ISC 2SC4512

Inchange Semiconductor
Product Specification
2SC4512
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SA1726
APPLICATIONS
・Audio and General Purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
6
A
IB
Base current
3
A
PC
Collector dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC4512
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA; RBE=∞
VCE(sat)
Collector-emitter saturation voltage
IC=5A; IB=0.2A
0.5
V
ICBO
Collector cut-off current
VCB=120V ;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
μA
hFE
DC current gain
IC=2A ; VCE=4V
COB
Collertor output capacitance
f=1MHz; VCB=10V
110
pF
Transition frequency
IE=-0.5A ; VCE=12V
20
MHz
0.16
μs
2.60
μs
0.34
μs
fT
CONDITIONS
MIN
TYP.
MAX
80
UNIT
V
50
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
VCC=30V; IC=3A
IB1=-IB2=0.3A
RL=10Ω
Fall time
hFE Classifications
O
P
Y
50-100
70-140
90-180
2
Inchange Semiconductor
Product Specification
2SC4512
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SC4512
Silicon NPN Power Transistors
4