ONSEMI TIP33C

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SEMICONDUCTOR TECHNICAL DATA
" ! . . . for general–purpose power amplifier and switching applications.
•
•
•
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10 A Collector Current
Low Leakage Current — ICEO = 0.7 mA @ 60 V
Excellent dc Gain — hFE = 40 Typ @ 3.0 A
High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5 A, f = 1.0 MHz
*Motorola Preferred Device
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10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
100 VOLTS
80 WATTS
MAXIMUM RATINGS
Symbol
TIP33B
TIP34B
TIP33C
TIP34C
Unit
VCEO
80 V
100 V
Vdc
Collector–Base Voltage
VCB
80 V
100 V
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak (1)
IC
10
15
Adc
Base Current — Continuous
IB
3.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
80
0.64
Watts
W/_C
– 65 to + 150
_C
Rating
Collector–Emitter Voltage
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 340D–02
TO–218AC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.56
_C/W
Junction–To–Free–Air Thermal Resistance
RθJA
35.7
_C/W
(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle
10%.
500
VCE = 4.0 V
TJ = 25°C
hFE , DC CURRENT GAIN
200
100
50
20
NPN
PNP
10
5.0
0.1
1.0
IC, COLLECTOR CURRENT (A)
10
Figure 1. DC Current Gain
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
 Motorola, Inc. 1996
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
80
100
—
—
ICEO
—
0.7
mA
Collector–Emitter Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES
—
0.4
mA
Emitter–Base Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
—
1.0
mA
40
20
—
100
—
—
1.0
4.0
—
—
1.6
3.0
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mA, IB = 0)
VCEO(sus)
TIP33B, TIP34B
TIP33C, TIP34C
Collector–Emitter Cutoff Current
(VCE = 60 V, IB = 0)
Vdc
TIP33B, TIP33C, TIP34B, TIP34C
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 1.0 A, VCE = 4.0 V)
(IC = 3.0 A, VCE = 4.0 V)
hFE
Collector–Emitter Saturation Voltage
(IC = 3.0 A, IB = 0.3 A)
(IC = 10 A, IB = 2.5 A)
VCE(sat)
Base–Emitter On Voltage
(IC = 3.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)
VBE(on)
—
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
(IC = 0.5 A, VCE = 10 V, f = 1.0 kHz)
hfe
20
—
—
Current–Gain — Bandwidth Product
(IC = 0.5 A, VCE = 10 V, f = 1.0 MHz)
fT
3.0
—
MHz
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2.0%.
15
10
1.0 ms
5.0
3.0
2.0
1.0
0.5
0.2
0.1
1.0
10 ms
dc
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT
TC = 25°C
300 µs
TIP33B
TIP34B
TIP33C
TIP34C
20 30
50
2.0 3.0
5.0 7.0 10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
20
L = 200 µH
IC/IB ≥ 5.0
VBE(off) = 0 to 5.0 V
TC = 100°C
15
10
TIP33C
TIP34C
5.0
TIP33B
TIP34B
0
70 100
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
0
60
80
20
40
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
Figure 3. Maximum Rated Forward Bias
Safe Operating Area
FORWARD BIAS
REVERSE BIAS
The Forward Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during forward bias. The data is based on TC = 25_C; T J(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10%, and must be derated thermally for TC > 25_C.
The Reverse Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during reverse biased turn–off. This rating is verified under
clamped conditions so the device is never subjected to an
avalanche mode.
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
C
Q
B
U
S
E
4
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
A
L
1
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
3
D
J
H
MILLIMETERS
MIN
MAX
–––
20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
–––
16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
INCHES
MIN
MAX
–––
0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
–––
0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
V
G
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 340D–02
ISSUE B
Motorola Bipolar Power Transistor Device Data
3
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4
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*TIP33B/D*
Motorola Bipolar Power Transistor Device Data
TIP33B/D