MICROCHIP MCRF355

MCRF355/360
13.56 MHz Passive RFID Device with Anti-Collision Feature
Features
•
•
•
•
•
•
•
Carrier frequency: 13.56 MHz
Data modulation frequency: 70 kHz
Manchester coding protocol
154 bits of user memory
On-board 100 ms SLEEP timer
Built-in anti-collision algorithm for reading up to
multiple tags in the same RF field
“Cloaking” feature to minimize the detuning
effects of adjacent tags
Internal 100 pF resonant capacitor (MCRF360)
Read only device in RF field
Long read range
Rewritable with contact programmer or factoryprogrammed options
Very low power CMOS design
Die, wafer, bumped wafer, COB, PDIP or SOIC
package options
PDIP/SOIC
1
8
VDD
CLK
2
7
NC
Ant. A
3
6
Ant. B
NC
4
5
VSS
Note:
Pins 1, 2, 5 and 8 are for device testing
and contact programming.
Pins 3, 5 and 6 are for external antenna
connection.
NC = Not connected
MCRF355 COB
Application
5 mm
Book store and library book ID
Airline baggage tracking
Toys and gaming tools
Access control/asset tracking
Applications for reading multiple tags and long
read range
RF Carrier
Ant. A
8 mm
•
•
•
•
•
VPRG
Antenna Coil Connection
•
•
•
•
•
•
Package Type
MCRF355/360
Reader
Modulated
RF Data
Ant. B
Vss
Read range: ~ up to 1.5 meters depending on tag size
and system requirements.
Thickness = 0.4 mm
 2002 Microchip Technology Inc.
DS21287F-page 1
MCRF355/360
Description
The MCRF355 and MCRF360 are Microchip’s
13.56 MHz microID™ family of RFID tagging devices.
They are uniquely designed read-only passive Radio
Frequency Identification (RFID) devices with an
advanced anti-collision feature. They are programmable with a contact programmer. The device is powered
remotely by rectifying RF magnetic fields that are transmitted from the reader.
The device has a total of six pads (see Figure 1-1).
Three (ant. A, B, VSS) are used to connect the external
resonant circuit elements. The additional three pads
(VPRG, CLK, VDD) are used for programming and testing of the device.
The device needs an external resonant circuit between
antenna A, B, and VSS pads. The resonant frequency
of the circuit is determined by the circuit elements
between the antenna A and VSS pads. The resonant
circuit must be tuned to the carrier frequency of the
reader for maximum performance. The circuit element
between the antenna B and VSS pads is used for data
modulation. See Application Note AN707 for further
operational details.
The MCRF360 includes a 100 pF internal resonant
capacitor (100 pF). By utilizing this internal resonant
capacitor, the device needs external coils only for the
resonant circuit. Examples of the resonant circuit configuration for both the MCRF355 and MCRF360 are
shown in Section 3.0.
When a tag (device with the external LC resonant circuit) is brought to the reader’s RF field, it induces an RF
voltage across the LC resonant circuit. The device rectifies the RF voltage and develops a DC voltage. The
device becomes functional as soon as VDD reaches the
operating voltage level.
The occurrence of the cloaking and uncloaking of the
device is controlled by the modulation signal that turns
the modulation transistor on and off, resulting in communication from the device to the reader.
The data stream consists of 154 bits of Manchesterencoded data at a 70 kHz rate. The Manchester code
waveform is shown in Figure 2-2. After completion of
the data transmission, the device goes into SLEEP
mode for about 100 ms. The device repeats the transmitting and SLEEP cycles as long as it is energized.
During the SLEEP time the device remains in an
uncloaked state.
SLEEP time is determined by a built-in low-current
timer. There is a wide variation of the SLEEP time
between each device. This wide variation of SLEEP
time results in a randomness of the time slot. Each
device wakes up and transmits its data in a different
time slot with respect to each other. Based on this scenario, the reader is able to read many tags that are in
the same RF field.
The device has a total of 154 bits of reprogrammable
memory. All bits are reprogrammable by a contact programmer. A contact programmer (part number
PG103003) is available from Microchip Technology Inc.
Factory programming prior to shipment, known as
Serialized Quick Turn ProgrammingSM (SQTPSM), is
also available. The device is available in die, wafer,
bumped wafer, wafer-on-frame, PDIP, SOIC and COB
modules.
Note:
Information provided herein is preliminary
and subject to change without notice.
The device includes a modulation transistor that is
located between antenna B and VSS pads. The transistor has high turn-off (a few MΩ) and low turn-on (3 Ω)
resistance. The turn-on resistance is called modulation
resistance (RM). When the transistor turns off, the resonant circuit is tuned to the carrier frequency of the
reader. This condition is called uncloaking. When the
modulation transistor turns on, its low turn-on resistance shorts the external circuit element between the
antenna B and VSS. As a result, the resonant circuit no
longer resonates at the carrier frequency. This is called
cloaking.
The induced voltage amplitude (on the resonant circuit)
changes with the modulation data: higher amplitude
during uncloaking (tuned), and lower amplitude during
cloaking (detuned). This is called “amplitude modulation” signal. The receiver channel in the reader detects
this amplitude modulation signal and reconstructs the
modulation data.
DS21287F-page 2
 2002 Microchip Technology Inc.
MCRF355/360
1.0
ELECTRICAL CHARACTERISTICS
TABLE 1-1:
ABSOLUTE RATINGS
Parameters
Coil Current
Assembly temperature
Storage temperature
TABLE 1-2:
Symbol
Min
Max
Units
IPP_AC
TASM
TSTORE
Conditions
—
40
mA
Peak-to-Peak coil current
—
265
°C
< 10 sec
-65
150
°C
—
DC CHARACTERISTICS
All parameters apply
across the specified
operating ranges, unless
otherwise noted.
Commercial (C):
Parameters
TAMB = -20oC to 70oC
Symbol
Min
Typ
Max
Units
Reading voltage
VDDR
2.4
—
—
V
Conditions
VDD voltage for reading
Hysteresis voltage
VHYST
—
TBD
—
TBD
Operating current
IDDR
—
7
10
µA
VDD = 2.4V during reading at
25°C
Testing voltage
VDDT
—
4
—
V
—
Programming voltage:
High level input voltage
Low level input voltage
High voltage
VIH
VIL
VHH
0.7 * VDDT
—
—
—
—
20
—
0.3 * VDDT
—
V
V
V
External DC voltage for
programming and testing
Current leakage during
SLEEP time
IDD_OFF
—
10
—
nA
(Note 1)
Modulation resistance
RM
—
3
4
Ω
DC resistance between Drain and
Source gates of the modulation
transistor (when it is turned on)
RPDW
5
8
—
kΩ
CLK and VPRG internal pull-down
resistor
Pull-Down resistor
—
Note 1: This parameter is not tested in production.
 2002 Microchip Technology Inc.
DS21287F-page 3
MCRF355/360
TABLE 1-3:
AC CHARACTERISTICS
All parameters apply across Commercial (C): TAMB = -20oC to 70oC
the specified operating
ranges, unless otherwise
noted.
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Carrier frequency
FC
Modulation frequency
FM
58
70
82
kHz
Manchester coding, at VDD = 2.6 VDC
- 5 VDC
VPP_AC
4
—
—
VPP
Peak-to-Peak AC voltage across the
coil during reading
VCLMP_AC
—
32
—
VPP
Peak-to-Peak coil clamp voltage
Coil voltage during reading
Coil clamp voltage
13.56
MHz Reader’s transmitting frequency
Test mode clock frequency
FCLK
115
500
kHz
25°C
SLEEP time
TOFF
50
100
200
ms
Off time for anti-collision feature, at
25°C and VDD = 2.5 VDC
Internal resonant capacitor
(MCRF360)
CRES
85
100
115
pF
Internal resonant capacitor between
Antenna A and VSS, at 13.56 MHz
Write/Erase pulse width
Clock high time
TWC
—
2
10
ms
Time to program bit, at 25°C
THIGH
—
4.4
—
µs
25°C for testing and programming
TLOW
—
4.4
—
µs
25°C for testing and programming
STOP condition pulse width
TPW:STO
—
1000
—
ns
25°C for testing and programming
STOP condition setup time
TSU:STO
—
200
—
ns
25°C for testing and programming
Setup time for high voltage
TSU:HH
—
800
—
ns
25°C for testing and programming
High voltage delay time
TDL:HH
—
800
—
ns
Delay time before the next clock, at
25°C for testing and programming
Data input setup time
TSU:DAT
—
450
—
ns
25°C for testing and programming
Data input hold time
Clock low time
THD:DAT
—
1.2
—
µs
25°C for testing and programming
Output valid from clock
TAA
—
200
—
ns
25°C for testing and programming
Data retention
—
200
DS21287F-page 4
—
Years For T < 120°C
 2002 Microchip Technology Inc.
MCRF355/360
TABLE 1-4:
Pad Name
PAD COORDINATES (MICRONS)
Lower Lower
Left X Left Y
Upper
Right X
Passivation Openings
Upper
Right Y
Pad Width
Pad
Pad
Center X Center Y
Pad Height
Ant. A
-610.0
489.2
-521.0
578.2
89
89
-565.5
533.7
Ant. B
-605.0
-579.8
-516.0
-490.8
89
89
-560.5
-535.3
VSS
-605.0
-58.2
-516.0
30.8
89
89
-560.5
-13.7
VDD
463.4
-181.4
552.4
-92.4
89
89
507.9
-136.9
CLK
463.4
496.8
552.4
585.8
89
89
507.9
541.3
VPRG
463.4
157.6
552.4
246.6
89
89
507.9
202.1
Note 1: All coordinates are referenced from the center of the die. The minimum distance between pads (edge to
edge) is 10 mil.
2: Die Size = 1.417 mm x 1.513 mm = 1417 µm x 1513 µm = 55.79 mil x 59.57 mil
DIE LAYOUT
FIGURE 1-1:
Y (Notch edge of wafer)
1162.4
x
x
Ant A
CLK
250.2
x
X
250
x
432.6
Ant B
VPRG
x
1513
VSS
1158
x
767.2
458.4
VDD
1157.4
1417
Die size before saw:
Die size after saw:
1417 µm x 1513 µm
1353.8 µm x 1450.34 µm
89 µm x 89 µm
55.79 mil x 59.57 mil
53.3 x 57.1 mil
3.5 mil x 3.5 mil
 2002 Microchip Technology Inc.
Bond pad size:
DS21287F-page 5
MCRF355/360
TABLE 1-5:
PAD FUNCTION TABLE
Name
Ant. A
Function
Connected to external resonant circuit, (Note 1)
Ant. B
Connected to external resonant circuit, (Note 1)
VSS
Connected to external resonant circuit, (Note 1)
Device ground during Test mode
VDD
DC voltage supply for programming and Test mode
CLK
Main clock pulse for programming and Test mode
VPRG
Input/Output for programming and Test mode
Note 1: See Figure 3-1 for the connection with external resonant circuit.
TABLE 1-6:
DIE MECHANICAL DIMENSIONS
Specifications
Min.
Typ.
Max.
Unit
Wafer Diameter
—
8
—
inch
Comments
Die separation line width
—
80
—
µm
Dice per wafer
—
12,000
—
die
Batch size
—
24
—
wafer
Bond pad opening
—
—
3.5 x 3.5
89 x 89
—
—
mil
µm
(Note 1, Note 2)
7.5
190.5
8
203.2
8.5
215.9
mil
µm
Sawed 8” wafer on frame
(option = WF) (Note 3)
10
254
11
279.4
12
304.8
mil
µm
• Bumped, sawed 8” wafer
on frame (option = WFB)
• Unsawed wafer (option = W)
• Unsawed 8” bumped
wafer (option = WB), (Note 3)
Die passivation thickness (multilayer)
—
1.3
—
µm
(Note 4)
Die Size:
Die size X*Y before saw (step size)
Die size X*Y after saw
—
—
55.79 x 59.57
53.3 x 57.1
—
—
mil
mil
—
—
Die backgrind thickness
Note 1: The bond pad size is that of the passivation opening. The metal overlaps the bond pad passivation by at least 0.1 mil.
2: Metal Pad Composition is 98.5% Aluminum with 1% Si and 0.5% Cu.
3: As the die thickness decreases, susceptibility to cracking increases. It is recommended that the die be as thick as the
application will allow.
4: The Die Passivation thickness (1.3 µm) can vary by device depending on the mask set used.
- Layer 1: Oxide (undoped oxide)
- Layer 2: PSG (doped oxide)
- Layer 3: Oxynitride (top layer)
5: The conversion rate is 25.4 µm/mil.
Note:
Extreme care is urged in the handling and assembly of die products since they are susceptible to
mechanical and electrostatic damage.
DS21287F-page 6
 2002 Microchip Technology Inc.
MCRF355/360
2.0
FUNCTIONAL DESCRIPTION
2.1.3
The device contains three major sections: (1) Analog
Front-End, (2) Controller Logic and (3) Memory.
Figure 2-1 shows the block diagram of the device.
2.1
Analog Front-End Section
This section includes power supply, Power-on Reset,
and data modulation circuits.
2.1.1
POWER SUPPLY
The power supply circuit generates DC voltage (VDD)
by rectifying induced RF coil voltage. The power supply
circuit includes high-voltage clamping diodes to prevent excessive voltage development across the
antenna coil.
2.1.2
POWER-ON-RESET (POR)
This circuit generates a Power-on Reset when the tag
first enters the reader field. The RESET releases when
sufficient power has developed on the VDD regulator to
allow for correct operation.
DATA MODULATION
The data modulation circuit consists of a modulation
transistor and an external LC resonant circuit. The
external circuit must be tuned to the carrier frequency
of the reader (i.e., 13.56 MHz) for maximum performance.
The modulation transistor is placed between antenna B
and Vss pads and has small turn-on resistance (RM).
This small turn-on resistance shorts the external circuit
between the antenna B and Vss pads as it turns on.
The transistor turns on during the “Hi” period of the
modulation data and turns off during the “Lo” period.
When the transistor is turned off, the resonant circuit
resonates at the carrier frequency. Therefore, the
external circuit develops maximum voltage across it.
This condition is called uncloaking (tuned). When the
transistor is turned on, its low turn-on resistance shorts
the external circuit, and therefore the circuit no longer
resonates at the carrier frequency. The voltage across
the external circuit is minimized. This condition is called
cloaking (detuned).
The device transmits data by cloaking and uncloaking
based on the on/off condition of the modulation transistor. Therefore, with the 70 kHz - Manchester format, the
data bit “0” will be sent by cloaking (detuned) and
uncloaking (tuned) the device for 7 µs each. Similarly,
the data bit “1” will be sent by uncloaking (tuned) and
cloaking (detuned) the device for 7 µs each. See
Figure 2-2 for the Manchester waveform.
FIGURE 2-1:
BLOCK DIAGRAM
ANALOG FRONT-END SECTION
Power Supply
VDD
Power-on Reset
POR
CONTROLLER LOGIC SECTION
Column and Row Decoders
Clock Generator
Modulation Logic
Modulation
Modulation
Pulse
MEMORY SECTION
Address
CLK Pulse
Column Drivers
(High Voltage Circuit)
Data
SLEEP Timer
(anti-collision)
Wake-up Signal
Read/Write Logic
Set/Clear
154-Bit
Memory Array
Test Logic
VPRG and CLK
 2002 Microchip Technology Inc.
DS21287F-page 7
MCRF355/360
2.2
2.2.3
Controller Logic Section
2.2.1
This circuit generates a SLEEP time (100 ms ± 50%)
for the anti-collision feature. During this SLEEP time
(TOFF), the modulation transistor remains in a turnedon condition (cloaked) which detunes the LC resonant
circuit.
CLOCK PULSE GENERATOR
This circuit generates a clock pulse (CLK). The clock
pulse is generated by an on-board time-base oscillator.
The clock pulse is used for baud rate timing, data
modulation rate, etc.
2.2.2
2.2.4
MODULATION LOGIC
CODE WAVEFORMS
DESCRIPTION
WAVEFORM
SIGNAL
Data
READ/WRITE LOGIC
This logic controls the reading and programming of the
memory array.
This logic acts upon the serial data (154 bits) being
read from the memory array. The data is then encoded
into Manchester format. The encoded data is then fed
to the modulation transistor in the Analog Front-End
section. The Manchester code waveform is shown in
Figure 2-2.
FIGURE 2-2:
SLEEP TIMER
1
0
1
1
0
0
0
1
1
0
1
0
Digital Data
Internal Clock Signal
CLK
BIPHASE-L
(Manchester)
NRZ-L
(Reference only)
Biphase – Level (Split Phase)
A level change occurs at middle of
every bit clock period.
“1” is represented by a high to low
level change at midclock.
“0” is represented by a low to high
level change at midclock.
Non-Return to Zero – Level
“1” is represented by logic high level.
“0” is represented by logic low level.
Note: The CLK and NRZ-L signals are shown for reference only. BIPHASE-L (Manchester) is the device output.
DS21287F-page 8
 2002 Microchip Technology Inc.
MCRF355/360
3.0
RESONANT CIRCUIT
capacitor that is connected across the two inductors
form a parallel resonant circuit to pick up incoming RF
signals and also to send modulated signals to the
reader. The first coil (L1) is connected between
antenna A and B pads. The second coil (L2) is connected between antenna B and VSS pads. The capacitor is connected between antenna A and VSS pads.
The MCRF355 requires external coils and capacitor in
order to resonate at the carrier frequency of the reader.
About one-fourth of the turns of the coil should be
connected between antenna B and VSS; remaining
turns should be connected between antenna A and B
pads. The MCRF360 includes a 100 pF internal resonant capacitor. Therefore, the device needs only external coils for the resonant circuit. For example, the
device needs 1.377 µH of inductance for the carrier frequency = 13.56 MHz.
Figure 3-1(b) shows the resonant circuit formed by two
capacitors (C1 and C2) and one inductor.
Figure 3-1(c) shows a configuration of an external
circuit for the MCRF360. By utilizing the 100 pF internal
resonant capacitor, only L1 and L2 are needed for the
external circuit.
Figures 3-1 (a) and (b) show possible configurations of
the external circuits for the MCRF355. In Figure 3-1 (a),
two external antenna coils (L1 and L2) in series and a
FIGURE 3-1:
CONFIGURATION OF EXTERNAL RESONANT CIRCUITS
1
f 0 = -----------------------2π CL T
Ant. A
RF Carrier
Where:
Interrogator
C
L1
MCRF355
Ant. B
L2
Modulated
RF Data
LT
= L1 + L2 + 2LM
= Mutual inductance
between L1 and L2
LM
VSS
L1 > L2
(a)
Ant. A
RF Carrier
1
f 0 = -------------------------------------------C1C2
2π L  ----------------------
 C1 + C2
C1
L
Interrogator
MCRF355
Ant. B
C2
Modulated
RF Data
VSS
C1 ≥ C2
(b)
1
f 0 = ----------------------------------------------------------– 12
)
2π ( L T ) ( 100 x 10
Ant. A
RF Carrier
L1
100 pF
Interrogator
Ant. B
Modulated
RF Data
MCRF360
Where:
LT
L2
VSS
LM
= L1 + L2 + 2LM
= Mutual inductance
between L1 and L2
L1 > L2
(c)
 2002 Microchip Technology Inc.
DS21287F-page 9
MCRF355/360
4.0
DEVICE PROGRAMMING
3.
MCRF355/360 is a reprogrammable device in Contact
mode. The device has 154 bits of reprogrammable
memory. It can be programmed in the following procedure. (A programmer, part number PG103003, is also
available from Microchip).
4.
4.1
6.
5.
Programming Logic
Programming logic is enabled by applying power to the
device and clocking the device via the CLK pad while
loading the mode code via the VPRG pad (See
Examples 4-1 through 4-4 for test definitions). Both the
CLK and the VPRG pads have internal pull-down
resistors.
4.2
The above mode function (3.2.2) will be
executed when the last bit of code is entered.
Power the device off (VDD = VSS) to exit
Programming mode.
An alternative method to exit the Programming
mode is to bring CLK logic “High” before VPRG to
VHH (high voltage).
Any Programming mode can be entered after
exiting the current function.
4.4
Programming Mode
1.
Erase EE Code:
0111010100
2.
Program EE Code:
0111010010
3.
Read EE Code:
0111010110
Note:
Pin Configuration
‘0’ means logic “Low” (VIL) and ‘1’
means logic “High” (VIH).
Connect antenna A, B and VSS pads to ground.
4.3
1.
2.
4.5
Pin Timing
Examples 4-1 through 4-4 show the timing sequence
for programming and reading of the device.
Apply VDDT voltage to VDD. Leave VSS, CLK and
VPRG at ground.
Load mode code into the VPRG pad. The VPRG
is sampled at CLK low to high edge.
EXAMPLE 4-1:
Signal Timing
PROGRAMMING MODE 1: ERASE EE
CLK Number:
1
2
3
4
5
6
7
8
9
10
12
11
CLK
VHH
VPRG:
VIH
VIL
TWC
Note: Erases entire array to a ‘1’ state between CLK 11 and 12.
EXAMPLE 4-2:
PROGRAMMING MODE 2: PROGRAM EE
CLK Number:
1
2 … 5
6
7
8
9
10
11
…
165
CLK:
Pulse high to program bit to “0”
VHH…
VPRG:
VIL
VIH
Leave low to leave bit at “1”
TWC
TWC
Program bit #0 … Program bit #153
Note: Pulsing VPRG to VHH for the bit programming time while holding the CLK low programs the bit to a ‘0’.
DS21287F-page 10
 2002 Microchip Technology Inc.
MCRF355/360
EXAMPLE 4-3:
PROGRAMMING MODE 3: READ EE
CLK Number:
1
2
5
6
7
8
9
10
11
12
165
CLK:
VPRG:
VIH…
VIL
Turn off programmer drive during
CLK high so MCRF355 can drive
VPRG.
EXAMPLE 4-4:
bit #0 bit #1
data data
...
bit #153
data
TIMING DATA
THIGH
TLOW
CLK:
TPW:STO
THD:DAT
VHH
VPRG:
VIH
VIL
TAA
TSU:STO
TSU:DAT
TWC
VHH
VPRG:
(Reading)
VIH…
TSU:HH
TDL:HH
VIL
 2002 Microchip Technology Inc.
DS21287F-page 11
MCRF355/360
5.0
FAILED DIE IDENTIFICATION
Every die on the wafer is electrically tested according
to the data sheet specifications and visually inspected
to detect any mechanical damage, such as mechanical
cracks and scratches.
Any failed die in the test or visual inspection is identified
by black colored ink. Therefore, any die covered with
black ink should not be used.
The ink dot specification:
• Ink dot size: 254 µm in circular diameter
• Position: central third of die
• Color: black
6.0
WAFER DELIVERY
DOCUMENTATION
The wafer is shipped with the following information:
•
•
•
•
•
•
Microchip Technology Inc. MP Code
Lot Number
Total number of wafers in the container
Total number of good dice in the container
Average die per wafer (DPW)
Scribe number of wafers with number of good
dice
7.0
The device is very susceptible to Electro-Static Discharge (ESD), which can cause a critical damage to the
device. Special attention is needed during the handling
process.
Any ultraviolet (UV) light can erase the memory cell
contents of an unpackaged device. Fluorescent lights
and sunlight can also erase the memory cell, although
it takes more time than UV lamps. Therefore, keep any
unpackaged device out of UV light and also avoid direct
exposure of strong fluorescent lights and shining
sunlight.
Certain IC manufacturing, COB and tag assembly
operations may use UV light. Operations such as backgrind de-tape, certain cleaning procedures, epoxy or
glue cure should be done without exposing the die
surface to UV light.
Using X-ray for die inspection will not harm the die, nor
erase memory cell contents.
8.0
REFERENCES
It is recommended that the reader reference the
following documents.
1.
2.
3.
4.
5.
DS21287F-page 12
NOTICE ON DIE AND WAFER
HANDLING
“Antenna Circuit Design for RFID Applications”,
AN710, DS00710.
“RFID Tag and COB Development Guide with
Microchip’s RFID Devices”, AN830, DS00830.
“MCRF355/360 Application Note: Mode of
Operation and External Resonance Circuit”,
AN707, DS00707.
“Microchip Development Kit Sample Format for
the MCRF355/360 Devices”, TB031, DS91031.
“MCRF355/360 Reader Reference Design”,
DS21311.
 2002 Microchip Technology Inc.
MCRF355/360
PACKAGING INFORMATION
8.1
Package Marking Information
8-Lead PDIP (300 mil)
MCRF355
XXXXXNNN
0025
XXXXXXXX
XXXXXNNN
YYWW
8-Lead SOIC (150 mil)
XXXXXXXX
XXXXYYWW
NNN
Legend:
Note:
*
XX...X
Y
YY
WW
NNN
Example:
Example:
MCRF355
XXX0025
NNN
Customer specific information*
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
Standard device marking consists of Microchip part number, year code, week code, and traceability
code.
 2002 Microchip Technology Inc.
DS21287F-page 13
MCRF355/360
MCRF355 COB
Detail X
4.23
5.00
1.06
X
∅2.00
R0.20
R1.30
31.84
Y
0.80(2X)
35.00
9.65
0.60(4X)
5.10
6.88
6.27
5.21
1.42
9.65
9.65
0.40 (max.)
R0.16 (2X)
0.60(2X)
1.58
1.42
1.50
9.50
1.85
9.50
0.40
8.00
1.53(4X)
9.50
4.75
9.65
9.65
4.90
5.90
0.30 (ref.)
2.52
3.75
Note 2
R0.20(4X)
DS21287F-page 14
1.94
5.60
4.75
3.88
Note:
1. Reject hole by device testing
2. Top gate mark (Option)
3. Total package thickness excludes
punching burr
2.375
 2002 Microchip Technology Inc.
MCRF355/360
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
n
1
α
E
A2
A
L
c
A1
β
B1
p
eB
UNITS
DIMENSION LIMITS
Number of Pins
Pitch
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
§
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
B
MIN
n
p
A
A2
A1
E
E1
D
L
c
B1
B
eB
α
β
.140
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
5
INCHES*
NOM
8
.100
.155
.130
.313
.250
.373
.130
.012
.058
.018
.370
10
10
MAX
.170
.145
.325
.260
.385
.135
.015
.070
.022
.430
15
15
MILLIMETERS
NOM
8
2.54
3.56
3.94
2.92
3.30
0.38
7.62
7.94
6.10
6.35
9.14
9.46
3.18
3.30
0.20
0.29
1.14
1.46
0.36
0.46
7.87
9.40
10
5
10
5
MIN
MAX
4.32
3.68
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
 2002 Microchip Technology Inc.
DS21287F-page 15
MCRF355/360
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
n
1
h
45°
α
c
A2
A
φ
β
UNITS
DIMENSION LIMITS
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
L
MIN
n
p
A
A2
A1
E
E1
D
h
L
φ
c
B
α
β
.053
.052
.004
.228
.146
.189
.010
.019
0
.008
.013
0
0
A1
INCHES*
NOM
8
.050
.061
.056
.007
.237
.154
.193
.015
.025
4
.009
.017
12
12
MAX
.069
.061
.010
.244
.157
.197
.020
.030
8
.010
.020
15
15
MILLIMETERS
NOM
8
1.27
1.35
1.55
1.32
1.42
.10
.18
5.79
6.02
3.71
3.91
4.80
4.90
.25
.38
.48
.62
0
4
.20
.23
.33
.42
0
12
0
12
MIN
MAX
1.75
1.55
.25
6.20
3.99
5.00
.51
.76
8
.25
.51
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
DS21287F-page 16
 2002 Microchip Technology Inc.
MCRF355/360
ON-LINE SUPPORT
Microchip provides on-line support on the Microchip
World Wide Web site.
The web site is used by Microchip as a means to make
files and information easily available to customers. To
view the site, the user must have access to the Internet
and a web browser, such as Netscape® or Microsoft®
Internet Explorer. Files are also available for FTP
download from our FTP site.
Connecting to the Microchip Internet Web Site
SYSTEMS INFORMATION AND
UPGRADE HOT LINE
The Systems Information and Upgrade Line provides
system users a listing of the latest versions of all of
Microchip's development systems software products.
Plus, this line provides information on how customers
can receive the most current upgrade kits.The Hot Line
Numbers are:
1-800-755-2345 for U.S. and most of Canada, and
1-480-792-7302 for the rest of the world.
The Microchip web site is available at the following
URL:
www.microchip.com
092002
The file transfer site is available by using an FTP service to connect to:
ftp://ftp.microchip.com
The web site and file transfer site provide a variety of
services. Users may download files for the latest
Development Tools, Data Sheets, Application Notes,
User's Guides, Articles and Sample Programs. A variety of Microchip specific business information is also
available, including listings of Microchip sales offices,
distributors and factory representatives. Other data
available for consideration is:
• Latest Microchip Press Releases
• Technical Support Section with Frequently Asked
Questions
• Design Tips
• Device Errata
• Job Postings
• Microchip Consultant Program Member Listing
• Links to other useful web sites related to
Microchip Products
• Conferences for products, Development Systems,
technical information and more
• Listing of seminars and events
 2002 Microchip Technology Inc.
DS21287F-page 17
MCRF355/360
READER RESPONSE
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation
can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.
Please list the following information, and use this outline to provide us with your comments about this document.
To:
Technical Publications Manager
RE:
Reader Response
Total Pages Sent ________
From: Name
Company
Address
City / State / ZIP / Country
Telephone: (_______) _________ - _________
FAX: (______) _________ - _________
Application (optional):
Would you like a reply?
Device: MCRF355/360
Y
N
Literature Number: DS21287F
Questions:
1. What are the best features of this document?
2. How does this document meet your hardware and software development needs?
3. Do you find the organization of this document easy to follow? If not, why?
4. What additions to the document do you think would enhance the structure and subject?
5. What deletions from the document could be made without affecting the overall usefulness?
6. Is there any incorrect or misleading information (what and where)?
7. How would you improve this document?
DS21287F-page 18
 2002 Microchip Technology Inc.
MCRF355/360
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X
Device
Device:
Package
MCRF355
MCRF355/6C
= 13.56 MHz Anti-Collision device.
= MCRF355 Cross Technology World II
COB module with dual 68 pF
capacitors
MCRF355/7M = MCRF355 IST I0A2 COB module with
dual 68 pF capacitors
MCRF355/7M: = MCRF355 COB module with dual
68 pF capacitors.
MCRF360
= 13.56 MHz Anti-Collision device with
100 pF on-chip resonance capacitor.
Temperature Range:
Package:
Temperature
Range
/XXX
=
Examples:
a)
MCRF355/W:
b)
MCRF355/WF: = 8-mil wafer on frame.
= 11-mil wafer.
c)
MCRF355/P:
a)
MCRF360/WFB:= Bumped 8-mil wafer on
frame
b)
MCRF360/SB: = Bumped 8-mil die.
c)
MCRF360/SN: = SOIC package.
= PDIP package.
-20°C to +70°C
W
WB
WF
WFB
=
=
=
=
P
S
SB
SN
=
=
=
=
Wafer (11 mil backgrind)
Bumped wafer (8 mil backgrind)
Sawed wafer on frame (8 mil backgrind)
Bumped, sawed wafer on frame
(8 mil backgrind)
Plastic PDIP (300 mil Body) 8-lead
Dice in waffle pack (8 mil)
Bumped die in waffle pack (8 mil)
Plastic SOIC (150 mil Body) 8-lead
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2002 Microchip Technology Inc.
DS21287F-page 19
MCRF355/360
NOTES:
DS21287F-page 20
 2002 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, KEELOQ,
MPLAB, PIC, PICmicro, PICSTART and PRO MATE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL
and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense,
FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP,
ICEPIC, microPort, Migratable Memory, MPASM, MPLIB,
MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
 2002 Microchip Technology Inc.
DS21287F - page 21
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
Japan
Corporate Office
Australia
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Microchip Technology Japan K.K.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Rocky Mountain
China - Beijing
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-4338
Atlanta
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770-640-0034 Fax: 770-640-0307
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Chicago
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071 Fax: 630-285-0075
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423 Fax: 972-818-2924
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Kokomo
2767 S. Albright Road
Kokomo, Indiana 46902
Tel: 765-864-8360 Fax: 765-864-8387
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
China - Chengdu
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-86766200 Fax: 86-28-86766599
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-82350361 Fax: 86-755-82366086
China - Hong Kong SAR
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
India
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology (Barbados) Inc.,
Taiwan Branch
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Austria
Microchip Technology Austria GmbH
Durisolstrasse 2
A-4600 Wels
Austria
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Steinheilstrasse 10
D-85737 Ismaning, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
10/18/02
DS21287F-page 22
 2002 Microchip Technology Inc.
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.