FGA20S120M tm 1200V, 20A Shorted-Anode IGBT Features General Description • High speed switching Using advanced Field Stop Trench and shorted-anode technology, Fairchild’s 1200V Shorted-Anode Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This device is designed for Induction heating Microvewave Oven. • Low saturation voltage: VCE(sat) =1.55V @ IC = 20A • High input impedance • RoHS compliant Applications • Induction heating and Microvewave Oven • Soft switching Application C G TO-3PN E G C E Absolute Maximum Ratings T Symbol VCES VGES IC C = 25°C unless otherwise noted Description Collector to Emitter Voltage Gate to Emitter Voltage Ratings Units 1200 V ±25 V Collector Current @ TC = 25oC 40 A Collector Current @ TC = 100oC 20 A 60 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current @ TC = 25oC 40 A IF Diode Continuous Forward Current @ TC = 100oC 20 A 348 W PD TJ Maximum Power Dissipation Maximum Power Dissipation o @ TC = 25 C @ TC = 100oC 174 Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +175 o -55 to +175 o C C oC 300 Thermal Characteristics Symbol RθJC(IGBT) Parameter Thermal Resistance, Junction to Case Typ. Max. -- 0.43 o o RθJC(Diode) Thermal Resistance, Junction to Case -- 0.43 RθJA Thermal Resistance, Junction to Ambient -- 40 Units C/W C/W oC/W Notes: 1: Limited by Tjmax ©2010 Fairchild Semiconductor Corporation FGA20S120M Rev. A 1 www.fairchildsemi.com FGA20S120M 1200V, 20A Shorted-Anode IGBT March 2010 Device Marking Device Package Reel Size Tape Width Quantity FGA20S120M FGA20S120M TO-3PN - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 1200 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 2mA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA IC = 20mA, VCE = VGE On Characteristics VGE(th) VCE(sat) VFM G-E Threshold Voltage Collector to Emitter Saturation Voltage Diode Forward Voltage 4.5 6.0 7.5 V IC = 20A, VGE = 15V - 1.55 1.85 V IC = 20A, VGE = 15V, TC = 125oC - 1.75 - V IC = 20A, VGE = 15V, TC = 175oC - 1.85 - V IF = 20A, TC = 25oC -- 1.7 2.2 IF = 20A, TC = 175oC -- 2.1 - -- 2680 -- pF -- 53 -- pF -- 43 -- pF V V Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characcteristics td(on) Turn-On Delay Time - 43 - ns tr Rise Time - 176 - ns td(off) Turn-Off Delay Time tf Fall Time - 310 - ns - 320 480 ns Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 0.52 - mJ - 1.43 2.145 mJ Ets td(on) Total Switching Loss - 1.95 - mJ Turn-On Delay Time - 41 - ns VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC tr Rise Time - 260 - ns td(off) Turn-Off Delay Time - 345 - ns tf Fall Time - 520 - ns Eon Turn-On Switching Loss - 0.78 - mJ Eoff Turn-Off Switching Loss - 1.97 - mJ Ets Total Switching Loss - 2.75 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGA20S120M Rev. A VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 175oC VCE = 600V, IC = 20A, VGE = 15V 2 - 210 - nC - 18 - nC - 119 - nC www.fairchildsemi.com FGA20S120M 1200V, 20A Shorted-Anode IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 140 140 o TC = 25 C 20V o 17V TC = 175 C 15V 100 80 12V 60 10V 40 VGE = 6V 7V 20 20V 17V 120 Collector Current, IC [A] 120 Collector Current, IC [A] Figure 2. Typical Output Characteristics 15V 100 80 12V 60 40 9V 10V VGE = 6V 20 7V 8V 0 0.0 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] 0 0.0 9.0 Figure 3. Typical Saturation Voltage Characteristics 9.0 140 Common Emitter Common Emitter VGE = 15V 120 120 VCE = 20V o TC = 25 C o Collector Current, IC [A] TC = 25 C Collector Current, IC [A] 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 140 o 100 TC = 175 C o 100 TC = 175 C 80 60 40 80 60 40 20 20 0 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3 6 9 12 Gate-Emitter Voltage,VGE [V] 3.0 20 Common Emitter VGE = 15V 40A 2.5 15 Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 9V 8V 2.0 20A 1.5 10A Common Emitter o TC = 25 C 16 12 8 20A 4 40A IC = 10A 1.0 25 50 FGA20S120M Rev. A 75 100 125 150 o Case Temperature, TC [ C] 0 175 3 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA20S120M 1200V, 20A Shorted-Anode IGBT Typical Performance Characteristics Figure 7. Saturtio Voltage vs. VGE Figure 8. Capacitance Characteristics 6000 20 Common Emitter Common Emitter VGE = 0V, f = 1MHz Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 175 C 12 8 20A o TC = 25 C 4000 Coes 2000 Cres 40A 4 IC = 10A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 1 20 Figure 9. Gate Charge Characteristics 10 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteristics 100 15 Common Emitter 10µs VCC = 200V 600V Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o TC = 25 C 12 400V 9 6 10 100µs 1 10 ms 1ms DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 3 0.01 0 0 30 60 90 120 150 Gate Charge, Qg [nC] 180 1 210 Figure 11. Turn-On Characteristics vs. Gate resistance 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] Figure 12. Turn-Off Characteristics vs. Gate resistance 3000 200 td(off) 1000 Switching Time [ns] Switching Time [ns] tr 100 td(on) Common Emitter VCC = 600V, VGE = 15V IC = 20A tf Common Emitter VCC = 600V, VGE = 15V IC = 20A 100 o TC = 25 C o TC = 25 C o o TC = 175 C TC = 175 C 10 0 10 FGA20S120M Rev. A 20 30 40 50 Gate Resistance, RG [Ω ] 60 0 70 10 20 30 40 50 60 70 Gate Resistance, RG [Ω] 4 www.fairchildsemi.com FGA20S120M 1200V, 20A Shorted-Anode IGBT Typical Performance Characteristics Figure 13. Turn-On Characteristics vs. Collector Current 3000 1000 Figure 14. Turn-off Characteristics vs. Collector Current 1000 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VGE = 15V, RG = 10Ω 800 o o TC = 25 C TC = 25 C o o tr Switching Time [ns] Switching Time [ns] TC = 175 C 100 td(on) 10 10 20 30 40 TC = 175 C 600 400 tf td(off) 200 10 50 20 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate resistance 50 5000 Eoff Eoff Switching Loss [µJ] 1000 Eon Common Emitter VCC = 600V, VGE = 15V IC = 20A 1000 Eon Common Emitter VGE = 15V, RG = 10W o TC = 25 C o TC = 175 C o TC = 25 C o TC = 175 C 100 40 Figure 16. Switching Loss vs. Collector Current 5000 Switching Loss [µJ] 30 Collector Current, IC [A] 0 10 20 30 40 50 Gate Resistance, RG [Ω] 60 100 10 70 Figure 17. Turn-Off Switching SOA Characteristics Collector Currrent 20 30 40 Collector Current, IC [A] 50 Figure 18. Forward Characteristics 100 30 Forward Current, IF [A] Collector Current, IC [A] 10 10 o TJ = 25 C o TJ = 175 C 1 o TC = 25 C Safe Operating Area o o VGE = 15V, TC = 175 C 1 1 10 TC = 175 C 100 0.1 0.0 1000 Collector-Emitter Voltage, VCE [V] FGA20S120M Rev. A 5 0.5 1.0 1.5 Forward Voltage, VF [V] 2.0 www.fairchildsemi.com FGA20S120M 1200V, 20A Shorted-Anode IGBT Typical Performance Characteristics FGA20S120M 1200V, 20A Shorted-Anode IGBT Figure 19. Transient Thermal Impedeance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.3 0.1 0.05 0.02 0.01 PDM 0.01 t1 single pulse t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGA20S120M Rev. A 6 www.fairchildsemi.com FGA20S120M 1200V, 20A Shorted-Anode IGBT Mechanical Dimensions TO-3PN Dimensions in Millimeters FGA20S120M Rev. A 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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