ONSEMI BD242C

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by BD241C/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for use in general purpose amplifier and switching applications.
• Collector–Emitter Saturation Voltage —
VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min.) BD242B
VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C
• High Current Gain — Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
• Compact TO–220 AB Package
*Motorola Preferred Device
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80, 100 VOLTS
40 WATTS
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MAXIMUM RATINGS
Symbol
BD242B
BD241C
BD242C
Unit
Collector–Emitter Voltage
VCEO
80
100
Vdc
Collector–Emitter Voltage
VCES
90
115
Vdc
Rating
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
3.0
5.0
Adc
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
40
0.32
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
Operating and Storage Junction
Temperature Range
CASE 221A–09
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RθJA
62.5
_C/W
Thermal Resistance, Junction to Case
RθJC
3.125
_C/W
PD, POWER DISSIPATION (WATTS)
40
30
20
10
0
0
20
40
60
80
100
120
140
160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1998
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage1
(IC = 30 mAdc, IB = 0)
VCEO
BD242B
BD241C, BD242C
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Vdc
80
100
ICEO
0.3
mAdc
BD241C, BD242B, BD242C
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
µAdc
ICES
BD242B
BD241C, BD242C
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
200
200
IEBO
mAdc
1.0
ON CHARACTERISTICS1
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
25
10
Collector–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 600 Adc)
VCE(sat)
Base–Emitter On Voltage
(IC = 3.0 Adc, VCE = 4.0 Vdc)
VBE(on)
Vdc
1.2
Vdc
1.8
DYNAMIC CHARACTERISTICS
Current Gain – Bandwidth Product2
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
fT
Small–Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
1 Pulse Test: Pulse Width
2 fT = |hfe| • ftest.
MHz
3.0
20
300 µs, Duty Cycle
2.0%.
2.0
APPROX
+ 11 V
VCC
Vin
Cjd
Vin 0
VEB(off)
RL
t1
APPROX
+ 11 V
t3
RK
% Ceb
v
t t
t
– 4.0 V
t1 7.0 ns
100 t2 500 µs
t3 15 ns
Vin
t2
TURN-OFF PULSE
[
DUTY CYCLE 2.0%
APPROX – 9.0 V
Figure 2. Switching Time Equivalent Circuit
2
IC/IB = 10
TJ = 25°C
1.0
0.7
0.5
SCOPE
t, TIME ( µs)
TURN-ON PULSE
0.3
tr @ VCC = 30 V
tr @ VCC = 10 V
0.1
0.07
0.05
0.03
0.02
0.03
td @ VBE(off) = 2.0 V
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn–On Time
Motorola Bipolar Power Transistor Device Data
3.0
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
D = 0.5
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
ZθJC (t) = r(t) RθJC
RθJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) – TC = P(pk) ZθJC(t)
DUTY CYCLE, D = t1/t2
0.05
0.02
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
50
100
200
500 1.0 k
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. Thermal Response
10
5.0
1.0 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150_C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100 µs
5.0 ms
2.0
1.0
SECOND BREAKDOWN
LIMITED @ TJ 150°C
THERMAL LIMITATION @ TC = 25°C
BONDING WIRE LIMITED
v
0.5
0.2
CURVES APPLY BELOW
RATED VCEO
0.1
5.0
v
BD242B
BD241C, BD242C
10
20
50
IC, COLLECTOR CURRENT (AMP)
100
Figure 5. Active Region Safe Operating Area
1.0
0.7
0.5
0.3
0.2
ts′
tf @ VCC = 30 V
tf @ VCC = 10 V
0.1
TJ = + 25°C
200
100
Ceb
70
50
0.07
0.05
0.03
0.03
300
IB1 = IB2
IC/IB = 10
ts′ = ts – 1/8 tf
TJ = 25°C
CAPACITANCE (pF)
t, TIME ( µs)
3.0
2.0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
Motorola Bipolar Power Transistor Device Data
2.0 3.0
30
0.1
Ccb
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
VR, REVERSE VOLTAGE (VOLTS)
20 30 40
Figure 7. Capacitance
3
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
500
hFE, DC CURRENT GAIN
300
100
70
VCE = 2.0 V
TJ = 150°C
25°C
– 55°C
50
30
10
7.0
5.0
0.03
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
TJ = 25°C
1.6
1.2
IC = 0.3 A
0.4
0
3.0
1.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0.1
0.2 0.3 0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT ( µA)
500
+ 1.5
+ 1.0
*θVC FOR VCE(sat)
+ 0.5
0
– 0.5
– 1.0
– 1.5
θVB FOR VBE
– 2.0
– 2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3
0.5
1.0
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
102
VCE = 30 V
101
TJ = 150°C
100
100°C
REVERSE
FORWARD
25°C
10– 3
– 0.4 – 0.3 – 0.2 – 0.1
ICES
0
+ 0.1 + 0.2 + 0.3
1000
*APPLIES FOR IC/IB ≤ 5.0
TJ = – 65°C TO + 150°C
+ 2.0
IC, COLLECTOR CURRENT (AMP)
10–1
4
10
20
50
100 200
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMPS)
103
10– 2
5.0
+ 2.5
+ 0.4 + 0.5
+ 0.6
RBE , EXTERNAL BASE–EMITTER RESISTANCE (OHMS)
V, VOLTAGE (VOLTS)
TJ = 25°C
0
0.003 0.005 0.01 0.020.03 0.05
2.0
Figure 9. Collector Saturation Region
1.4
0.2
3.0 A
0.8
Figure 8. DC Current Gain
1.2
1.0 A
2.0 3.0
107
VCE = 30 V
IC = 10 x ICES
106
105
IC ≈ ICES
IC = 2 x ICES
104
103
102
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
20
40
60
80
100
120
140
160
VBE, BASE–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut–Off Region
Figure 13. Effects of Base–Emitter Resistance
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
–T–
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
STYLE 1:
PIN 1.
2.
3.
4.
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–09
TO–220AB
ISSUE Z
Motorola Bipolar Power Transistor Device Data
5
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6
◊
Motorola Bipolar Power Transistor Device BD241C/D
Data