VDSS Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated -500V -7 A 1.5 Ω -500V -8 A 1.2 Ω IXTH 7P50 IXTH 8P50 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 7P50 8P50 -7 -8 A A IDM TC = 25°C, pulse width limited by TJ 7P50 8P50 -28 -32 A A IAR TC = 25°C 7P50 8P50 -7 -8 A A EAR TC = 25°C 30 mJ PD TC = 25°C 180 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. 6 g TJ TL Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight ID25 RDS(on) TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features • International standard package JEDEC TO-247 AD • Low R HDMOS process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) TM DS (on) rated • Low package inductance (<5 nH) - easy to drive and to protect Symbol Test Conditions VDSS V GS = 0 V, ID = -250 µA BVDSS Temperature Coefficient -500 V DS = VGS, ID = -250 µA VGS(th) Temperature Coefficient -3.0 VGS(th) IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = 0.8 VDSS V GS = 0 V RDS(on) V GS = -10 V, ID = 0.5 ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 0.054 -5.0 V %/K ±100 nA -200 -1 µA mA -0.122 TJ = 25°C TJ = 125°C 7P50 8P50 RDS(on) Temperature Coefficient © 2001 IXYS All rights reserved V %/K 1.5 Ω 1.2 Ω 0.6 %/K Applications • High side switching • Push-pull amplifiers • DC choppers • Automatic test equipment Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density 94534E (6/01) IXTH 7P50 IXTH 8P50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = -10 V; ID = ID25, pulse test 4 Ciss Coss 5 S 3400 pF 450 pF 175 pF V GS = 0 V, VDS = -25 V, f = 1 MHz Crss 33 ns tr V GS = -10 V, VDS = 0.5 VDSS ID = 0.5 ID25 27 ns td(off) RG = 4.7 Ω (External) 35 ns 35 ns 130 nC 32 nC 64 nC td(on) tf Qg(on) Qgs V GS = -10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd 0.7 RthJC K/W 0.25 RthCS Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS V GS = 0 7P50 8P50 -7 -8 A A ISM Repetitive; pulse width limited by TJM 7P50 8P50 -28 -32 A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % -3 V t rr IF = IS, di/dt = 100 A/µs 400 TO-247 AD Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC ns IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025