UNISONIC TECHNOLOGIES CO., LTD UT3416 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3416 is advanced n-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS (ON), low gate charge and low gate voltages as low as 1.8V.When it is used as a load switch or in PWM application, the UTC UT3416 can be considered as an ideal. FEATURES * VDS =20 V * ID =6.5 A * RDS(ON)<22 mΩ @VGS = 4.5 V * RDS(ON) <26 mΩ @VGS = 2.5 V * RDS(ON) <34 mΩ @VGS = 1.8 V SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT3416L-AE3-R UT3416G-AE3-R Package SOT-23 1 S Pin Assignment 2 3 G D Packing Tape Reel MARKING 34S L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-325.c UT3416 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Ta=25°C) ID 6.5 A Pulsed Drain Current (Note 2) IDM 30 A Power Dissipation (Ta=25°C)(Note 3) PD 1.4 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. Surface mounted on 1in2 copper pad of FR4 board THERMAL DATA PARAMETER Junction to Ambient (Note) Note: Surface mounted on 1 in2 copper pad of FR4 board SYMBOL θJA MIN TYP 85 MAX 125 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS IGSS ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current VGS(TH) ID(ON) Static Drain-Source On-Resistance RDS(ON) TEST CONDITIONS VGS =0V, ID =250µA VGS =0V, VDS =16V VGS =±4.5V, VDS =0V VGS = ±8V, VDS =0V 20 VDS =VGS, ID =250µA VGS =4.5V, VDS =5V VGS=4.5V, ID =6.5A VGS =2.5V, ID =5.5A VGS =1.8V, ID =5A 0.4 30 DYNAMIC PARAMETERS Input Capacitance CISS VGS =0V, VDS =10V, f =1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG VGS =0V , VDS =0V, f =1MHz SWITCHING PARAMETERS Total Gate Charge QG VDS =10V,VGS =4.5V,ID =6.5A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VGS =5V, VDS =10V Turn-ON Rise Time tR RL =1.5Ω, RGEN =3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS =1A, VGS =0V Maximum Body-Diode Continuous IS Current Body Diode Reverse Recovery Time tRR IF =6.5A, dI/dt=100A/μs Body Diode Reverse Recovery Charge QRR Note: Surface mounted on 1 in2 copper pad of FR4 board UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 ±1 ±10 V µA µA µA 0.6 1 18 21 26 22 26 34 V A mΩ mΩ mΩ 1160 187 146 1.5 pF pF pF Ω 16 0.8 3.8 6.2 12.7 51.7 16 nC nC nC ns ns ns ns 0.76 17.7 6.7 1 V 2.5 A ns nC 2 of 3 QW-R502-325.c UT3416 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-325.c