UTC-IC UT8205A

UNISONIC TECHNOLOGIES CO., LTD
UT8205A
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
„
The UT8205A uses advanced technology to provide fast
switching, low on-resistance and cost-effectiveness. This device is
suitable for all commercial-industrial surface mount applications.
FEATURES
„
* RDS(ON) ≤28mΩ @VGS = 4.5 V
* Ultra low gate charge ( typical 23 nC )
* Low reverse transfer Capacitance ( CRSS = typical 150 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
„
D
G1
G2
S1
„
S2
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
UT8205AL-AG6-R UT8205AG-AG6-R
UT8205AL-S08-R
UT8205AG-S08-R
UT8205AL-P08-R
UT8205AG-P08-R
Package
SOT-26
SOP-8
TSSOP-8
UT8205AL-AG6-R
(1) Packing Type
„
Pin Assignment
1 2 3 4 5 6 7 8
S1 D S2 G2 D G1 D S1 S1 G1 G2 S2 S2 D2
D S1 S1 G1 G2 S2 S2 D2
Packing
Tape Reel
Tape Reel
Tape Reel
(1) R: Tape Reel
(2) Package Type
(2) AG6: SOT-26, P08:TSSOP-8 S08:SOP-8
(3) Lead Plating
(3) G: Halogen Free, L: Lead Free
MARKING FOR SOT-26
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Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R502-287.B
UT8205A
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
IDM
RATINGS
UNIT
20
V
±12
V
Continuous
6
A
Drain Current (Note 2)
20
A
Pulsed
SOT-26
1.14
W
Power Dissipation (Ta=25°C) (Note 3)
PD
SOP-8/TSSOP-8
1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
3. Pulse width limited by TJ(MAX)
Drain-Source Voltage
Gate-Source Voltage
„
THERMAL DATA
PARAMETER
SYMBOL
SOT-26
SOP-8
TSSOP-8
Note: Pulse Test : Pulse width≤300μs, Duty cycle≤2%
Junction to Ambient (Note)
„
MIN
TYP
θJA
MAX
110
78
125
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
SYMBOL
BVDSS
ΔBVDSS
ΔTJ
TEST CONDITIONS
VGS=0V, ID=250µA
MIN
IDSS
IGSS
VDS=20V, VGS=0V,
VGS=±8V
VGS(TH)
Drain-Source On-State Resistance (Note)
RDS(ON)
VDS=VGS, ID=250µA
VGS=4.5V, ID=6.0A
VGS=2.5V, ID=5.2A
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V
0.03
0.5
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=20V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time (Note)
tD(ON)
Turn-ON Rise Time
tR
VGS=5V, VDS=10V, RD=10Ω,
RG=6Ω, ID=1A
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge(Note)
QG
VDS =20V, VGS =5V, ID =6.0A
Gate Source Charge
QGS
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
VSD
IS=1.7A, VGS=0V
Diode Continuous Forward Current
IS
VD=VG, VS=1.3V
Note: Surface mounted on 1 in2 copper pad of FR4 board; 208°C/W when mounted on min.
UNISONIC TECHNOLOGIES CO., LTD
MAX UNIT
20
ID=1mA, Reference to 25°C
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
TYP
V/°C
1
±100
μA
nA
1.5
28
38
V
mΩ
mΩ
1035
320
150
pF
pF
pF
30
70
40
65
23
4.5
7
ns
ns
ns
ns
nC
nC
nC
1.2
1.54
V
A
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UT8205A
TYPICAL CHARACTERISTICS
Drain Current vs. Gate Threshold
Voltage
Drain Current vs. Drain-Source
Breakdown Voltage
300
300
250
Drain Current, ID (µA)
Drain Current, ID (µA)
250
200
150
100
200
150
100
50
50
0
0
0
5
10
15
20
25
30
Drain-Source Breakdown Voltage, BVDSS(V)
0.4
0.6
0.8
1.0
1.2
2.0
1.8
VGS=4.5V
ID=6A
VGS=2.5V
ID=5.2A
3
2
Drain Current, ID (A)
1.6
5
4
0.2
Drain Current vs. Source to Drain
Voltage
7
6
0
Gate Threshold Voltage, VTH (V)
Drain-Source On-State Resistance
Characteristics
Drain Current, ID (A)
„
Power MOSFET
1.4
1.2
1.0
0.8
0.6
0.4
1
0.2
0
0
0
50 100 150 200 250 300
Drain to Source Voltage, VDS (mV)
UNISONIC TECHNOLOGIES CO., LTD
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0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
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QW-R502-287.B