UNISONIC TECHNOLOGIES CO., LTD UT4232 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UT4232 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and to be operated with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. FEATURES * VDS(V)=30V * ID=7A (VGS = 10V) * RDS(ON)<22mΩ@VGS=10V * RDS(ON)<32mΩ@VGS=4.5V * Halogen Free SYMBOL ORDERING INFORMATION Ordering Number UT4232G-S08-R Package SOP-8 www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Packing Tape Reel 1 of 4 QW-R502-337.a UT4232 Preliminary Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-337.a UT4232 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Ta=25°C)(Note 2) ID 7.8 A Pulsed Drain Current (Note 3) IDM 30 A Power Dissipation (Ta=25°C) 2 W PD Derate above Ta>25°C 0.016 W/°C Junction Temperature TJ +150 °C Junction and Storage Temperature Range TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface mounted on 1 in2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on min 3. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER SYMBOL MIN TYP MAX Junction to Ambient θJA 62.5 Note: Surface mounted on 1 in2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on min UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance SYMBOL BVDSS TEST CONDITIONS VGS=0 V, ID=250 µA IDSS IGSS VDS=30 V,VGS=0 V VGS=±20 V, VDS=0 V VGS(TH) VD S= VGS, ID=250 µA VGS=10 V, ID=7 A VGS=4.5 V, ID=5 A RDS(ON) UNISONIC TECHNOLOGIES CO., LTD TYP MAX UNIT 30 ΔBVDSS/ΔTJ Reference to 25°C,ID=1mA DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0 V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VGS=10V,VDS=15V, RD=15Ω, Turn-ON Rise Time tR RG=3.3Ω, ID=1 A Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VGS=4.5 V, VDS=24 V, ID=7 A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=1.7 A, VGS=0 V Reverse Recovery Time tRR IS=7 A, VGS=0 V, dI/dt=100A/μs Reverse Recovery Charge QRR www.unisonic.com.tw MIN V 0.02 1 720 230 200 10 7 22 8 13 3 9 V/°C 1 ±100 µA nA 3 22 32 V mΩ mΩ 1150 pF pF pF 21 1.2 16 8 ns ns ns ns nC nC nC V ns nC 3 of 4 QW-R502-337.a UT4232 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-337.a