NJD2873T4G Plastic Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. http://onsemi.com Features • High DC Current Gain − • • • • • SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS hFE = 120 (Min) @ IC = 500 mA = 40 (Min) @ IC = 2 A Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A High Current−Gain − Bandwidth Product − fT = 65 MHz (Min) @ IC = 100 mA Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V These are Pb−Free Packages MARKING DIAGRAM 4 MAXIMUM RATINGS Rating 1 2 DPAK CASE 369C STYLE 1 AYWW J 2873G Symbol Value Unit VCB 50 Vdc VCEO 50 Vdc VEB 5 Vdc IC 2 3 Adc A Y WW G Base Current IB 0.4 Adc ORDERING INFORMATION Total Device Dissipation @ TC = 25°C Derate above 25°C PD 15 0.1 W W/°C Total Device Dissipation @ TA = 25°C* Derate above 25°C PD 1.68 0.011 W W/°C TJ, Tstg −65 to +175 °C Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Continuous Peak Operating and Storage Junction Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3 = Assembly Location = Year = Work Week = Pb−Free Device Device Package Shipping† NJD2873T4G DPAK (Pb−Free) 2500 Units / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction−to−Case Junction−to−Ambient* RqJC RqJA 10 89.3 °C/W *These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 11 1 Publication Order Number: NJD2873T4/D NJD2873T4G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 50 − Vdc − 100 − 100 120 40 80 360 − 360 − 0.3 − 1.2 − − 1.2 0.95 fT 65 − MHz Cob − 80 pF OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO nAdc nAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 0.5 A, VCE = 2 V) (IC = 2 Adc, VCE = 2 Vdc) (IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C) hFE Collector−Emitter Saturation Voltage (Note 1) (IC = 1 A, IB = 0.05 A) VCE(sat) Base−Emitter Saturation Voltage (Note 1) (IC = 1 A, IB = 0.05 Adc) VBE(sat) Base−Emitter On Voltage (Note 1) (IC = 1 Adc, VCE = 2 Vdc) (IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C) VBE(on) − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 2. fT = ⎪hfe⎪• ftest. http://onsemi.com 2 NJD2873T4G TYPICAL CHARACTERISTICS PD , POWER DISSIPATION (WATTS) 25 20 15 10 5 0 25 0 50 75 100 125 150 175 200 T, TEMPERATURE (°C) Figure 1. Power Derating 0.4 100°C 100 10 0.01 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE = 2.0 V 25°C −40°C 0.6 0.5 0.4 0.3 100°C 150°C Ic/Ib = 20 175°C 0.2 0.01 0.2 0.1 Ic/Ib = 20 Figure 3. Collector−Emitter Saturation Voltage 0.9 25°C 25°C −40°C Figure 2. DC Current Gain 1.0 0.7 100°C 0 0.01 10 1.1 −40°C 150°C 0.3 IC, COLLECTOR CURRENT (AMPS) 1 1.2 0.8 175°C 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0.1 VBE(on), BASE−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 175°C 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1000 0.1 1 10 1.2 1.1 10 VCE = 2.0 V −40°C 1.0 25°C 0.9 100°C 150°C 175°C 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 4. Base−Emitter Saturation Voltage Figure 5. Base−Emitter Voltage http://onsemi.com 3 10 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) NJD2873T4G 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.02 RqJC(t) = r(t) qJC RqJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0 (SINGLE PULSE) 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 Figure 6. Thermal Response http://onsemi.com 4 10 20 50 100 200 NJD2873T4G PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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