ISC 2SA1262

Inchange Semiconductor
Product Specification
2SA1262
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SC3179
APPLICATIONS
·Audio and general purpose
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-4
A
IB
Base current
-1
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA1262
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ,IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-0.6
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-100
μA
hFE
DC current gain
IC=-1A ; VCE=-4V
fT
Transition frequency
IE=0.2A ; VCE=-12V
15
MHz
Cob
Output capacitance
IE=0 ; VCB=-10V ;f=1MHz
90
pF
0.25
μs
0.75
μs
0.25
μs
-60
UNIT
V
40
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-2A ;IB1=- IB2=-0.2A
RL=10Ω;VCC=-20V
2
Inchange Semiconductor
Product Specification
2SA1262
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SA1262
Silicon PNP Power Transistors
4