STV9378F VERTICAL DEFLECTION BOOSTER .. .. .. ADVANCE DATA POWER AMPLIFIER THERMAL PROTECTION OUTPUT CURRENT UP TO 2.0APP FLYBACK VOLTAGE UP TO 90V (on Pin 5) INTERNAL REFERENCE VOLTAGE EXTERNAL FLYBACK SUPPLY DESCRIPTION Designed for monitors and high performance TVs, the STV9378F vertical deflection booster can handle flyback voltage up to 90V. More than this it is possible to have a flyback voltage which is more than the double of the supply (Pin 2). This allows to decrease the power consumption or to decrease the flyback time for a given supply voltage. The STV9378F operates with supplies up to 42V and provides up to 2App output current to drive the yoke. The STV9378Fis offered in HEPTAWATT package. HEPTAWATT (Plastic Package) ORDER CODE : STV9378F PIN CONNECTIONS 7 6 5 4 3 2 1 Non-inverting Input and Reference Voltage Output Stage Supply Output GND Flyback Supply Supply Voltage Inverting Input 9378F-01.EPS Tab connected to pin 4 July 1994 This is advance information on a new product now in development or undergoing evaluation. Details are subject to change without no tice. 1/5 STV9378F BLOCK DIAGRAM OUTPUT SUPPLY STAGE VOLTAGE SUPPLY 2 6 FLYBACK SUPPLY 3 10kΩ REFERENCE VOLTAGE 1 POW ER AMPLIFIER NON-INVERTING INPUT 5 OUTPUT 7 THERMAL PROTECTION STV9378F 9378F-02.EPS INVERTING INPUT 4 GROUND ABSOLUTE MAXIMUM RATINGS Parameter VS Supply Voltage (Pin 2) (see note 1) V6 Flyback Peak Voltage (Pin 6) (see note 1) V1 , V7 Amplifier Input Voltage (Pins 1-7) (see note 1) Value Unit 50 V 100 V - 0.3, + VS V IO Maximum Output Peak Current (see notes 2 and 3) 1.5 A I3 Maximum Sink Current (t < 1ms) 1.5 A I3 Maximum Source Current (t < 1ms) (in the diode, see Block Diagram) 1.5 A V3 - V2 Voltage Difference between Flyback Supply and Supply Voltage 70 V Toper Operating Ambient Temperature - 20, + 75 o C Tstg Storage Temperature - 40, + 150 o C +150 o C Junction Temperature Tj Notes : 1. 2. 3. 9378F-01.TBL Symbol Versus GND. The output current can reach 4A peak for t ≤ 10µs (up to 120Hz). Provided SOAR is respected (see Figures 1 and 2). THERMAL DATA Parameter Value 3 Unit Junction-case Thermal Resistance Tt Temperature for Thermal Shutdown 150 o C ∆Tt Hysteresis on Tt 10 o C Tjr Recommended Max. Junction Temperature 120 o C 2/5 Max. o Rth (j-c) C/W 9378F-02.TBL Symbol STV9378F ELECTRICAL CHARACTERISTICS (VS = 42V, TA = 25oC, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit VS Operating Supply Voltage Range 10 42 V V3M Operating Flyback Supply Voltage VS 90 V 10 20 mA 10 30 mA 1 A - 0.15 -1 µA 2.3 2.4 V 2 4 mV/V 100 150 ppm/ C Pin 2 Quiescent Current I3 = 0, I5 = 0 I3 = 0, I5 = 0 I6 Pin 6 Quiescent Current IO Max. Peak Output Current I1 Amplifier Bias Current V7 Internal Reference Voltage 5 V1 = 1V 2.2 ∆V7 ∆VS Reference Voltage Drift versus VS Kt Reference Voltage Drift versus Tj VS = 24 to 42V 80 o GV Voltage Gain V5L Output Saturation Voltage to GND (Pin 4) I5 = 1A 1 1.5 dB V V5H Output Saturation Voltage to Supply (Pin 6) I5 = - 1A 1.6 2.1 V VD5 - 6 Diode Forward Voltage between Pins 5-6 I5 = 1A 1.5 2 V VD3-6 Diode Forward Voltage between Pins 3-6 I3 = 1A 1.5 2 V V3-6 Voltage Drop between Pins 3-6 (2nd part of flyback) I3 = - 1A 2.1 2.9 V 9378F-03.TBL I2 APPLICATION CIRCUIT + VS Flyback Supply 2 6 3 10kΩ REFERENCE VOLTAGE POWER AMPLIFIER 5 0.22µF 1.5Ω 7 THERMAL PROTECTION STV9378F 4 R3 R4 CL R2 9378F-03.EPS 10µF YOKE 1 330Ω R5 R1 3/5 STV9378F Figure 1 : Output Transistors SOA (for secondary breakdown) 10 Figure 2 : Secondary Breakdown Temperature Derating Curve (ISB = secondary breakdown current) ISB (%) I C (A) 100 @ T case = 25°C 90 1 80 t = 1ms t = 10ms t = 100ms V CE (V) 10 -2 1 4/5 10 10 2 T case (°C) 60 25 50 75 100 125 9378F-05.EPS 70 9378F-04.EPS 10 -1 STV9378F PACKAGE MECHANICAL DATA : 7 PINS - PLASTIC HEPTAWAT E L D1 C D M A M1 L1 L2 G2 H3 G1 L3 G L5 F PM-HEPTV.EPS L7 H2 F1 Dia. L6 Min. A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia. Millimeters Typ. 2.4 1.2 0.35 0.6 2.41 4.91 7.49 2.54 5.08 7.62 10.05 Max. 4.8 1.37 2.8 1.35 0.55 08 0.9 2.67 5.21 7.8 10.4 10.4 Min. 0.094 0.047 0.014 0.024 0.095 0.193 0.295 Max. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409 0.668 0.587 0.848 0.891 3 15.8 6.6 0.102 0.594 0.236 2.8 5.08 3.65 0.100 0.200 0.300 0.396 16.97 14.92 21.54 22.62 2.6 15.1 6 Inches Typ. 0.118 0.622 0.260 0.110 0.200 3.85 0.144 HEPTV.TBL Dimensions 0.152 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved 2 Purchase of I C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5