ISC 2SD1351

Inchange Semiconductor
Product Specification
2SD1351
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·Complement to type 2SB988
·Low collector saturation voltage
APPLICATIONS
·For general purpose application
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
7
V
3
A
0.5
A
IC
Collector current
IB
Base current
PC
Collector dissipation
Ta=25℃
2
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
Inchange Semiconductor
Product Specification
2SD1351
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.2A
0.25
1.0
V
VBE
Base-emitter on voltage
IC=0.5A ; VCE=5V
0.7
1.0
V
ICBO
Collector cut-off current
VCB=60V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=0.5A ; VCE=5V
Cob
Output capacitance
IE=0; VCB=10V,f=1MHz
35
pF
fT
Transition frequency
IC=0.5A ; VCE=5V
3.0
MHz
0.65
μs
1.30
μs
0.65
μs
60
UNIT
V
60
300
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
IB1=-IB2=0.2A
VCC=30V;RL=15Ω
Duty cycle≤1%
Fall time
hFE Classifications
O
Y
GR
60-120
100-200
150-300
2
Inchange Semiconductor
Product Specification
2SD1351
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3