MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE CM400DY-34A ¡IC ................................................................... 400A ¡VCES ......................................................... 1700V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 10 130 110±0.2 10 4 4-φ6.5 36 10 4-M4 NUTS 13.8 11.5 43.8 130 26 110±0.2 20 28.5 9 14.5 20.5 10 16.5 13.5 （26） 9 （26） G1 （26） E1 20 E2 C1 C2 E1 24 LABEL 20 E2 9 14.5 3-M8 NUTS 28.5 9 G2 16.5 10 (MOUNTING HOLES) L A B 16.5 E2 G2 M （15） 16.5 C E2 C1 +1 G1 E1 24.5 –0.5 C2E1 9.1 M 7 7 3.5 +1 L 16 19 10 35 –0.5 A B C CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — — (Tj = 25°C, unless otherwise specified) Parameter Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Conditions Collector-emitter voltage Gate-emitter voltage G-E Short C-E Short DC, TC = 107°C*1 Pulse Operation Pulse TC = 25°C*1 Unit V V A A W °C °C Vrms N•m g (Tj = 25°C, unless otherwise specified) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance (Note 2) (Note 2) (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw G(E) terminal M4 screw Typical value VCE = VCES, VGE = 0V Min. — Limits Typ. — Max. 1 IC = 40mA, VCE = 10V 5.5 7.0 8.5 V — — — — — — — — — — — — — — — — — 1.2 — 2.2 2.45 — — — 2670 — — — — — 40 — — — 0.019 — 2.0 2.8 — 98.8 11.2 2.12 — 950 300 1000 350 450 — 3.0 0.033 0.055 — 12 µA Test conditions Parameter Thermal resistance Ratings 1700 ±20 400 800 400 800 3780 –40 ~ +150 –40 ~ +125 3500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C IC = 400A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 400A, VGE = 15V VCC = 1000V, IC = 400A VGE = ±15V RG = 1.2Ω, Inductive load IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound applied (1/2 module)*1,*2 Unit mA V nF nC ns µC V K/W Ω *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 2 MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 800 800 600 VCE = 10V 13 500 11 400 300 10 200 100 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 20V COLLECTOR CURRENT IC (A) 700 12 15 8 0 4 2 6 9 8 600 500 400 300 200 100 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE = 15V 4 3 2 1 Tj = 25°C Tj = 125°C 0 0 200 400 600 800 Tj = 25°C 8 6 IC = 800A IC = 400A 4 2 IC = 160A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 103 7 5 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C Tj = 125°C 3 2 103 7 5 3 2 102 7 5 3 2 101 0.5 10 COLLECTOR CURRENT IC (A) 104 EMITTER CURRENT IE (A) 700 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) Tj = 25°C 1 1.5 2 2.5 3 3.5 4 7 5 3 2 102 7 5 3 2 Cies 101 7 5 3 2 100 7 5 3 2 Coes Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM400DY-34A td(off) td(on) tf 103 7 5 3 2 102 2 3 5 7 102 2 3 5 7 103 td(on) td(off) 103 7 5 3 2 tr tf Conditions: VCC = 1000V VGE = ±15V IC = 400A Tj = 125°C Inductive load 102 7 5 3 2 101 0 10 2 3 5 7 101 2 3 5 7 102 SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) Err 7 102 7 5 5 3 3 Eon 2 Eoff 102 2 101 7 7 Conditions: VCC = 1000V VGE = ±15V RG = 1.2Ω Tj = 125°C Inductive load 5 3 2 2 3 5 7 102 2 3 5 3 2 100 SWITCHING LOSS Eon, Eoff (mJ/pulse) GATE RESISTANCE RG (Ω) 103 101 1 10 7 5 3 2 COLLECTOR CURRENT IC (A) SWITCHING LOSS Err (mJ/pulse) 101 1 10 Conditions: VCC = 1000V VGE = ±15V RG = 1.2Ω Tj = 125°C Inductive load tr 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. GATE RESISTANCE (TYPICAL) 104 5 7 103 103 102 Err 7 5 7 5 Eon 3 3 2 2 Eoff 102 101 7 Conditions: VCC = 1000V VGE = ±15V IC = 400A Tj = 125°C Inductive load 5 3 2 101 0 10 2 3 5 7 101 2 3 GATE RESISTANCE RG (Ω) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 5 3 2 trr Irr 102 7 Conditions: VCC = 1000V VGE = ±15V RG = 1.2Ω Tj = 25°C Inductive load 5 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 5 3 2 100 5 7 102 COLLECTOR CURRENT IC (A) 7 7 SWITCHING LOSS Err (mJ/pulse) 7 5 3 2 SWITCHING TIME td(on), tr, td(off), tf (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. COLLECTOR CURRENT (TYPICAL) 104 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) SWITCHING LOSS Eon, Eoff (mJ/pulse) SWITCHING TIME td(on), tr, td(off), tf (ns) HIGH POWER SWITCHING USE 100 7 5 3 2 10–1 7 5 3 2 Single Pulse Tc= 25°C Tc measured point is just under the chips 10–2 7 5 IGBT part: 3 Per unit base = Rth(j–c) = 0.033K/W 2 FWDi part: Per unit base = Rth(j–c) = 0.055K/ W 10–3 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 TIME (s) EMITTER CURRENT IC (A) Feb. 2009 4 MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 400A VCC = 800V 16 VCC = 1000V 12 8 4 0 0 1000 2000 3000 4000 GATE CHARGE QG (nC) Feb. 2009 5