MegaMOSTMFET IRFP 360 VDSS = 400 V = 23 A ID25 RDS(on) = 0.20 Ω N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ 400 400 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID100 IDM IAR TC = 25°C TC = 100°C TC = 25°C, pulse width limited by TJM 23 14 92 23 A A A A EAR TC = 25°C 30 mJ dv/dt IS ≤ IDM, di/dt TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 6 g 300 °C TJ TJM T stg Md Mounting torque Weight Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features • • • • • Fast switching times International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commuting dv/dt rating Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 400 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V V 4 V ±100 nA 25 250 µA µA 0.20 Ω • • • • Advantages • R DS(on) TJ = 25°C TJ = 125°C VGS = 10 V, ID = 14A DC choppers Motor Controls Switch-mode and resonant-mode Uninterruptable power supplies (UPS) • • Space savings High power density Easy to mount with 1 screw (isolated mounting screw hole) Pulse test, t ≤ 300 µs, duty cycle d ≤ 2% This data reflects the objective technical specification and characterization data from engineering lots. IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 95509A (4/95) 1-2 IRFP 360 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 14 A, pulse test Ciss C oss C rss VGS = 0 V, VDS = 25 V, f = 1 MHz t d(on) VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 tr td(off) RG = 4.3 Ω (External) tf Q g(on) Q gs 14 TO-247 AD Outline S 4500 pF 1100 490 pF pF 24 ns 33 100 ns ns 30 ns 1 2 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 Q gd 210 30 nC nC 110 nC 0.45 R thJC 0.25 R thCK Source-Drain Diode K/W K/W Ratings and Characteristics (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS= 0 23 A ISM Repetitive; pulse width limited by TJM 92 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.8 V t rr IF = IS, -di/dt = 100 A/µs 420 630 ns 5.6 8.4 µC Q rr © 2000 IXYS All rights reserved Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2