-
A
-
45
-
ns
tON
tRR
-
772
-
ns
tOFF
-
1117
-
ns
tC(ON)
-
110
-
ns
-
125
-
ns
-
-
250
mA
tC(OFF)
ICES
Collector-Emitter
Leakage Current
V CES =600V
Note:
3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
Control Part
Symbol
Parameter
Conditions
Min.
Typ.
Max. Units
IQCC
Quiescent VCC Supply
Current
VCC = 15V, INX, INY - COM = 0V, Supply current
between V CC and COM
-
-
2.65
mA
IPCC
Operating V CC Supply
Current
VCC = 15V, fPWM = 20kHz, duty=50%, applied to
one PWM signal input per single IGBT, Supply
current between VCC and COM
-
-
7.0
mA
V FOH
Fault Output Voltage
VSC = 0V, V FO Circuit: 10kW to 5V Pull-up
4.5
-
-
V
-
-
0.5
V
VSC(Ref)
VFOL
Over-Current Protection Trip VCC = 15V
Level Voltage of CSC pin
0.45
0.5
0.55
V
UVCCD
Supply Circuit UnderVoltage Protection
Detection Level
10.5
-
13.0
V
Reset Level
11.0
-
13.5
V
30
-
-
ms
UVCCR
VSC = 1V, V FO Circuit: 10kW to 5V Pull-up
tFOD
Fault-out Pulse Width
V IN(ON)
ON Threshold Voltage
Applied between INX, INY - COM
2.6
-
-
V
VIN(OFF)
OFF Threshold Voltage
Applied between INX, INY - COM
-
-
0.8
V
Resistance of Thermistor
@ TTH = 25°C (Figure 5)(Note 4)
-
47
-
kW
@ TTH = 100°C (Figure 5)(Note 4)
-
2.9
-
kW
RTH
Note:
4. TTH is the temperature of thermister itself. To know case temperature ( TC), please make the experiment considering your application.
5
FPAM50LH60 Rev. C
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FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC
.
100% IC
tRR
100% IC
IRR
VCE
IC
90% IC
10% IC
10% V CE
10% V CE
10% IC
V IN
tON
tOFF
tC(OFF)
tC(ON)
(a) turn-on
(b) turn-off
Figure 4. Switching Time Definition
R-T Curve
200
4
Resistance RTH[k]
Resistance RTH[k]
150
100
3
2
1
95
100
105
110
115
120
125
Temperature TTH[degC]
50
0
0
25
50
75
100
125
Temperature TTH[degC]
Figure 5. R-T Curve of The Built-in Thermistor
6
FPAM50LH60 Rev. C
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Symbol
Parameter
Value
Conditions
Vi
Input Supply Voltage
Applied between R - S
Ii
Input Current
TC <90°C, Vi=220V, VO=360V,
fPWM=20kHz per each IGBT
V PN
Supply Voltage
Applied between X-NP, Y-NP, P-PX, P-PY
VCC
Control Supply Voltage
Applied between V CC - COM
dVCC/dt
IFO
fPWM
Supply Variation
Units
Min.
Typ.
Max.
187
-
253
Vrms
-
-
35
Arms
-
-
400
V
13.5
15
16.5
V
-1
-
1
V/ms
Fault Output Current
Sink Current at V FO Pin
-
-
1
mA
PWM Input Frequency
-40°C<TJ <125°C per single IGBT
-
20
-
kHz
Mechanical Characteristics and Ratings
Parameter
Limits
Conditions
Mounting Torque
Mounting Screw: M4
Device Flatness
Refer to Figure 6
Units
Min.
Typ.
Max.
Recommended 0.98N•m
0.78
0.98
1.17
N•m
Recommended 10kg•cm
8
10
12
kg•cm
0
-
+150
mm
-
32
-
g
Weight
Figure 6. Flatness Measurement Position
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FPAM50LH60
FPAM50LH60
SPM32-EA
-
-
8
7
FPAM50LH60 Rev. C
www.fairchildsemi.com
FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC
Recommended Operating Conditions (TJ = 25°C, Unless Otherwise Specified)
Input Signal
Protection
Circuit State
RESET
SET
RESET
UVCCR
a1
Control
Supply Voltage
UVCCD
a6
a3
a2
a7
a4
Output Current
a5
Fault Output Signal
a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when the next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under voltage reset (UVCCR ).
a7 : Normal operation: IGBT ON and carrying current.
Figure 7. Under-Voltage Protection
Input Voltage (VIN)
c6
c7
(with the external over current detection circuit)
c1 : Normal operation: IGBT ON and carrying current.
Internal IGBT
Gate-Emitter Voltage
c3
c4
c2 : Over current detection (OC trigger).
c3 : Hard IGBT gate interrupt.
c2
c4 : IGBT turns OFF.
OC
c5 : Fault output timer operation starts.
c6 : Input “L” : IGBT OFF state.
c7 : Input “H”: IGBT ON state, but during the active period of
fault output the IGBT doesn’t turn ON.
c1
c8
Output Current
Input signal to CSC
pin for Protection
Fault Output Signal
c8 : IGBT OFF state
SET
RESET
c5
Figure 8. Over Current Protection
8
FPAM50LH60 Rev. C
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FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC
Time Charts of Protective Function
Current sensing
RT
current protection
R TH
P
THERMISTOR
V TH
+5V
RSCF
Controller
RFO
CSCF
PX
PY
CSC
X
VFO
CF
RF
CF
RF
Y
L
INX
OUT X
PR
INY
+15V
VCC
L
R
OUT Y
VDC
VAC
S
COM
DY
NP
DX
NR
Note:
1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2~3cm)
2. VFO output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1mA.
3. Input signal is High-Active type. There is a 5kΩ resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of
input signal oscillation. RF CF constant should be selected in the range 50~150ns. (Recommended RF=100 Ω , CF=1nF)
4. To prevent error of the protection function, the wiring related with RSCF and CSCF should be as short as possible.
5. In the over current protection circuit, please select the RSCF , CSCF time constant in the range 1.5~2 μs.
6. Each capacitors should be mounted as close to the SPM pins as possible.
7. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.
8. Internal NTC thermistor can be used for monitoring of the case temperature and protecting the device from the overheating operation. Select an appropriate resistor RT
according to the application.
9. It is recommended that anti-parallel diode(DX ,DY) be connected with each IGBT.
Figure 9. Typical Application Circuit
9
FPAM50LH60 Rev. C
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FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC
+5V
Input signal for over
FPAM50LH60 Smart Power Module for 2-phase Interleaved PFC
Detailed Package Outline Drawings
Dimension unit: millimeter
10
FPAM50LH60 Rev. C
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As used herein:
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1. Life support devices or systems are devices or systems which, (a)
system whose failure to perform can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I61
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