Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier MMG3010NT1 The MMG3010NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, P C S , B W A , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l small - signal RF. 0 - 6000 MHz, 15 dB 17 dBm InGaP HBT LIFETIME BUY Features • Frequency: 0 to 6000 MHz • P1dB: 17 dBm @ 900 MHz • Small - Signal Gain: 15 dB @ 900 MHz • Third Order Output Intercept Point: 31 dBm @ 900 MHz • Single 5 Volt Supply • Internally Matched to 50 Ohms • Low Cost SOT - 89 Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. Table 1. Typical Performance (1) 3 CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC Table 2. Maximum Ratings Characteristic Symbol 900 MHz 2140 MHz 3500 MHz Unit Small - Signal Gain (S21) Gp 15 14 12 dB Input Return Loss (S11) IRL - 15 - 17 - 22 dB Output Return Loss (S22) ORL - 25 - 25 - 15 dB Power Output @1dB Compression P1db 17 16.5 15.5 dBm IP3 31 30 28 dBm Third Order Output Intercept Point 12 Rating Symbol Value Unit Supply Voltage VCC 7 V Supply Current ICC 300 mA RF Input Power Pin 10 dBm Storage Temperature Range Tstg - 65 to +150 °C Junction Temperature (2) TJ 150 °C 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VCC = 5 Vdc, TC = 25°C, 50 ohm system Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 54 mA, TC = 25°C) Characteristic Thermal Resistance, Junction to Case Symbol Value (3) Unit RθJC 83 °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2008. All rights reserved. RF Device Data Freescale Semiconductor LAST ORDER 27 DEC 08 LAST SHIP 27 JUN 09 Document Number: MMG3010NT1 Rev. 5, 3/2008 MMG3010NT1 1 Symbol Min Typ Max Unit Small - Signal Gain (S21) Characteristic Gp 14 15 — dB Input Return Loss (S11) IRL — - 15 — dB Output Return Loss (S22) ORL — - 25 — dB Power Output @ 1dB Compression P1dB — 17 — dBm Third Order Output Intercept Point IP3 — 31 — dBm Noise Figure NF — 4.5 — dB Supply Current (1) ICC 46 54 63 mA Supply Voltage (1) VCC — 5 — V LIFETIME BUY 1. For reliable operation, the junction temperature should not exceed 150°C. LAST ORDER 27 DEC 08 LAST SHIP 27 JUN 09 Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit) MMG3010NT1 2 RF Device Data Freescale Semiconductor Pin Number 2 Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 1 2 3 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Methodology Class 1A (Minimum) Machine Model (per EIA/JESD 22 - A115) A (Minimum) LIFETIME BUY Human Body Model (per JESD 22 - A114) Charge Device Model (per JESD 22 - C101) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C LAST ORDER 27 DEC 08 LAST SHIP 27 JUN 09 Table 5. Functional Pin Description MMG3010NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS 25°C −10 S11 15 S11, S22 (dB) Gp, SMALL−SIGNAL GAIN (dB) TC = 85°C - 40°C 10 −20 S22 −30 VCC = 5 Vdc ICC = 54 mA VCC = 5 Vdc 5 −40 1 2 3 0 4 2 3 4 f, FREQUENCY (GHz) Figure 2. Small - Signal Gain (S21) versus Frequency Figure 3. Input/Output Return Loss versus Frequency 17 P1dB, 1 dB COMPRESSION POINT (dBm) 19 16 900 MHz 15 2140 MHz 1960 MHz 14 13 2600 MHz 12 3500 MHz 11 VCC = 5 Vdc ICC = 54 mA 10 8 10 9 12 11 13 14 17 16 15 14 VCC = 5 Vdc ICC = 54 mA 13 0.5 16 1 1.5 2 2.5 3 Pout, OUTPUT POWER (dBm) f, FREQUENCY (GHz) Figure 4. Small - Signal Gain versus Output Power Figure 5. P1dB versus Frequency 90 80 70 60 50 40 30 20 10 0 4 18 12 15 100 ICC, COLLECTOR CURRENT (mA) 1 f, FREQUENCY (GHz) 4.2 4.4 4.6 4.8 5 5.2 5.4 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) Gp, SMALL−SIGNAL GAIN (dB) LIFETIME BUY 0 3.5 36 33 30 27 VCC = 5 Vdc ICC = 54 mA 1 MHz Tone Spacing 24 21 0 1 2 3 VCC, COLLECTOR VOLTAGE (V) f, FREQUENCY (GHz) Figure 6. Collector Current versus Collector Voltage Figure 7. Third Order Output Intercept Point versus Frequency LAST ORDER 27 DEC 08 LAST SHIP 27 JUN 09 0 20 4 MMG3010NT1 4 RF Device Data Freescale Semiconductor 36 33 30 27 24 f = 900 MHz 1 MHz Tone Spacing 21 4.95 4.9 5 5.05 5.1 LIFETIME BUY VCC, COLLECTOR VOLTAGE (V) 32 31 30 29 28 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing 27 26 −40 −20 20 40 60 80 100 T, TEMPERATURE (_C) 105 −30 −40 MTTF (YEARS) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 0 Figure 9. Third Order Output Intercept Point versus Case Temperature Figure 8. Third Order Output Intercept Point versus Collector Voltage −50 −60 −80 −3 104 VCC = 5 Vdc ICC = 54 mA f = 900 MHz 1 MHz Tone Spacing −70 103 0 6 3 9 12 120 15 125 Pout, OUTPUT POWER (dBm) Figure 10. Third Order Intermodulation versus Output Power 4 2 VCC = 5 Vdc ICC = 54 mA 0 1 2 3 135 140 145 150 NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 54 mA Figure 11. MTTF versus Junction Temperature ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 6 0 130 TJ, JUNCTION TEMPERATURE (°C) 8 NF, NOISE FIGURE (dB) 33 4 −20 VCC = 5 Vdc, ICC = 54 mA, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) −30 −40 −50 −60 −70 −3 0 3 6 9 12 f, FREQUENCY (GHz) Pout, OUTPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power 15 LAST ORDER 27 DEC 08 LAST SHIP 27 JUN 09 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 50 OHM TYPICAL CHARACTERISTICS MMG3010NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 40- 300 MHz R1 C3 C4 L1 RF INPUT Z1 DUT Z2 S21, S11, S22 (dB) LIFETIME BUY C1 Z1, Z5 Z2 Z3 Z3 Z4 Z5 VCC 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip RF OUTPUT C2 Z4 PCB 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 20 S21 10 R1 0 C4 C3 L1 −10 S11 C2 C1 −20 −30 S22 VCC = 5 Vdc ICC = 54 mA MMG30XX Rev 2 −40 100 0 200 300 400 500 f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3 0.01 μF Chip Capacitors C0603C103J5RAC Kemet C4 1000 pF Chip Capacitor C0603C102J5RAC Kemet L1 470 nH Chip Inductor BK2125HM471 - T Taiyo Yuden R1 0 W Chip Resistor ERJ3GEY0R00V Panasonic LAST ORDER 27 DEC 08 LAST SHIP 27 JUN 09 VSUPPLY MMG3010NT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 300 - 3600 MHz R1 C3 C4 L1 RF INPUT Z1 DUT Z2 S21, S11, S22 (dB) LIFETIME BUY C1 Z1, Z5 Z2 Z3 Z3 Z4 Z5 VCC 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip RF OUTPUT C2 Z4 PCB 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 17. 50 Ohm Test Circuit Schematic 20 10 S21 R1 0 C4 C3 L1 −10 S11 C2 C1 −20 −30 VCC = 5 Vdc ICC = 54 mA S22 −40 300 800 1300 1800 2300 2800 3300 MMG30XX Rev 2 3800 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 9. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 150 pF Chip Capacitors C0603C151J5RAC Kemet C3 0.01 μF Chip Capacitor C0603C103J5RAC Kemet C4 1000 pF Chip Capacitor C0603C102J5RAC Kemet L1 56 nH Chip Inductor HK160856NJ - T Taiyo Yuden R1 0 W Chip Resistor ERJ3GEY0R00V Panasonic LAST ORDER 27 DEC 08 LAST SHIP 27 JUN 09 VSUPPLY MMG3010NT1 RF Device Data Freescale Semiconductor 7 50 OHM TYPICAL CHARACTERISTICS S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 100 0.18961 174.356 6.08599 176.121 0.10045 - 1.147 0.01890 - 117.716 150 0.18946 172.591 6.06991 173.709 0.10051 - 1.684 0.01961 - 119.073 200 0.18931 170.087 6.05558 171.476 0.10055 - 2.764 0.02022 - 121.834 250 0.18916 168.286 6.04027 169.492 0.10060 - 3.23 0.02108 - 123.647 300 0.18900 166.103 6.03125 167.447 0.10065 - 3.883 0.02178 - 125.155 350 0.18887 163.926 6.01832 165.299 0.10069 - 4.61 0.02240 - 127.572 400 0.18873 161.691 6.00664 163.288 0.10073 - 5.218 0.02324 - 129.668 450 0.18856 159.363 5.99750 161.184 0.10078 - 5.914 0.02417 - 131.224 500 0.18844 157.207 5.98612 159.055 0.10085 - 6.577 0.02490 - 133.739 550 0.18829 154.948 5.97231 157.036 0.10090 - 7.176 0.02589 - 135.854 600 0.18813 152.775 5.95537 154.979 0.10098 - 7.816 0.02683 - 137.345 650 0.18799 150.556 5.94078 152.921 0.10111 - 8.444 0.02784 - 139.784 700 0.18783 148.43 5.92660 150.895 0.10103 - 9.124 0.02895 - 141.384 750 0.18769 146.278 5.90891 148.835 0.10115 - 9.76 0.03030 - 143.84 800 0.18753 144.103 5.88998 146.803 0.10113 - 10.388 0.03176 - 145.852 850 0.18738 142.071 5.86905 144.751 0.10130 - 11.106 0.03328 - 147.52 900 0.18723 140.126 5.84578 142.751 0.10126 - 11.715 0.03472 - 148.773 950 0.18703 138.174 5.82588 140.772 0.10142 - 12.347 0.03683 - 150.721 1000 0.18689 136.334 5.80670 138.776 0.10134 - 13.049 0.03847 - 153.215 1050 0.18674 134.574 5.77963 136.782 0.10156 - 13.635 0.04077 - 155.358 1100 0.18657 132.862 5.75495 134.777 0.10146 - 14.317 0.04304 - 159.06 1150 0.18643 131.57 5.72982 132.79 0.10159 - 14.945 0.04551 - 162.691 1200 0.18629 130.147 5.70191 130.817 0.10169 - 15.594 0.04827 - 166.671 1250 0.18613 128.841 5.67762 128.866 0.10184 - 16.271 0.05112 - 170.497 1300 0.18599 127.621 5.65132 126.933 0.10183 - 16.958 0.05460 - 174.453 1350 0.18582 126.515 5.62394 124.986 0.10196 - 17.615 0.05759 - 178.275 1400 0.18568 125.418 5.59479 123.074 0.10201 - 18.236 0.06146 178.051 1450 0.18567 124.471 5.56625 121.175 0.10211 - 18.888 0.06306 174.258 1500 0.18569 123.602 5.54822 119.257 0.10220 - 19.552 0.06362 170.85 1550 0.18591 122.392 5.52432 117.274 0.10258 - 20.344 0.06362 163.521 1600 0.18645 120.668 5.49674 115.354 0.10272 - 20.962 0.06377 160.673 1650 0.18767 119.047 5.46526 113.429 0.10283 - 21.702 0.06570 158.125 1700 0.18855 117.338 5.43646 111.53 0.10301 - 22.327 0.06858 155.716 1750 0.19030 115.719 5.40925 109.673 0.10315 - 23.09 0.07094 153.133 1800 0.19186 114.043 5.38177 107.795 0.10333 - 23.804 0.07392 151.055 1850 0.19364 112.379 5.35341 105.878 0.10340 - 24.547 0.07711 148.881 1900 0.19581 110.938 5.32341 104.011 0.10356 - 25.192 0.08039 147.016 1950 0.19775 109.449 5.29221 102.117 0.10384 - 25.884 0.08395 145.259 2000 0.20022 108.079 5.25998 100.28 0.10401 - 26.62 0.08764 143.574 2050 0.20274 106.526 5.22900 98.422 0.10405 - 27.296 0.09155 141.882 2100 0.20483 105.054 5.20224 96.556 0.10413 - 28.065 0.09523 140.434 2150 0.20673 103.673 5.16895 94.728 0.10441 - 28.819 0.09969 138.992 2200 0.21006 102.263 5.13639 92.885 0.10441 - 29.517 0.10388 137.594 2250 0.21183 100.83 5.10466 91.074 0.10468 - 30.238 0.10812 136.199 LAST ORDER 27 DEC 08 LAST SHIP 27 JUN 09 LIFETIME BUY Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 54 mA, TC = 25°C, 50 Ohm System) (continued) MMG3010NT1 8 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2300 0.21443 99.385 5.07001 89.25 0.10472 - 30.97 0.11217 134.891 2350 0.21661 98.005 5.03818 87.453 0.10489 - 31.768 0.11632 133.499 2400 0.21882 96.635 5.00516 85.611 0.10502 - 32.469 0.12050 132.176 2450 0.22193 95.395 4.97224 83.821 0.10521 - 33.265 0.12557 130.946 2500 0.22303 93.907 4.93831 82.052 0.10527 - 34.008 0.12957 129.503 2550 0.22524 92.5 4.90747 80.256 0.10541 - 34.706 0.13384 128.151 2600 0.22731 91.106 4.87540 78.504 0.10567 - 35.467 0.13842 126.605 2650 0.22921 89.599 4.84438 76.72 0.10587 - 36.255 0.14269 125.06 2700 0.23072 88.26 4.81170 74.931 0.10582 - 37.021 0.14690 123.585 2750 0.23259 86.873 4.77720 73.147 0.10600 - 37.804 0.15188 122.036 2800 0.23443 85.515 4.74514 71.382 0.10623 - 38.579 0.15645 120.364 2850 0.23625 84.122 4.71210 69.615 0.10637 - 39.349 0.16075 118.48 2900 0.23786 82.84 4.68334 67.904 0.10648 - 40.152 0.16529 116.779 2950 0.23979 81.448 4.64992 66.078 0.10664 - 41.004 0.16969 114.827 3000 0.24125 80.072 4.61988 64.334 0.10700 - 41.819 0.17439 112.861 3050 0.24422 78.711 4.58846 62.607 0.10702 - 42.586 0.17909 111.23 3100 0.24610 77.547 4.55812 60.863 0.10736 - 43.392 0.18404 109.114 3150 0.24792 76.337 4.52495 59.115 0.10733 - 44.248 0.18914 107.101 3200 0.25072 75.174 4.49699 57.356 0.10748 - 45.078 0.19427 105.076 3250 0.25383 73.947 4.46681 55.612 0.10765 - 45.892 0.19983 102.924 3300 0.25590 72.848 4.43561 53.877 0.10784 - 46.753 0.20478 100.877 3350 0.25874 71.738 4.40430 52.133 0.10813 - 47.687 0.21036 98.897 3400 0.26159 70.666 4.37458 50.384 0.10814 - 48.565 0.21586 96.818 3450 0.26531 69.68 4.34458 48.649 0.10821 - 49.382 0.22115 94.763 3500 0.26829 68.707 4.31385 46.916 0.10846 - 50.314 0.22678 92.769 3550 0.27180 67.687 4.28470 45.167 0.10856 - 51.229 0.23264 90.836 3600 0.27525 66.773 4.25389 43.44 0.10871 - 52.108 0.23850 88.858 LAST ORDER 27 DEC 08 LAST SHIP 27 JUN 09 LIFETIME BUY Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 54 mA, TC = 25°C, 50 Ohm System) (continued) MMG3010NT1 RF Device Data Freescale Semiconductor 9 7.62 0.305 diameter 2.49 3.48 5.33 2.54 1.27 1.27 0.58 0.86 0.64 3.86 LIFETIME BUY Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. Figure 20. Recommended Mounting Configuration LAST ORDER 27 DEC 08 LAST SHIP 27 JUN 09 1.7 MMG3010NT1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3010NT1 RF Device Data Freescale Semiconductor 11 MMG3010NT1 12 RF Device Data Freescale Semiconductor MMG3010NT1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier Biasing REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 3 Mar. 2007 • Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS compliant part numbers, p. 6, 7 4 July 2007 • Replaced Case Outline 1514 - 01 with 1514 - 02, Issue D, p. 1, 11 - 13. Case updated to add missing dimension for Pin 1 and Pin 3. 5 Mar. 2008 • Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 • Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 5 • Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz, p. 8, 9 MMG3010NT1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2008. All rights reserved. MMG3010NT1 Document Number: RF Device Data MMG3010NT1 Rev. 5, 3/2008 Freescale Semiconductor 15